A pellicle characterized by having an amount of released aqueous gas of 110.sup.3 Pa.Math.L/s or less per pellicle, an amount of released hydrocarbon-based gas of 110.sup.5 Pa.Math.L/s or less per pellicle in a range of measured mass number of 45 to 100 amu, and an amount of released hydrocarbon-based gas of 410.sup.7 Pa.Math.L/s or less per pellicle in a range of measured mass number of 101 to 200 amu, under vacuum after the pellicle has been left to stand for 10 minutes in an atmosphere of 23 C. and 110.sup.3 Pa or less.

A pellicle includes a frame. The frame includes a check valve, wherein the check valve is configured to permit gas flow from an interior of the pellicle to an exterior of the pellicle. The frame further includes a recess in a bottom surface of the frame. The pellicle further includes a membrane extending across the frame. The pellicle further includes a gasket configured to fit within the recess.

A pellicle includes a frame. The frame includes a check valve, wherein the check valve is configured to permit gas flow from an interior of the pellicle to an exterior of the pellicle. The frame further includes a recess in a bottom surface of the frame. The pellicle further includes a membrane extending across the frame. The pellicle further includes a gasket configured to fit within the recess.

A pellicle and a method for manufacturing a pellicle that can improve the production yield ratio are provided. A method for manufacturing a pellicle comprises a step to prepare a supporting member containing Si, and a step to form a pellicle film on a top surface of the supporting member. The step to form the pellicle film includes: a step to form a SiC film with a first average carbon concentration on the top surface of the supporting member by carbonizing Si, and a step to form a SiC film with a second average carbon concentration different from the first average carbon concentration on the top surface of the SiC film. The method for manufacturing a pellicle further comprises a step to exposes at least a part of the reverse side of the SiC film by wet etching.

A pellicle and a method for manufacturing a pellicle that can improve the production yield ratio are provided. A method for manufacturing a pellicle comprises a step to prepare a supporting member containing Si, and a step to form a pellicle film on a top surface of the supporting member. The step to form the pellicle film includes: a step to form a SiC film with a first average carbon concentration on the top surface of the supporting member by carbonizing Si, and a step to form a SiC film with a second average carbon concentration different from the first average carbon concentration on the top surface of the SiC film. The method for manufacturing a pellicle further comprises a step to exposes at least a part of the reverse side of the SiC film by wet etching.

A mask and a fabrication method thereof are provided. The mask includes: a frame, which includes a hollow portion and a border surrounding the hollow portion; an opening plate, which is provided on the frame and includes an opening and a body surrounding the opening, the opening corresponding to the hollow portion, and the body being connected with the border; and a pattern plate, which is provided on the opening plate and includes a pattern portion and a non-pattern portion positioned in a periphery of the pattern portion, the pattern portion corresponding to the opening, the non-pattern portion being connected with the body of the opening plate, and the non-pattern portion and the frame being separated from each other at a position of the border.

A mask and a fabrication method thereof are provided. The mask includes: a frame, which includes a hollow portion and a border surrounding the hollow portion; an opening plate, which is provided on the frame and includes an opening and a body surrounding the opening, the opening corresponding to the hollow portion, and the body being connected with the border; and a pattern plate, which is provided on the opening plate and includes a pattern portion and a non-pattern portion positioned in a periphery of the pattern portion, the pattern portion corresponding to the opening, the non-pattern portion being connected with the body of the opening plate, and the non-pattern portion and the frame being separated from each other at a position of the border.

A pellicle for extreme ultraviolet lithography and a method of manufacturing the pellicle for extreme ultraviolet lithography are provided. The pellicle for extreme ultraviolet lithography includes a pellicle layer having a specific (or, alternatively, predetermined) thickness, a frame on an edge area of the pellicle layer and supporting the pellicle layer, and a boron implantation layer located between the pellicle layer and the frame. The boron implantation layer is spaced by a specific (or, alternatively, predetermined) distance inward from an outer periphery of the pellicle layer.

A pellicle for extreme ultraviolet lithography and a method of manufacturing the pellicle for extreme ultraviolet lithography are provided. The pellicle for extreme ultraviolet lithography includes a pellicle layer having a specific (or, alternatively, predetermined) thickness, a frame on an edge area of the pellicle layer and supporting the pellicle layer, and a boron implantation layer located between the pellicle layer and the frame. The boron implantation layer is spaced by a specific (or, alternatively, predetermined) distance inward from an outer periphery of the pellicle layer.

The present disclosure provides an apparatus for a semiconductor lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a porous pellicle frame, a mask with a patterned surface, a first thermal conductive adhesive layer that secures the pellicle membrane to the porous pellicle frame, and a second thermal conductive adhesive layer that secures the porous pellicle frame to the mask.