A method of operating a wet process apparatus, includes dispensing a solution from a nozzle and directing the solution to a bath through an inlet port. A purge gas is injected into the bath to force flow of the solution from the bath to a buffer tank. A condition of the fluid within the buffer tank is monitored with a sensor. The solution is circulated to a pump and then through a filter before returning the solution to the nozzle. Overflow solution is directed out of the bath via an overflow path to a drain for preventing an overflow condition.

An object is to provide a mask blank

A mask blank having a substrate and a thin film, the substrate includes two main surfaces and a side surface with a chamfered surface provided between the two main surfaces and the side surface, one main surface of the two main surfaces includes an inner region including a center of the main surface and an outer peripheral region outside of the inner region, the thin film is provided on the inner region of the main surface, the surface reflectance Rs of the outer peripheral region with respect to light of 400 nm to 700 nm wavelength is 10% or less, and provided that Rf is the surface reflectance with respect to light of 400 nm to 700 nm wavelength in one section among sections of the thin film in the range of 9 nm to 10 nm film thickness, the contrast ratio (Rf/Rs) is 3.0 or more.

An object is to provide a mask blank

A mask blank having a substrate and a thin film, the substrate includes two main surfaces and a side surface with a chamfered surface provided between the two main surfaces and the side surface, one main surface of the two main surfaces includes an inner region including a center of the main surface and an outer peripheral region outside of the inner region, the thin film is provided on the inner region of the main surface, the surface reflectance Rs of the outer peripheral region with respect to light of 400 nm to 700 nm wavelength is 10% or less, and provided that Rf is the surface reflectance with respect to light of 400 nm to 700 nm wavelength in one section among sections of the thin film in the range of 9 nm to 10 nm film thickness, the contrast ratio (Rf/Rs) is 3.0 or more.

A meta-optical device and a method of manufacturing a metasurface are provided. The meta-optical device includes a substrate and a nanostructure, wherein the nanostructure includes a first portion and a second portion that differ in at least one of a diameter and a period, wherein a ratio of an etch depth of the second portion to an etch depth of the first portion is about 0.9 to about 1.1, and the nanostructure includes at least one of sulfur, fluorine, and fluorocarbon.

A meta-optical device and a method of manufacturing a metasurface are provided. The meta-optical device includes a substrate and a nanostructure, wherein the nanostructure includes a first portion and a second portion that differ in at least one of a diameter and a period, wherein a ratio of an etch depth of the second portion to an etch depth of the first portion is about 0.9 to about 1.1, and the nanostructure includes at least one of sulfur, fluorine, and fluorocarbon.

A method of manufacturing a template including a mesa on a second side is disclosed. The method can include depositing a first coating on the second side, depositing a photocurable material over a top of the mesa, contacting the photocurable material with a second surface to cause the photocurable material to cover the top surface of the mesa and at least a portion of a side of the mesa, curing the photocurable material to form a cured film on the top surface and to form a cured extrusion on at least a portion of the side surface, the cured extrusion is thicker than the cured film, etching the top surface of the mesa to remove the first coating and the cured film from the top surface, and removing the cured extrusion to form the template with the first coating on the side surface.

A method of manufacturing a template including a mesa on a second side is disclosed. The method can include depositing a first coating on the second side, depositing a photocurable material over a top of the mesa, contacting the photocurable material with a second surface to cause the photocurable material to cover the top surface of the mesa and at least a portion of a side of the mesa, curing the photocurable material to form a cured film on the top surface and to form a cured extrusion on at least a portion of the side surface, the cured extrusion is thicker than the cured film, etching the top surface of the mesa to remove the first coating and the cured film from the top surface, and removing the cured extrusion to form the template with the first coating on the side surface.

Provided is a method of high-density pattern forming, which includes: providing a substrate; forming a hard mask layer on the substrate; forming a sacrificial layer on the hard mask layer; forming photoresists arranged at intervals on the sacrificial layer; etching the sacrificial layer to enable the sacrificial layer to form a mandrel corresponding to the photoresist one by one, wherein a cross-sectional size of the mandrel gradually decreases from an end of the mandrel away from the hard mask layer to an end close to the hard mask layer; forming an isolation layer on the mandrel; removing the isolation layer on the top of the mandrel, the isolation layer covering the hard mask layer, and the mandrel to form an isolation sidewall pattern; and transferring the isolation sidewall pattern to the hard mask layer.

A photomask includes a substrate, a multilayer stack disposed over the substrate and configured to reflect a radiation, a capping layer over the multilayer stack, and an anti-reflective layer over the capping layer. The anti-reflective layer comprises a first pattern, wherein the first pattern exposes the capping layer and is configured as a printable feature. The photomask also includes an absorber spaced apart from the printable feature from a top-view perspective.

A photomask includes a substrate, a multilayer stack disposed over the substrate and configured to reflect a radiation, a capping layer over the multilayer stack, and an anti-reflective layer over the capping layer. The anti-reflective layer comprises a first pattern, wherein the first pattern exposes the capping layer and is configured as a printable feature. The photomask also includes an absorber spaced apart from the printable feature from a top-view perspective.