This manufacturing method of a metal component enables precision processing of a corner portion, and the radius of curvature of a cog tip of a gear and the like can be made smaller than before. The manufacturing method of a metal component includes: (a) forming a mask film having, in plan view, a first side, a second side, and an extension portion that extends from a region between the first side and the second side on a metal film; and (b) forming a corner portion having, in plan view, a third side and a fourth side by etching the metal film.

A resist underlayer film material contains (A) a resin having a compound shown in the following general formula (1A), and (B) an organic solvent. Mw/Mn of the compound shown in the general formula (1A) is 1.00≤Mw/Mn≤1.25. This provides: a resist underlayer film material having all of favorable dry etching resistance, heat resistance to 500° C. or higher, and high filling and planarizing properties; and methods for forming a resist underlayer film and patterning processes which use the material.

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To provide an alcohol compound containing fewer impurities at a high yield by conducting the following steps: a hydroboration process in which a reaction mixture is obtained by reacting in a solvent a compound represented by formula (C) and a boron agent selected from a group of diborane and borane complexes; and an oxidation process in which the pH of the reaction mixture is set at 0.5 to 4, which is conducted after treating the reaction mixture with hydrogen peroxide. In the formula, A.sub.1 to A.sub.6 are each independently a hydrogen atom, methyl group or ethyl group, and X is an oxygen atom, sulfur atom, methylene group or ethylene group. ##STR00001##

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

The present invention provides a treatment liquid excellent in resolution, a property of suppressing reduction in film thickness, and a property of suppressing residues, in a case of being used for at least one of developing or washing a resist film. Further, the present invention provides a pattern forming method for the above-described treatment liquid. The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for performing at least one of development or washing after exposure on a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, the treatment liquid including a first organic solvent that satisfies a predetermined condition and a second organic solvent that satisfies a predetermined condition.

Provided is a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes forming a target etching layer on a substrate, patterning the target etching layer to form a pattern layer including a pattern portion having a first height and a first width and a recess portion having a second width, providing a first gas and a second gas on the pattern layer, and performing a reaction process including reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer. The performing the reaction process includes removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width.

A hard-mask forming composition, which is used for forming a hard mask used in lithography, including a first resin and a second resin, in which an amount of carbon contained in the first resin is 85% by mass or more with respect to the total mass of all elements constituting the first resin, and the amount of carbon contained in the second resin is 70% by mass or more with respect to the total mass of all elements constituting the second resin and less than the amount of carbon contained in the first resin.

A method for etching a light absorbing material permits directly writing a pattern of etching of silicon nitride and other light absorbing materials, without the need of a lithographic mask, and allows the creation of etched features of less than one micron in size. The method can be used for etching deposited silicon nitride films, freestanding silicon nitride membranes, and other light absorbing materials, with control over the thickness achieved by optical feedback. The etching is promoted by solvents including electron donor species, such as chloride ions. The method provides the ability to etch silicon nitride and other light absorbing materials, with fine spatial and etch rate control, in mild conditions, including in a biocompatible environment. The method can be used to create nanopores and nanopore arrays.

The present invention provides an imprint apparatus for forming a pattern in an imprint material on a substrate using an original, comprising: an image capturing unit configured to capture an image of the substrate; and a processor configured to perform, based on fine-detection marks and rough-detection marks in the image obtained by the image capturing unit, an alignment process of the original and the substrate in forming the pattern in the imprint material, and overlay inspection of the substrate and the pattern formed in the imprint material, wherein the processor is configured to change, between the alignment process and the overlay inspection, a rough-detection mark group to be used to specify positions of fine-detection marks in the image obtained by the image capturing unit.

A display substrate, a method for preparing the same and a display device are provided. The method for preparing the display substrate includes: providing a base substrate, in which the base substrate includes a first region and a second region; forming a first structure in the first region using a first mask and a first photoresist; forming a functional material layer at a side, which is away from the base substrate, of the first structure; and patterning the functional material layer using a second mask and the first mask to form a functional layer in the second region.