A method of fabricating a circuit element, such as a quantum computing circuit element, including obtaining a lithography mask write file that includes mask information characterizing one or more mask features, obtaining a uniformity function that is configured to modify the mask information to compensate for a non-uniform deposition process, applying the uniformity function to the lithography mask write to obtain a modified lithography mask write file, and performing lithography as directed by the modified lithography mask write file.

A method of fabricating a circuit element, such as a quantum computing circuit element, including obtaining a lithography mask write file that includes mask information characterizing one or more mask features, obtaining a uniformity function that is configured to modify the mask information to compensate for a non-uniform deposition process, applying the uniformity function to the lithography mask write to obtain a modified lithography mask write file, and performing lithography as directed by the modified lithography mask write file.

A method for manufacturing a photo mask for a semiconductor device includes receiving a plurality of hotspot regions of a mask layout corresponding to the semiconductor device. The method further includes classifying the plurality of hotspot regions into two or more hotspot groups such that same or similar hotspot regions are classified into same hotspot groups. The hotspot groups includes a first hotspot group that has at least two hotspot regions. The method also includes correcting a first hotspot region of the first hotspot group to generate an enhancement of the first hotspot region and correcting other hotspot regions of the first hotspot group using the enhancement of the first hotspot region to generate enhancements of other hotspot regions of the first hotspot group.

A method for manufacturing a photo mask for a semiconductor device includes receiving a plurality of hotspot regions of a mask layout corresponding to the semiconductor device. The method further includes classifying the plurality of hotspot regions into two or more hotspot groups such that same or similar hotspot regions are classified into same hotspot groups. The hotspot groups includes a first hotspot group that has at least two hotspot regions. The method also includes correcting a first hotspot region of the first hotspot group to generate an enhancement of the first hotspot region and correcting other hotspot regions of the first hotspot group using the enhancement of the first hotspot region to generate enhancements of other hotspot regions of the first hotspot group.

Disclosed are a photomask, an exposure apparatus, and a method of fabricating a three-dimensional semiconductor memory device using the same. The photomask may include a mask substrate, a first mask pattern on the mask substrate, and an optical path modulation substrate. The optical path modulation substrate may include a first region on a portion of the first mask pattern, and a second region on another portion of the first mask pattern. The second region has a thickness that is less than a thickness of the first region.

Disclosed is a method of determining a process window within a process space comprising obtaining contour data relating to features to be provided to a substrate across a plurality of layers, for each of a plurality of process conditions associated with providing the features across said plurality of layers and failure mode data describing constraints on the contour data across the plurality of layers. The failure mode data is applied to the contour data to determine a failure count for each process condition; and the process window is determined by associating each process condition to its corresponding failure count. Also disclosed is a method of determining an actuation constrained subspace of the process window based on actuation constraints imposed by the plurality of actuators.

The present application discloses an image stitching method for a stitching product, which includes: step 1: providing a chip design layout of the stitching product; step 2: designing a mask layout according to the chip design layout, including: step 21: setting unit mask images; step 22: merging logic images or cutting path images of adjacent areas between unit regions together to set corresponding peripheral mask images; step 23: merging the same peripheral mask images into one; step 24: constituting a mask layer by using the unit mask images and each peripheral mask image, and forming the mask layout on a mask; step 3: performing repeated exposure to form the stitching product. The present application can reduce the number of mask images, the number of times of exposure and the time of exposure.

The present application discloses an image stitching method for a stitching product, which includes: step 1: providing a chip design layout of the stitching product; step 2: designing a mask layout according to the chip design layout, including: step 21: setting unit mask images; step 22: merging logic images or cutting path images of adjacent areas between unit regions together to set corresponding peripheral mask images; step 23: merging the same peripheral mask images into one; step 24: constituting a mask layer by using the unit mask images and each peripheral mask image, and forming the mask layout on a mask; step 3: performing repeated exposure to form the stitching product. The present application can reduce the number of mask images, the number of times of exposure and the time of exposure.

A mask layout design method capable of quickly and effectively designing a crack-resistant mask layout in a full-chip scale, a mask manufacturing method including the mask layout design method, and a mask layout are provided. The mask layout design method includes designing a full-chip layout with respect to a mask; extracting a representative pattern from the full-chip layout; detecting a stress weak point in the representative pattern; verifying the stress weak point by forming a pattern on a wafer; and changing a design rule with respect to the full-chip layout.

A layout file for an integrated circuit has drawn geometries. Variable fill geometries are added to local areas based on densities of the drawn geometries in windows associated with the local areas and on the global density of all the drawn geometries in the layout file. Each window has a separate local area associated with it. The densities of the variable fill geometries in the local areas are not all equal. Densities of the fill geometries are higher in local areas associated with windows having lower densities of the drawn geometries, and for lower values of the global density. The layout file is stored in a computer-readable medium which may be used to produce a photomask for manufacturing an integrated circuit.