Patent classifications
G03F1/64
Pellicle Film for Photolithography and Pellicle Provided with the Same
A pellicle film for photolithography, characterized by including a main layer, and graphene provided on one or both sides of the main layer, in which the pellicle film is stretched on one end face of a pellicle frame; and a pellicle for photolithography, including a pellicle film, and a pellicle frame, in which the pellicle film is arranged on an upper end face of the pellicle frame with an adhesive agent or a pressure-sensitive adhesive agent interposed therebetween, and characterized in that the pellicle film has a main layer, and graphene provided on one or both sides of the main layer.
Pellicle for photomask, reticle including the same, and exposure apparatus for lithography
A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane and a passivation member. The pellicle membrane may include a carbon-based material having defects. The passivation member may cover the defects of the carbon-based material. The passivation member may include an inorganic material. The passivation member may be disposed on one or two surfaces of the pellicle membrane. The pellicle for the photomask may be applied to extreme ultraviolet (EUV) lithography.
Pellicle for photomask, reticle including the same, and exposure apparatus for lithography
A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane and a passivation member. The pellicle membrane may include a carbon-based material having defects. The passivation member may cover the defects of the carbon-based material. The passivation member may include an inorganic material. The passivation member may be disposed on one or two surfaces of the pellicle membrane. The pellicle for the photomask may be applied to extreme ultraviolet (EUV) lithography.
ATTACHMENT FEATURE REMOVAL FROM PHOTOMASK IN EXTREME ULTRAVIOLET LITHOGRAPHY APPLICATION
Embodiments of the present disclosure generally provide apparatus and methods for removing an attachment feature utilized to hold a pellicle from a photomask. In one embodiment, an attachment feature removal apparatus for processing a photomask includes an attachment feature puller comprising an actuator, a clamp coupled to the actuator, the clamp adapted to grip an attachment feature, and a coil assembly disposed adjacent to the attachment feature.
PELLICLE STRUCTURE FOR LITHOGRAPHY MASK
A lithography patterning system includes a reticle having patterned features, a pellicle having a plurality of openings, a radiation source configured for emitting radiation to reflect and/or project the patterned features, and one or more mirrors configured for guiding reflected and/or projected patterned features onto a wafer. The pellicle is configured to protect the reticle against particles and floating contaminants. The plurality of openings include between 5% and 99.9% of lateral surface area of the pellicle. The pellicle can be attached to the reticle on a side of the patterned features, placed beside an optical path between the radiation source and the wafer, or placed in an optical path between mirrors and the radiation source. The plurality of openings in the pellicle are formed by a plurality of bar shaped materials, or formed in a honey comb structure or a mesh structure.
PELLICLE STRUCTURE FOR LITHOGRAPHY MASK
A lithography patterning system includes a reticle having patterned features, a pellicle having a plurality of openings, a radiation source configured for emitting radiation to reflect and/or project the patterned features, and one or more mirrors configured for guiding reflected and/or projected patterned features onto a wafer. The pellicle is configured to protect the reticle against particles and floating contaminants. The plurality of openings include between 5% and 99.9% of lateral surface area of the pellicle. The pellicle can be attached to the reticle on a side of the patterned features, placed beside an optical path between the radiation source and the wafer, or placed in an optical path between mirrors and the radiation source. The plurality of openings in the pellicle are formed by a plurality of bar shaped materials, or formed in a honey comb structure or a mesh structure.
PELLICLE HOLDER, PELLICLE INSPECTION APPARATUS, AND PELLICLE INSPECTION METHOD
Provided is a pellicle holder. The pellicle holder includes: an outer frame formed therein with a pellicle seating space; and a plurality of holding legs extending in a direction from the outer frame toward a center of the pellicle seating space, wherein the holding leg is extended or contracted in the extension direction and has one end on which a portion of a pellicle is mounted to support the pellicle.
PELLICLE HOLDER, PELLICLE INSPECTION APPARATUS, AND PELLICLE INSPECTION METHOD
Provided is a pellicle holder. The pellicle holder includes: an outer frame formed therein with a pellicle seating space; and a plurality of holding legs extending in a direction from the outer frame toward a center of the pellicle seating space, wherein the holding leg is extended or contracted in the extension direction and has one end on which a portion of a pellicle is mounted to support the pellicle.
PELLICLE AND METHOD FOR PRODUCING THE SAME
The present invention is to provide a pellicle characterized by including a pellicle film and a pellicle frame, in which the pellicle film is stretched on the pellicle frame, and the pellicle film is an annealed pellicle film, and to provide a method for producing a pellicle by stretching a pellicle film on a pellicle frame, including the step of annealing the pellicle film alone before stretching the pellicle film on the pellicle frame, annealing the pellicle after stretching the pellicle film on the pellicle frame, or annealing the pellicle film alone and the pellicle both before and after stretching the pellicle film on the pellicle frame.
PELLICLE
A pellicle characterized by having an amount of released aqueous gas of 110.sup.3 Pa.Math.L/s or less per pellicle, an amount of released hydrocarbon-based gas of 110.sup.5 Pa.Math.L/s or less per pellicle in a range of measured mass number of 45 to 100 amu, and an amount of released hydrocarbon-based gas of 410.sup.7 Pa.Math.L/s or less per pellicle in a range of measured mass number of 101 to 200 amu, under vacuum after the pellicle has been left to stand for 10 minutes in an atmosphere of 23 C. and 110.sup.3 Pa or less.