A method of fabricating a circuit element, such as a quantum computing circuit element, including obtaining a lithography mask write file that includes mask information characterizing one or more mask features, obtaining a uniformity function that is configured to modify the mask information to compensate for a non-uniform deposition process, applying the uniformity function to the lithography mask write to obtain a modified lithography mask write file, and performing lithography as directed by the modified lithography mask write file.

A method of fabricating a circuit element, such as a quantum computing circuit element, including obtaining a lithography mask write file that includes mask information characterizing one or more mask features, obtaining a uniformity function that is configured to modify the mask information to compensate for a non-uniform deposition process, applying the uniformity function to the lithography mask write to obtain a modified lithography mask write file, and performing lithography as directed by the modified lithography mask write file.

A method (of forming a semiconductor device) includes: forming an active area structure extending in a first direction; forming gate structures over the active area structure and extending in a second direction substantially perpendicular to the first direction; forming contact-source/drain (CSD) conductors over the active area structure, interleaved with corresponding ones of the gate structures, and extending in the second direction; and forming first conductive segments in a first layer of metallization (M_lst layer) over the active area structure and extending in the first direction, the first conductive segments including a first gate-signal-carrying (GSC) conductor which overlaps the active area structure.

A method (of forming a semiconductor device) includes: forming an active area structure extending in a first direction; forming gate structures over the active area structure and extending in a second direction substantially perpendicular to the first direction; forming contact-source/drain (CSD) conductors over the active area structure, interleaved with corresponding ones of the gate structures, and extending in the second direction; and forming first conductive segments in a first layer of metallization (M_lst layer) over the active area structure and extending in the first direction, the first conductive segments including a first gate-signal-carrying (GSC) conductor which overlaps the active area structure.

Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area, based on an original set of exposure information. A pre-proximity effect correction (PEC) maximum dose for the local pattern density is determined, based on a pre-determined target post-PEC maximum dose. The pre-PEC maximum dose is calculated near an edge of the desired shape. Methods also include modifying the original set of exposure information with the pre-PEC maximum dose to create a modified set of exposure information.

Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area, based on an original set of exposure information. A pre-proximity effect correction (PEC) maximum dose for the local pattern density is determined, based on a pre-determined target post-PEC maximum dose. The pre-PEC maximum dose is calculated near an edge of the desired shape. Methods also include modifying the original set of exposure information with the pre-PEC maximum dose to create a modified set of exposure information.

Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.

Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.

Overlay is determined for a device using signals measured from the device and a signal response to overlay determined from a plurality of calibration targets. Each calibration target has the same design as the device, but includes a known overlay shift. The calibration targets may be located in a scribe line, within a product area on the wafer, or on a separate calibration wafer. Each calibration target may have a different overlay shift, including zero overlay shift. The device may serve as a calibration target with zero overlay shift. The overlay shift may be in two orthogonal directions. The signal response to overlay may be determined based on a set of signals obtained from the calibration targets. A second set of signals may then be obtained from the device and the overlay determined based on the second set of signals and the determined signal response to overlay.

Overlay is determined for a device using signals measured from the device and a signal response to overlay determined from a plurality of calibration targets. Each calibration target has the same design as the device, but includes a known overlay shift. The calibration targets may be located in a scribe line, within a product area on the wafer, or on a separate calibration wafer. Each calibration target may have a different overlay shift, including zero overlay shift. The device may serve as a calibration target with zero overlay shift. The overlay shift may be in two orthogonal directions. The signal response to overlay may be determined based on a set of signals obtained from the calibration targets. A second set of signals may then be obtained from the device and the overlay determined based on the second set of signals and the determined signal response to overlay.