Provided are a pellicle film, a pellicle frame and a pellicle having a higher EUV transmittance. An exposure pattern plate capable of performing EUV lithography with the pellicle film, the pellicle frame or the pellicle, and a method for producing a semiconductor device, are provided. A pellicle film for exposure extendable over an opening of a support frame and having a thickness of 200 nm or less is provided. The film includes a carbon nanotube sheet. The carbon nanotube sheet includes bundles each including a plurality of carbon nanotubes, the bundles each have a diameter of 100 nm or shorter, and the bundles are aligned in a planar direction in the carbon nanotube sheet.

Provided are a pellicle film, a pellicle frame and a pellicle having a higher EUV transmittance. An exposure pattern plate capable of performing EUV lithography with the pellicle film, the pellicle frame or the pellicle, and a method for producing a semiconductor device, are provided. A pellicle film for exposure extendable over an opening of a support frame and having a thickness of 200 nm or less is provided. The film includes a carbon nanotube sheet. The carbon nanotube sheet includes bundles each including a plurality of carbon nanotubes, the bundles each have a diameter of 100 nm or shorter, and the bundles are aligned in a planar direction in the carbon nanotube sheet.

A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.

A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.

Provided is a pellicle film, a pellicle frame and a pellicle for EUV decreased in the amount of dust or the like attached thereto, and a method for producing the same. Provided is a method for producing a pellicle including forming a pellicle film above a substrate; forming a metal mask on a surface of the substrate opposite to a surface having the pellicle film formed thereon; removing a part of the substrate from the side of the metal mask; and removing the metal mask. In an embodiment, the present invention provides a pellicle film, a pellicle frame and a pellicle for EUV decreased in the amount of dust or the like attached thereto, and a method for producing the same.

Provided is a pellicle film, a pellicle frame and a pellicle for EUV decreased in the amount of dust or the like attached thereto, and a method for producing the same. Provided is a method for producing a pellicle including forming a pellicle film above a substrate; forming a metal mask on a surface of the substrate opposite to a surface having the pellicle film formed thereon; removing a part of the substrate from the side of the metal mask; and removing the metal mask. In an embodiment, the present invention provides a pellicle film, a pellicle frame and a pellicle for EUV decreased in the amount of dust or the like attached thereto, and a method for producing the same.

A pellicle is contaminated with dust or the like for various reasons during the production thereof. Especially, there is a problem that the risk that the dust or the like is attached is high during trimming or various other processes performed on a pellicle film. The present invention provides a method for producing a pellicle for EUV that decreases the attachment of dust or the like. A method for producing a pellicle includes forming a pellicle film on a substrate; trimming the substrate; and removing at least a part of the substrate after trimming the substrate. Before the part of the substrate is removed, at least particles attached to a surface of the pellicle film are removed.

A pellicle is contaminated with dust or the like for various reasons during the production thereof. Especially, there is a problem that the risk that the dust or the like is attached is high during trimming or various other processes performed on a pellicle film. The present invention provides a method for producing a pellicle for EUV that decreases the attachment of dust or the like. A method for producing a pellicle includes forming a pellicle film on a substrate; trimming the substrate; and removing at least a part of the substrate after trimming the substrate. Before the part of the substrate is removed, at least particles attached to a surface of the pellicle film are removed.

The present invention is to provide a pellicle frame characterized by including a metal or alloy having a linear expansion coefficient of 10?10 (1/K) or less and further a density of 4.6 g/cm.sup.3 or less, and a pellicle characterized by including the pellicle frame as an element.

The present invention is to provide a pellicle frame characterized by including a metal or alloy having a linear expansion coefficient of 10?10 (1/K) or less and further a density of 4.6 g/cm.sup.3 or less, and a pellicle characterized by including the pellicle frame as an element.