A robust, high-transmission pellicle for extreme ultraviolet lithography systems is disclosed. In one example, the present disclosure provides a pellicle that includes a membrane and a frame supporting the membrane. The membrane may be formed from at least one of a transparent carbon-based film and a transparent silicon based film. The at least one of the transparent carbon-based film and the transparent silicon based film may further be coated with a protective shell. The frame may include at least one aperture to allow for a flow of air through a portion of the pellicle.

A method for manufacturing an extreme ultraviolet (EUV) pellicle structure may include preparing a pellicle membrane that includes an intermediate layer structure in which EUV transmission layers and heat dissipation layers are alternately stacked, a first thin layer disposed on a top surface of the intermediate layer structure, and a second thin layer disposed on a bottom surface of the intermediate layer structure and having a heat emissivity lower than that of the first thin layer, and disposing a cooling structure for absorbing heat from the pellicle membrane on an edge sidewall of the pellicle membrane at which the heat dissipation layers are exposed.

The present invention is concerned with an apparatus for shielding a reticle for EUV lithography. The apparatus comprises a pellicle, and at least one actuator in communication with the pellicle, the actuator being configured to induce, in use, movement of the pellicle with respect to a reticle.

The present invention is concerned with an apparatus for shielding a reticle for EUV lithography. The apparatus comprises a pellicle, and at least one actuator in communication with the pellicle, the actuator being configured to induce, in use, movement of the pellicle with respect to a reticle.

A mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount is configured to suspend the pellicle frame relative to the patterning device such that there is a gap between the pellicle frame and the patterning device; and wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.

A mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount is configured to suspend the pellicle frame relative to the patterning device such that there is a gap between the pellicle frame and the patterning device; and wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.

The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.

The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.

The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.

The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.