A mask cover (10) and a mask are provided. The mask cover (10) comprises a bracket (11) and at least one adjusting unit (12), each adjusting unit (12) includes a shielding plate (121) and a driving component (122), the bracket (11) has an opening portion (111), and at least a portion of the opening portion (111) corresponds to the adjusting unit (12). The shielding plate (121) has a first end and a second end, the second end is fixed on the bracket (11), and the first end is an end opposite to the second end. The shielding plate (121) in an initial state is provided on a side of the opening portion (111). The driving component (122) is installed on the bracket (11) and is connected with the first end of the shielding plate (121), the driving component (122) is configured to drive the first end of the shielding plate (121) to move in the first direction (A), so that at least a portion of the shielding plate (121) is released from the side of the opening portion (111), to adjust a size of a portion of the opening portion (111) covered by the shielding plate (121) along the first direction (A), and the first direction (A) is a direction from the second end to the first end of the shielding plate (121).

A mask cover (10) and a mask are provided. The mask cover (10) comprises a bracket (11) and at least one adjusting unit (12), each adjusting unit (12) includes a shielding plate (121) and a driving component (122), the bracket (11) has an opening portion (111), and at least a portion of the opening portion (111) corresponds to the adjusting unit (12). The shielding plate (121) has a first end and a second end, the second end is fixed on the bracket (11), and the first end is an end opposite to the second end. The shielding plate (121) in an initial state is provided on a side of the opening portion (111). The driving component (122) is installed on the bracket (11) and is connected with the first end of the shielding plate (121), the driving component (122) is configured to drive the first end of the shielding plate (121) to move in the first direction (A), so that at least a portion of the shielding plate (121) is released from the side of the opening portion (111), to adjust a size of a portion of the opening portion (111) covered by the shielding plate (121) along the first direction (A), and the first direction (A) is a direction from the second end to the first end of the shielding plate (121).

An optical mask has a first pellicle attached. The optical mask is inspected with the first pellicle in place using first wavelengths of electromagnetic radiation. The first pellicle is replaced with a second pellicle. The first pellicle only allows the first wavelengths of electromagnetic radiation to pass, and the second pellicle allows second wavelengths that are shorter than the first wavelengths to pass. A photoresist is exposed using the optical mask with the second pellicle in place. The second pellicle is replaced with the first pellicle. The optical mask is again inspected with the first pellicle in place using the first wavelengths of electromagnetic radiation.

An optical mask has a first pellicle attached. The optical mask is inspected with the first pellicle in place using first wavelengths of electromagnetic radiation. The first pellicle is replaced with a second pellicle. The first pellicle only allows the first wavelengths of electromagnetic radiation to pass, and the second pellicle allows second wavelengths that are shorter than the first wavelengths to pass. A photoresist is exposed using the optical mask with the second pellicle in place. The second pellicle is replaced with the first pellicle. The optical mask is again inspected with the first pellicle in place using the first wavelengths of electromagnetic radiation.

A pellicle film for extreme ultraviolet (EUV) lithography includes a graphite-containing thin film.

A pellicle film for extreme ultraviolet (EUV) lithography includes a graphite-containing thin film.

Disclosed is a photolithography (e.g., extreme ultraviolet (EUV) photolithography) system that incorporates a photomask-pellicle apparatus with an angled pellicle. The apparatus includes a photomask structure and a pellicle structure that is mounted on the photomask structure. The pellicle is essentially transparent to a given-type radiation (e.g., EUV radiation), is essentially reflective to out-of-band (OOB) radiation, and is positioned at an angle relative to the photomask. When radiation is directed toward the photomask-pellicle apparatus during a photolithographic exposure process, beams that are reflected and diffracted off of the patterned surface of the photomask structure are directed toward a target semiconductor wafer and beams that are reflected and diffracted off of the pellicle are directed away from the target semiconductor wafer. Aiming the OOB radiation away from the target semiconductor wafer improves imaging quality by minimizing the negative impact of OOB radiation. Also disclosed is an associated photolithography method.

Disclosed is a photolithography (e.g., extreme ultraviolet (EUV) photolithography) system that incorporates a photomask-pellicle apparatus with an angled pellicle. The apparatus includes a photomask structure and a pellicle structure that is mounted on the photomask structure. The pellicle is essentially transparent to a given-type radiation (e.g., EUV radiation), is essentially reflective to out-of-band (OOB) radiation, and is positioned at an angle relative to the photomask. When radiation is directed toward the photomask-pellicle apparatus during a photolithographic exposure process, beams that are reflected and diffracted off of the patterned surface of the photomask structure are directed toward a target semiconductor wafer and beams that are reflected and diffracted off of the pellicle are directed away from the target semiconductor wafer. Aiming the OOB radiation away from the target semiconductor wafer improves imaging quality by minimizing the negative impact of OOB radiation. Also disclosed is an associated photolithography method.

A method of testing a photomask assembly is disclosed. The method includes placing a photomask assembly into a chamber. The photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source in the chamber. The exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time.

A method of testing a photomask assembly is disclosed. The method includes placing a photomask assembly into a chamber. The photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source in the chamber. The exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time.