Patent classifications
G03F1/64
PELLICLE AND METHOD OF MANUFACTURING THEREOF
A pellicle for an extreme ultraviolet (EUV) reflective mask includes a membrane attached to a frame. The membrane includes a plurality of nanotube bundles, each including a plurality of multi-wall nanotubes made of a first nanotube material and bonded together, and a plurality wrapping layers of a second nanotube material on the plurality of nanotube bundles, the second nanotube material being different from the first nanotube material. The pellicle advantageously has good EUV light transmittance, increased strength under EUV exposure environment, and thereby prolonged lifetime.
EXTREME ULTRAVIOLET PELLICLE STORAGE AND METHOD OF PRESERVING EXTREME ULTRAVIOLET PELLICLE PROPERTIES THEREOF
A method of storing extreme ultraviolet (EUV) pellicles or pellicle film is disclosed. The method includes selecting a material, such as stainless steel or glass material, for the construction of the storage or transportation containers. Vacuum-sealed or inert-gas-filled containers are further preferred. The material maintains one or more properties of extreme ultraviolet (EUV) lithography pellicle, the one or more properties being selected from EUV transmission rate, EUV transmission variation, EUV scattering, EUV pellicle film deflection, EUV pellicle film tensile strength, or a combination thereof.
EXTREME ULTRAVIOLET PELLICLE STORAGE AND METHOD OF PRESERVING EXTREME ULTRAVIOLET PELLICLE PROPERTIES THEREOF
A method of storing extreme ultraviolet (EUV) pellicles or pellicle film is disclosed. The method includes selecting a material, such as stainless steel or glass material, for the construction of the storage or transportation containers. Vacuum-sealed or inert-gas-filled containers are further preferred. The material maintains one or more properties of extreme ultraviolet (EUV) lithography pellicle, the one or more properties being selected from EUV transmission rate, EUV transmission variation, EUV scattering, EUV pellicle film deflection, EUV pellicle film tensile strength, or a combination thereof.
PELLICLE FOR EXPOSURE CAPABLE OF EASY ADJUSTMENT OF ATMOSPHERIC PRESSURE
The present disclosure provides a pellicle including a pellicle frame; a pellicle film provided on an upper end surface of the pellicle frame; a vent hole provided in the pellicle frame; and a filter that closes the vent hole. The present disclosure also provides a pellicle frame with a filter including a pellicle frame; a vent hole provided in the pellicle frame; and a filter that closes the vent hole.
PELLICLE FOR EXPOSURE CAPABLE OF EASY ADJUSTMENT OF ATMOSPHERIC PRESSURE
The present disclosure provides a pellicle including a pellicle frame; a pellicle film provided on an upper end surface of the pellicle frame; a vent hole provided in the pellicle frame; and a filter that closes the vent hole. The present disclosure also provides a pellicle frame with a filter including a pellicle frame; a vent hole provided in the pellicle frame; and a filter that closes the vent hole.
Pellicle
A pellicle characterized by having an amount of released aqueous gas of 1?10.sup.?3 Pa.Math.L/s or less per pellicle, an amount of released hydrocarbon-based gas of 1?10.sup.?5 Pa.Math.L/s or less per pellicle in a range of measured mass number of 45 to 100 amu, and an amount of released hydrocarbon-based gas of 4?10.sup.?7 Pa.Math.L/s or less per pellicle in a range of measured mass number of 101 to 200 amu, under vacuum after the pellicle has been left to stand for 10 minutes in an atmosphere of 23? C. and 1?10.sup.?3 Pa or less.
Pellicle
A pellicle characterized by having an amount of released aqueous gas of 1?10.sup.?3 Pa.Math.L/s or less per pellicle, an amount of released hydrocarbon-based gas of 1?10.sup.?5 Pa.Math.L/s or less per pellicle in a range of measured mass number of 45 to 100 amu, and an amount of released hydrocarbon-based gas of 4?10.sup.?7 Pa.Math.L/s or less per pellicle in a range of measured mass number of 101 to 200 amu, under vacuum after the pellicle has been left to stand for 10 minutes in an atmosphere of 23? C. and 1?10.sup.?3 Pa or less.
Ultra-thin, ultra-low density films for EUV lithography
A filtration formed nanostructure pellicle film is disclosed. The filtration formed nanostructure pellicle film includes a plurality of carbon nanofibers that are intersected randomly to form an interconnected network structure in a planar orientation. The interconnected structure allows for a high minimum EUV transmission rate of at least 92%, with a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.
Ultra-thin, ultra-low density films for EUV lithography
A filtration formed nanostructure pellicle film is disclosed. The filtration formed nanostructure pellicle film includes a plurality of carbon nanofibers that are intersected randomly to form an interconnected network structure in a planar orientation. The interconnected structure allows for a high minimum EUV transmission rate of at least 92%, with a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.
PELLICLE FRAME, PELLICLE, METHOD OF PRODUCING PELLICLE, AND METHOD OF EVALUATING PELLICLE FRAME
The present invention provides a pellicle frame (excluding a pellicle frame containing quartz glass) having a rectangular shape, which has: one end face to be provided with an adhesive layer capable of adhering to a photomask; and the other end face for supporting a pellicle film. The one end face has an amount of twist ?d of 10 ?m or less. The amount of twist ?d of the one end face indicates the maximum value of the distance between a virtual plane that passes through three points, of four points at four corners of the one end face, and one remaining point.