The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.

A process for inspecting an EUV mask blank capable of distinguishing phase defects and amplitude defects and capable of detecting small amplitude defects, a process for producing an EUV mask blank using the inspection process, and an EUV mask blank obtainable by such a process. A process for inspecting a reflective mask blank for EUV lithography having a multilayer reflective film and an absorber layer. The process includes a first step of detecting in-plane defects in the multilayer reflective film by applying EUV light to the surface of the multilayer reflective film, a second step of detecting in-plane defects from the absorber layer by applying light having a wavelength of from 150 to 600 nm to the surface of the absorber layer, and a step of distinguishing phase defects and amplitude defects in the reflective mask blank by comparison between the first and second in-plane defect data.

Disclosed are a repairable photomask structure and extreme ultraviolet (EUV) photolithography methods. The structure includes a multilayer stack, a protective layer above the stack and a light absorber layer above the protective layer. The stack includes alternating layers of high and low atomic number materials and a selected one of the high atomic number material layers is different from the others such that it functions as an etch stop layer. This configuration allows the photomask structure to be repaired if/when defects are detected near exposed surfaces of the multilayer stack following light absorber layer patterning. For example, when a defect is detected near an exposed surface of the stack in a specific opening in the light absorber layer, the opening can be selectively extended down to the etch stop layer or all the openings can be extended down to the etch stop layer in order to remove that defect.

A method and apparatus for use in surface delayering for fault isolation and defect localization of a sample work piece is provided. More particularly, a method and apparatus for mechanically peeling of one or more layers from the sample in a rapid, controlled, and accurate manner is provided. A programmable actuator includes a delayering probe tip with a cutting edge that is shaped to quickly and accurately peel away a layer of material from a sample. The cutting face of the delayering probe tip is configured so that each peeling step peels away an area of material having a linear dimension substantially equal to the linear dimension of the delayering probe tip cutting face. The surface delayering may take place inside a vacuum chamber so that the target area of the sample can be observed in-situ with FIB/SEM imaging.

A method and apparatus for use in surface delayering for fault isolation and defect localization of a sample work piece is provided. More particularly, a method and apparatus for mechanically peeling of one or more layers from the sample in a rapid, controlled, and accurate manner is provided. A programmable actuator includes a delayering probe tip with a cutting edge that is shaped to quickly and accurately peel away a layer of material from a sample. The cutting face of the delayering probe tip is configured so that each peeling step peels away an area of material having a linear dimension substantially equal to the linear dimension of the delayering probe tip cutting face. The surface delayering may take place inside a vacuum chamber so that the target area of the sample can be observed in-situ with FIB/SEM imaging.

A method for the simulation of a photolithographic process for generating a wafer structure includes providing an aerial image of a region of a mask that includes the mask structure, prescribing a range of intensities, determining auxiliary or potential wafer structures for different threshold values within the range of intensities, determining the number of structure elements for each of the auxiliary or potential wafer structures, determining a stability range consisting of successive threshold values from the threshold values that were used for the determination of auxiliary or potential wafer structures, within the stability range the number of structure elements of the auxiliary or potential wafer structures remaining constant or lying within a prescribed range, and determining the wafer structure on the basis of the aerial image and a threshold value within the stability range. A microscope for carrying out the method is also provided.

A method for the simulation of a photolithographic process for generating a wafer structure includes providing an aerial image of a region of a mask that includes the mask structure, prescribing a range of intensities, determining auxiliary or potential wafer structures for different threshold values within the range of intensities, determining the number of structure elements for each of the auxiliary or potential wafer structures, determining a stability range consisting of successive threshold values from the threshold values that were used for the determination of auxiliary or potential wafer structures, within the stability range the number of structure elements of the auxiliary or potential wafer structures remaining constant or lying within a prescribed range, and determining the wafer structure on the basis of the aerial image and a threshold value within the stability range. A microscope for carrying out the method is also provided.

An original plate manufacturing method includes preparing first design data and second design data from a predetermined pattern to be formed on a target object. The first design data corresponds to a first design pattern, and the second design data corresponds to a second design pattern. The first and second design patterns are complementary portions of the predetermined pattern. The first design pattern is then formed on the target object based on the first design data. An inspection is performed on the target object on which the first design pattern has been formed. Third design data is generated based on a result of the inspection. The second design data is then adjusted based on the third design data to generate corrected second design data. The target object is then patterned again based on the corrected second design data.

An original plate manufacturing method includes preparing first design data and second design data from a predetermined pattern to be formed on a target object. The first design data corresponds to a first design pattern, and the second design data corresponds to a second design pattern. The first and second design patterns are complementary portions of the predetermined pattern. The first design pattern is then formed on the target object based on the first design data. An inspection is performed on the target object on which the first design pattern has been formed. Third design data is generated based on a result of the inspection. The second design data is then adjusted based on the third design data to generate corrected second design data. The target object is then patterned again based on the corrected second design data.

Lithography mask repair methods are disclosed. In one embodiment, a method of repairing a lithography mask includes providing a lithography mask, exposing a back side of the lithography mask to vacuum ultraviolet (VUV) energy, and cleaning the lithography mask.