Computer implemented methods and computer program products have instructions for generating transfer functions that relate segments on lithography photomasks to features produced by photolithography and etching using such segments. Such methods may be characterized by the following elements: (a) receiving after development inspection metrology results produced from one or more first test substrates on which resist was applied and patterned using a set of design layout segments; (b) receiving after etch inspection metrology results produced from one or more second test substrates which were etched after resist was applied and patterned using said set of design layout segments; and (c) generating the transfer function using the set of design layout segments together with corresponding after development inspection metrology results and corresponding after etch inspection metrology results.

Computer implemented methods and computer program products have instructions for generating transfer functions that relate segments on lithography photomasks to features produced by photolithography and etching using such segments. Such methods may be characterized by the following elements: (a) receiving after development inspection metrology results produced from one or more first test substrates on which resist was applied and patterned using a set of design layout segments; (b) receiving after etch inspection metrology results produced from one or more second test substrates which were etched after resist was applied and patterned using said set of design layout segments; and (c) generating the transfer function using the set of design layout segments together with corresponding after development inspection metrology results and corresponding after etch inspection metrology results.

Disclosed is a substrate treating apparatus including a support unit that supports and rotates a substrate, a heating unit including a laser irradiator that irradiates laser light in a pattern formed in the substrate, a movement module that changes a location of the laser irradiator by moving the heating unit, and a controller that controls the support unit and the heating unit, the movement module moves the heating unit between a heating location, at which the laser light is irradiated to the substrate, and a standby location that deviates from the substrate, and the movement module rotates and linearly moves the heating unit.

The present disclosure relates to lithographic masks and, more particularly, to a lithographic mask substrate structure and methods of manufacture. The mask includes a sub-resolution assist feature (SRAF) formed on a quartz substrate and composed of a patterned transition film and absorber layer.

Disclosed are methods of generating a proximity-corrected design layout for photoresist to be used in an etch operation. The methods may include identifying a feature in an initial design layout, and estimating one or more quantities characteristic of an in-feature plasma flux (IFPF) within the feature during the etch operation. The methods may further include estimating a quantity characteristic of an edge placement error (EPE) of the feature by comparing the one or more quantities characteristic of the IFPF to those in a look-up table (LUT, and/or through application of a multivariate model trained on the LUT, e.g., constructed through machine learning methods (MLM)) which associates values of the quantity characteristic of EPE with values of the one or more quantities characteristics of the IFPF. Thereafter, the initial design layout may be modified based on at the determined quantity characteristic of EPE.

A method of calculating a form according to an embodiment relates to a method of calculating a processed depth of a material to be etched when the material to be etched is etched using a mask material. The method comprises calculating a first opening solid angle Ω1 based on an opening of a mask pattern, the first opening solid angle Ω1 defining an incident quantity of ions contributing to etching, and calculating a second opening solid angle Ω2 based on an opening of a mask pattern, the second opening solid angle Ω2 defining an incident quantity of depositions. A processed depth at a process point where the material to be etched is etched is calculated based on a linear equation using the first opening solid angle Ω1 and the second opening solid angle Ω2 as variables.

The present invention provides a transfer film in which a pattern appearance defect is unlikely to occur, a manufacturing method for a laminate, a manufacturing method for a circuit wire, and a manufacturing method for an electronic device. The transfer film of the present invention includes a temporary support a resin composition layer disposed on the temporary support, in which the resin composition layer contains a resin, and at least one compound selected from the group consisting of a block copolymer, which contains a block consisting of a constitutional unit X having a group represented by Formula (A) or a group represented by Formula (B) and a block a constitutional unit Y having a poly(oxyalkylene) group, and a compound represented by Formula (1).

The present invention provides a transfer film in which a pattern appearance defect is unlikely to occur, a manufacturing method for a laminate, a manufacturing method for a circuit wire, and a manufacturing method for an electronic device. The transfer film of the present invention includes a temporary support a resin composition layer disposed on the temporary support, in which the resin composition layer contains a resin, and at least one compound selected from the group consisting of a block copolymer, which contains a block consisting of a constitutional unit X having a group represented by Formula (A) or a group represented by Formula (B) and a block a constitutional unit Y having a poly(oxyalkylene) group, and a compound represented by Formula (1).

The present invention relates to a method for manufacturing a conductive mesh pattern, a mesh electrode manufactured by the same, and a laminate.

The present invention relates to a method for manufacturing a conductive mesh pattern, a mesh electrode manufactured by the same, and a laminate.