A lithographic apparatus comprising a support structure constructed to support a patterning device and associated pellicle, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, and a projection system configured to project the patterned radiation beam onto a target portion of a substrate, wherein the support structure is located in a housing and wherein pressure sensors are located in the housing.

A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane, and the pellicle membrane may include nanocrystalline graphene. The nanocrystalline graphene may have defects. The nanocrystalline graphene may include a plurality of nanoscale crystal grains, and the nanoscale crystal grains may include a two-dimensional (2D) carbon structure having an aromatic ring structure. The defects of the nanocrystalline graphene may include at least one of an sp3 carbon atom, an oxygen atom, a nitrogen atom, or a carbon vacancy.

A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane, and the pellicle membrane may include nanocrystalline graphene. The nanocrystalline graphene may have defects. The nanocrystalline graphene may include a plurality of nanoscale crystal grains, and the nanoscale crystal grains may include a two-dimensional (2D) carbon structure having an aromatic ring structure. The defects of the nanocrystalline graphene may include at least one of an sp3 carbon atom, an oxygen atom, a nitrogen atom, or a carbon vacancy.

The purpose of the present invention is to provide: a pellicle frame which is not susceptible to deterioration even if irradiated with short-wavelength light such as excimer light, and which is not susceptible to generation of an outgas or foreign substance; and a pellicle which uses this pellicle frame. In order to achieve the above-described purpose, this pellicle frame for supporting the outer periphery of a pellicle film is configured to comprise a frame and a film that is formed on the surface of the frame and contains a polyimide resin.

The purpose of the present invention is to provide: a pellicle frame which is not susceptible to deterioration even if irradiated with short-wavelength light such as excimer light, and which is not susceptible to generation of an outgas or foreign substance; and a pellicle which uses this pellicle frame. In order to achieve the above-described purpose, this pellicle frame for supporting the outer periphery of a pellicle film is configured to comprise a frame and a film that is formed on the surface of the frame and contains a polyimide resin.

Tooling for a mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.

Tooling for a mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.

An exposure apparatus for transferring a pattern from a reticle to a workpiece, a pellicle being positioned near the reticle, includes a heat transfer frame, an illuminator, and a temperature controller. The heat transfer frame is configured to be positioned near the pellicle, the heat transfer frame defining a beam aperture. The illuminator directs a beam through the beam aperture and the pellicle at the reticle. The temperature controller controls the temperature of the heat transfer frame to control the temperature of the pellicle. The illuminator can direct the beam from a beam source, such as an EUV beam source. Additionally, the temperature controller can cryogenically cool the heat transfer frame.

An exposure apparatus for transferring a pattern from a reticle to a workpiece, a pellicle being positioned near the reticle, includes a heat transfer frame, an illuminator, and a temperature controller. The heat transfer frame is configured to be positioned near the pellicle, the heat transfer frame defining a beam aperture. The illuminator directs a beam through the beam aperture and the pellicle at the reticle. The temperature controller controls the temperature of the heat transfer frame to control the temperature of the pellicle. The illuminator can direct the beam from a beam source, such as an EUV beam source. Additionally, the temperature controller can cryogenically cool the heat transfer frame.

The present disclosure provides a mask for photolithography patterning. The mask includes a substrate, a pattern layer on a surface of the substrate. The mask also includes a pellicle attached to the substrate and configured to isolate the pattern layer from ambient. The pellicle includes a membrane between the pattern layer and ambient, and an optical member disposed in the membrane. A method for manufacturing the mask is also provided.