The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.

The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.

A pellicle includes a frame. The frame includes a check valve, wherein the check valve is configured to permit gas flow from an interior of the pellicle to an exterior of the pellicle. The frame further includes a recess in a bottom surface of the frame. The pellicle further includes a membrane extending across the frame. The pellicle further includes a gasket configured to fit within the recess.

A pellicle includes a frame. The frame includes a check valve, wherein the check valve is configured to permit gas flow from an interior of the pellicle to an exterior of the pellicle. The frame further includes a recess in a bottom surface of the frame. The pellicle further includes a membrane extending across the frame. The pellicle further includes a gasket configured to fit within the recess.

The present disclosure provides an apparatus for a semiconductor lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a pellicle frame attached to the pellicle membrane. The pellicle frame has a surface that defines at least one groove. The apparatus further includes a substrate that is in contact with the surface of the pellicle frame such that the grove is positioned between the pellicle frame and the substrate.

The present disclosure provides an apparatus for a semiconductor lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a pellicle frame attached to the pellicle membrane. The pellicle frame has a surface that defines at least one groove. The apparatus further includes a substrate that is in contact with the surface of the pellicle frame such that the grove is positioned between the pellicle frame and the substrate.

A pellicle is proposed in which an adhesive layer is formed of an adhesive which undergoes a hardness change at a rate from 50% through +50% of its initial hardness, measured after curing, when it is let to sit in atmosphere of a temperature of 300 degrees C. for 7 days on end; the rate of hardness change being defined by a following equation:
Rate of hardness change (%)={(hardness after the sitting)(initial hardness before the sitting)}initial hardness before the sitting)100.

A pellicle is proposed in which an adhesive layer is formed of an adhesive which undergoes a hardness change at a rate from 50% through +50% of its initial hardness, measured after curing, when it is let to sit in atmosphere of a temperature of 300 degrees C. for 7 days on end; the rate of hardness change being defined by a following equation:
Rate of hardness change (%)={(hardness after the sitting)(initial hardness before the sitting)}initial hardness before the sitting)100.

A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including a membrane layer between a supporting substrate and an attachment substrate, wherein the supporting substrate includes an inner region and a border region; processing the stack, including selectively removing the inner region of the supporting substrate, to form a membrane assembly comprising: a membrane formed from at least the membrane layer; and a support holding the membrane, the support formed at least partially from the border region of the supporting substrate. The attachment substrate can be bonded to the rest of the stack.

A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including a membrane layer between a supporting substrate and an attachment substrate, wherein the supporting substrate includes an inner region and a border region; processing the stack, including selectively removing the inner region of the supporting substrate, to form a membrane assembly comprising: a membrane formed from at least the membrane layer; and a support holding the membrane, the support formed at least partially from the border region of the supporting substrate. The attachment substrate can be bonded to the rest of the stack.