A method comprises receiving an integrated circuit (IC) chip design, and generating, by one or more processors, a wafer image and a wafer target from the IC chip design. The method further comprises generating, by the one or more processors, sensitivity information based on a determination that the wafer image and the wafer target converge, and outputting the sensitivity information. The sensitivity information is associated with writing a mask written for the IC chip design.

A method comprises receiving an integrated circuit (IC) chip design, and generating, by one or more processors and based on the IC chip design, dose information, a wafer image, and a wafer target. Further, the method comprises modifying, by the one or more processors, the dose information based on a comparison of the wafer image and the wafer target. Further, the method comprises outputting the modified dose information to a mask writing device.

A method comprises receiving an integrated circuit (IC) design file and determining, by one or more processors, dose information from the IC design file. The method further comprises determining, by the one or more processors, a mask vector file from the IC design file, and converting, by the one or more processors, the dose information to a vector file format. Further, the method comprises outputting the dose information in the vector file format and the mask vector file to a mask writer device.

A process proximity correction method is performed by a process proximity correction computing device which performs a process proximity correction (PPC) through at least one of a plurality of processors. The process proximity correction method includes: converting a target layout including a plurality of patterns into an image, zooming-in or zooming-out the image at a plurality of magnifications to generate a plurality of input channels, receiving the plurality of input channels and performing machine learning to predict an after-cleaning image (ACI), comparing the predicted after-cleaning image with a target value to generate an after-cleaning image error, and adjusting the target layout on the basis of the after-cleaning image error.

A process proximity correction method is performed by a process proximity correction computing device which performs a process proximity correction (PPC) through at least one of a plurality of processors. The process proximity correction method includes: converting a target layout including a plurality of patterns into an image, zooming-in or zooming-out the image at a plurality of magnifications to generate a plurality of input channels, receiving the plurality of input channels and performing machine learning to predict an after-cleaning image (ACI), comparing the predicted after-cleaning image with a target value to generate an after-cleaning image error, and adjusting the target layout on the basis of the after-cleaning image error.

An original plate manufacturing method includes preparing first design data and second design data from a predetermined pattern to be formed on a target object. The first design data corresponds to a first design pattern, and the second design data corresponds to a second design pattern. The first and second design patterns are complementary portions of the predetermined pattern. The first design pattern is then formed on the target object based on the first design data. An inspection is performed on the target object on which the first design pattern has been formed. Third design data is generated based on a result of the inspection. The second design data is then adjusted based on the third design data to generate corrected second design data. The target object is then patterned again based on the corrected second design data.

An original plate manufacturing method includes preparing first design data and second design data from a predetermined pattern to be formed on a target object. The first design data corresponds to a first design pattern, and the second design data corresponds to a second design pattern. The first and second design patterns are complementary portions of the predetermined pattern. The first design pattern is then formed on the target object based on the first design data. An inspection is performed on the target object on which the first design pattern has been formed. Third design data is generated based on a result of the inspection. The second design data is then adjusted based on the third design data to generate corrected second design data. The target object is then patterned again based on the corrected second design data.

Any defects in the reflective multilayer coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. To repair the defect, a columnar reflector, which acts as a Bragg reflector, is deposited according to various embodiments so as to locally compensate and repair the defect. According to the embodiments of the present disclosure, the reflective loss due to the defect can be compensated and recover the phase different due to the defect from, so as to form a desirable wafer printed image.

Any defects in the reflective multilayer coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. To repair the defect, a columnar reflector, which acts as a Bragg reflector, is deposited according to various embodiments so as to locally compensate and repair the defect. According to the embodiments of the present disclosure, the reflective loss due to the defect can be compensated and recover the phase different due to the defect from, so as to form a desirable wafer printed image.

A mask, a manufacturing method thereof, and a patterning method employing the mask. In the mask, a plurality of masks can be combined into one mask. The pattern area (01) of the mask is provided with a first pattern section (10) and a second pattern section (20) which are not overlapped with each other; light of a first wavelength can run through the first pattern section (10) but light of a second wavelength cannot run through the first pattern section; the light of the second wavelength can run thorough the second pattern section (20) but the light of the first wavelength cannot run through the second pattern section; and the light of the first wavelength and the light of the second wavelength can run through the non-pattern area, or any of the light of the first wavelength and the light of the second wavelength cannot run through the non-pattern area. The mask is obtained by combining a plurality of masks.