A method of manufacturing a semiconductor structure includes providing a mask including a first substrate; a first mask layer disposed over the first substrate, including a plurality of first recesses extended through the first mask layer; a second mask layer disposed over the first mask layer and including a plurality of second recesses extended through the second mask layer; providing a second substrate including a photoresist disposed over the second substrate; and projecting a predetermined electromagnetic radiation through the mask towards the photoresist, wherein the first mask layer is at least partially transparent to the predetermined electromagnetic radiation, the second mask layer is opaque to the predetermined electromagnetic radiation, and at least a portion of the second mask layer is disposed between two of the plurality of second recesses.

A method of manufacturing a semiconductor structure includes providing a mask including a first substrate; a first mask layer disposed over the first substrate, including a plurality of first recesses extended through the first mask layer; a second mask layer disposed over the first mask layer and including a plurality of second recesses extended through the second mask layer; providing a second substrate including a photoresist disposed over the second substrate; and projecting a predetermined electromagnetic radiation through the mask towards the photoresist, wherein the first mask layer is at least partially transparent to the predetermined electromagnetic radiation, the second mask layer is opaque to the predetermined electromagnetic radiation, and at least a portion of the second mask layer is disposed between two of the plurality of second recesses.

Techniques relating to synthesizing masks for use in manufacturing a semiconductor device are disclosed. A plurality of training masks, for a machine learning (ML) model, are generated by synthesizing one or more polygons, relating to a design pattern for the semiconductor device, using Inverse Lithography Technology (ILT) (106). The ML model is trained using both the plurality of training masks generated using ILT, and the design pattern for the semiconductor device, as inputs (108). The trained ML model is configured to synthesize one or more masks, for use in manufacturing the semiconductor device, based on the design pattern (110).

Techniques relating to synthesizing masks for use in manufacturing a semiconductor device are disclosed. A plurality of training masks, for a machine learning (ML) model, are generated by synthesizing one or more polygons, relating to a design pattern for the semiconductor device, using Inverse Lithography Technology (ILT) (106). The ML model is trained using both the plurality of training masks generated using ILT, and the design pattern for the semiconductor device, as inputs (108). The trained ML model is configured to synthesize one or more masks, for use in manufacturing the semiconductor device, based on the design pattern (110).

A method of manufacturing a semiconductor structure includes providing a mask including a first substrate; a first mask layer disposed over the first substrate, including a plurality of first recesses extended through the first mask layer; a second mask layer disposed over the first mask layer and including a plurality of second recesses extended through the second mask layer; providing a second substrate including a photoresist disposed over the second substrate; and projecting a predetermined electromagnetic radiation through the mask towards the photoresist, wherein the first mask layer is at least partially transparent to the predetermined electromagnetic radiation, the second mask layer is opaque to the predetermined electromagnetic radiation, and at least a portion of the second mask layer is disposed between two of the plurality of second recesses.

A method of manufacturing a semiconductor structure includes providing a mask including a first substrate; a first mask layer disposed over the first substrate, including a plurality of first recesses extended through the first mask layer; a second mask layer disposed over the first mask layer and including a plurality of second recesses extended through the second mask layer; providing a second substrate including a photoresist disposed over the second substrate; and projecting a predetermined electromagnetic radiation through the mask towards the photoresist, wherein the first mask layer is at least partially transparent to the predetermined electromagnetic radiation, the second mask layer is opaque to the predetermined electromagnetic radiation, and at least a portion of the second mask layer is disposed between two of the plurality of second recesses.

In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

A device, a computer program, a computer readable medium and a method setting respective relative laser intensities to a plurality of pixels representing a lithographic exposure. The plurality of pixels comprises at least one edge pixel arranged on an edge of an area of pixels to be exposed, and at least one neighbouring pixel. The at least one neighbouring pixel is arranged one pixel away from the at least one edge pixel in a perpendicular direction away from the edge towards the area of pixels to be exposed. The method comprises decreasing proportionally a relative laser intensity of each pixel of the plurality of pixels from a previously set respective first relative laser intensity to a respective second relative laser intensity. A laser dose translation of relative laser intensity of pixels proportionally adjusted from a previously set first laser dose translation of the first relative laser intensity to a second laser dose translation of the second relative laser intensity. The proportional adjustment is such that a respective effective exposed laser dose of each pixel is achieved by the second laser dose translation of the respective second relative laser intensity which is equal to a respective effective exposed laser dose of each pixel that would have resulted from the first laser dose translation of the respective first relative laser intensity. The respective relative laser intensity of an edge pixel of the at least one edge pixel or of a neighbouring pixel of the at least one neighbouring pixel is increased by a constant additive term from the respective second relative laser intensity to a respective third relative laser intensity.

A device, a computer program, a computer readable medium and a method setting respective relative laser intensities to a plurality of pixels representing a lithographic exposure. The plurality of pixels comprises at least one edge pixel arranged on an edge of an area of pixels to be exposed, and at least one neighbouring pixel. The at least one neighbouring pixel is arranged one pixel away from the at least one edge pixel in a perpendicular direction away from the edge towards the area of pixels to be exposed. The method comprises decreasing proportionally a relative laser intensity of each pixel of the plurality of pixels from a previously set respective first relative laser intensity to a respective second relative laser intensity. A laser dose translation of relative laser intensity of pixels proportionally adjusted from a previously set first laser dose translation of the first relative laser intensity to a second laser dose translation of the second relative laser intensity. The proportional adjustment is such that a respective effective exposed laser dose of each pixel is achieved by the second laser dose translation of the respective second relative laser intensity which is equal to a respective effective exposed laser dose of each pixel that would have resulted from the first laser dose translation of the respective first relative laser intensity. The respective relative laser intensity of an edge pixel of the at least one edge pixel or of a neighbouring pixel of the at least one neighbouring pixel is increased by a constant additive term from the respective second relative laser intensity to a respective third relative laser intensity.

A photo mask for an extreme ultraviolet (EUV) lithography includes a circuit pattern, and sub-resolution assist patterns disposed around and connected to the circuit pattern. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 50 nm.