A pellicle assembly for large-size photomasks including a frame member configured to be affixed to a large-size photomask substrate, a substantially rigid and transparent pellicle membrane affixed to the frame member so as to protect at least a portion of the large-size photomask substrate from contamination during usage, storage and/or transport, and a coating on at least one of top and bottom surfaces of the pellicle membrane that binds the pellicle membrane to prevent separation of pellicle membrane material in the event of breakage.

A mask assembly according to an embodiment includes a support frame including at least four sides, a first frame disposed on the support frame and extending in a first direction, a second frame disposed on the support frame and extending in a second direction intersecting the first direction, and a mask sheet disposed on the support frame and including at least one opening. At least a side of the support frame includes a first protruding portion disposed at a first edge of the side, a second protruding portion disposed at a second edge of the side, and a recess portion disposed between the first protruding portion and the second protruding portion.

A mask assembly according to an embodiment includes a support frame including at least four sides, a first frame disposed on the support frame and extending in a first direction, a second frame disposed on the support frame and extending in a second direction intersecting the first direction, and a mask sheet disposed on the support frame and including at least one opening. At least a side of the support frame includes a first protruding portion disposed at a first edge of the side, a second protruding portion disposed at a second edge of the side, and a recess portion disposed between the first protruding portion and the second protruding portion.

This application relates to a pellicle for extreme ultraviolet lithography containing amorphous carbon and a manufacturing method thereof. In one aspect, the pellicle includes a substrate having an opening formed in a central portion, a support layer formed on the substrate to cover the opening, and a pellicle layer formed on the support layer and containing amorphous carbon. The pellicle layer may include a core layer formed on the support layer, and a capping layer formed on the core layer and may further include a buffer layer. At least one of the core layer, the capping layer, or the buffer layer may be an amorphous carbon layer.

This application relates to a pellicle for extreme ultraviolet lithography containing amorphous carbon and a manufacturing method thereof. In one aspect, the pellicle includes a substrate having an opening formed in a central portion, a support layer formed on the substrate to cover the opening, and a pellicle layer formed on the support layer and containing amorphous carbon. The pellicle layer may include a core layer formed on the support layer, and a capping layer formed on the core layer and may further include a buffer layer. At least one of the core layer, the capping layer, or the buffer layer may be an amorphous carbon layer.

This application relates to a pellicle for extreme ultraviolet lithography and a manufacturing method thereof using the low-temperature direct growth method of multilayer graphene. In one aspect, the method includes forming an etch stopper on a substrate, forming a seed layer on the etch stopper, the seed layer including at least one of amorphous boron, BN, BCN, B.sub.4C, or Me-X (Me is at least one of Si, Ti, Mo, or Zr, and X is at least one of B, C, or N). The method may also include forming a metal catalyst layer on the seed layer; forming an amorphous carbon layer on the metal catalyst layer, and directly growing multilayer graphene on the seed layer through interlayer exchange between the metal catalyst layer and the amorphous carbon layer by performing a low-temperature heat treatment at 450° C. to 600° C.

This application relates to a pellicle for extreme ultraviolet lithography and a manufacturing method thereof using the low-temperature direct growth method of multilayer graphene. In one aspect, the method includes forming an etch stopper on a substrate, forming a seed layer on the etch stopper, the seed layer including at least one of amorphous boron, BN, BCN, B.sub.4C, or Me-X (Me is at least one of Si, Ti, Mo, or Zr, and X is at least one of B, C, or N). The method may also include forming a metal catalyst layer on the seed layer; forming an amorphous carbon layer on the metal catalyst layer, and directly growing multilayer graphene on the seed layer through interlayer exchange between the metal catalyst layer and the amorphous carbon layer by performing a low-temperature heat treatment at 450° C. to 600° C.

There is provided a photomask including a pellicle. The photomask may include a substrate and a pellicle, and mask patterns may be disposed on the substrate. The pellicle may include a carbon nanotube membrane providing a plurality of pores. The pellicle may include a coating layer on the carbon nanotube membrane.

There is provided a photomask including a pellicle. The photomask may include a substrate and a pellicle, and mask patterns may be disposed on the substrate. The pellicle may include a carbon nanotube membrane providing a plurality of pores. The pellicle may include a coating layer on the carbon nanotube membrane.

A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.