A method of manufacturing a semiconductor device includes heating a pellicle disposed over a photomask. Actinic radiation is passed through the pellicle to selectively expose a photoresist layer on a substrate. The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer.

A method for manufacturing grating reference materials having a self-traceability includes: acquiring a mask substrate including a window region and a non-window region; fabricating, a self-traceability mask on the mask substrate by using a laser-focused atomic deposition technique; acquiring a photoresist sample including an extreme ultraviolet photoresist and a second substrate; exposing the extreme ultraviolet photoresist by combining the self-traceability mask with the soft x-ray interference lithography, and then performing a development process after exposing to obtain a photoresist grating structure; and transferring the photoresist grating structure to the second substrate to obtain the grating reference materials.

A method for manufacturing grating reference materials having a self-traceability includes: acquiring a mask substrate including a window region and a non-window region; fabricating, a self-traceability mask on the mask substrate by using a laser-focused atomic deposition technique; acquiring a photoresist sample including an extreme ultraviolet photoresist and a second substrate; exposing the extreme ultraviolet photoresist by combining the self-traceability mask with the soft x-ray interference lithography, and then performing a development process after exposing to obtain a photoresist grating structure; and transferring the photoresist grating structure to the second substrate to obtain the grating reference materials.

A method includes forming a photoresist layer over a wafer. The photoresist layer is exposed to a pattern of radiation using a photomask. The photoresist layer is developed after the photoresist layer is exposed to the pattern of radiation. The photomask includes a substrate and at least one opaque main feature. The substrate has a recessed region recessed from a first surface of the substrate and has a first width. The at least one opaque main feature protrudes from the first surface of the substrate and has a second width greater than the first width of the recessed region of the substrate. A height of the at least one opaque main feature is greater than a depth of the recess region of the substrate.

A method includes forming a photoresist layer over a wafer. The photoresist layer is exposed to a pattern of radiation using a photomask. The photoresist layer is developed after the photoresist layer is exposed to the pattern of radiation. The photomask includes a substrate and at least one opaque main feature. The substrate has a recessed region recessed from a first surface of the substrate and has a first width. The at least one opaque main feature protrudes from the first surface of the substrate and has a second width greater than the first width of the recessed region of the substrate. A height of the at least one opaque main feature is greater than a depth of the recess region of the substrate.

A mask is provided. The mask is applicable to prepare an organic functional layer of a sub-pixel in a display panel. The display panel includes a plurality of pixel units and a pixel defining layer, wherein each pixel unit includes a plurality of sub-pixels, and the pixel defining layer surrounds each sub-pixel. The mask includes a substrate and at least one photo spacer, wherein the substrate includes an opening region and a light shielding region. The opening region exposes a light emitting region of part of the sub-pixels, and the light shielding region covers the remaining sub-pixels and the pixel defining layer. The photo spacer is disposed in the light shielding region.

A mask is provided. The mask is applicable to prepare an organic functional layer of a sub-pixel in a display panel. The display panel includes a plurality of pixel units and a pixel defining layer, wherein each pixel unit includes a plurality of sub-pixels, and the pixel defining layer surrounds each sub-pixel. The mask includes a substrate and at least one photo spacer, wherein the substrate includes an opening region and a light shielding region. The opening region exposes a light emitting region of part of the sub-pixels, and the light shielding region covers the remaining sub-pixels and the pixel defining layer. The photo spacer is disposed in the light shielding region.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.