G03F7/0045

Siloxane polymer containing isocyanuric acid and polyether skeletons, photosensitive resin composition, pattern forming process, and fabrication of opto-semiconductor device

A siloxane polymer comprising polysiloxane, silphenylene, isocyanuric acid, and polyether skeletons in a backbone and having an epoxy group in a side chain is provided. A photosensitive resin composition comprising the siloxane polymer and a photoacid generator is coated to form a film which can be patterned using radiation of widely varying wavelength. The patterned film has high transparency and light resistance.

Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method

The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: ##STR00001## wherein R.sup.1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R.sup.2 to R.sup.5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R.sup.2 to R.sup.5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m.sup.2 and m.sup.3 are each independently an integer of 0 to 8; m.sup.4 and m.sup.5 are each independently an integer of 0 to 9, provided that m.sup.2, m.sup.3, m.sup.4, and m.sup.5 are not 0 at the same time; n is an integer of 1 to 4; and p.sup.2 to p.sup.5 are each independently an integer of 0 to 2.

Positive-type photosensitive resin composition
11592743 · 2023-02-28 · ·

A positive-type photosensitive resin composition comprises a (a) polybenzoxazole precursor, a (b) crosslinking agent, a (c) photosensitive agent, and a (d) solvent, wherein the (a) component comprises a structural unit represented by Formula (1) below, and the (b) component is a compound represented by Formula (2) below. In Formula (1), U is a bivalent organic group, a single bond, —O—, or —SO.sub.2—, V is a group comprising an aliphatic structure, and the carbon number in the aliphatic structure is 1 to 30. In Formula (2), R.sub.1 is independently a hydrogen atom or a group represented by —CH.sub.2—O—R.sub.2. At least one of the plurality of R.sub.1s is a group represented by —CH.sub.2—O—R.sub.2. R.sub.2 is independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. ##STR00001##

Method for measuring distance of diffusion of curing catalyst

A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.

Lithographic Patterning Process and Resists to Use Therein

A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX.sub.3, A.sub.2BX.sub.4, or ABX.sub.4, wherein A is a compound containing an NH.sub.3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.

SILICONE SKELETON-CONTAINING POLYMER, PHOTO-CURABLE RESIN COMPOSITION, PHOTO-CURABLE DRY FILM, LAMINATE, AND PATTERNING PROCESS

The present invention provides a silicone skeleton-containing polymer including a silicone skeleton shown by the following formula (1) and having a weight average molecular weight of 3,000 to 500,000.

##STR00001##

This can provide a silicone skeleton-containing polymer that can easily form a fine pattern with a large film thickness, and can form a cured material layer (cured film) that is excellent in various film properties such as crack resistance and adhesion properties to a substrate, electronic parts, and a semiconductor device, particularly a base material used for a circuit board, and has high reliability as a film to protect electric and electronic parts and a film for bonding substrates; and a photo-curable resin composition that contains the polymer, a photo-curable dry film thereof, a laminate using these materials, and a patterning process.

LATENT ACIDS AND THEIR USE

Compounds of the formula (I) and (IA) wherein X is —O(CO)—; R.sub.1 is C.sub.1-C.sub.12haloalkyl or C.sub.6-C.sub.10haloaryl; R.sub.2 is located in position 7 of the coumarinyl ring and is OR.sub.8; R.sub.2a, R.sub.2b and R.sub.2C independently of each other are hydrogen; R.sub.3 is C.sub.1-C.sub.8haloalkyl or C.sub.1-C.sub.8haloalkyl; R.sub.4 is hydrogen; and R.sub.8 is C.sub.1-C.sub.6alkyI; are suitable as photosensitive acid donors in the preparation of photoresist compositions such as used for example in the preparation of spacers, insulating layers, interlayer dielectric films, insulation layers, planarization layers, protecting layers, overcoat layers, banks for electroluminescence displays and liquid crystal displays (LCD).

##STR00001##

Resist composition and method of forming resist pattern

A resist composition including: a compound including an anion moiety and a cation moiety and represented by the following Formula (bd1); and an organic solvent having a hydroxyl group in which Rx.sup.1 to Rx.sup.4 each represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; Ry.sup.1 and Ry.sup.2 each independently represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; Rz.sup.1 to Rz.sup.4 each represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; at least one of Rx.sup.1 to Rx.sup.4, Ry.sup.1 and Ry.sup.2 and Rz.sup.1 to Rz.sup.4 has an anionic group; and M.sup.m+ represents an organic cation) ##STR00001##

Resist composition and pattern forming process

A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2). ##STR00001##

SULFONIC ACID DERIVATIVE, PHOTOACID GENERATOR USING SAME, RESIST COMPOSITION, AND DEVICE MANUFACTURING METHOD

A sulfonic acid derivative, wherein the sulfonic acid derivative is represented by the following general formula (1):


R.sup.1COOCH.sub.2CH.sub.2CFHCF.sub.2SO.sub.3.sup.−M.sup.+  (1)

where: R.sup.1 represents a monovalent organic group having carbon number of 1 to 200, having at least one hydroxyl group and optionally having a substituent other than the hydroxyl group; and M.sup.+ represents a counter cation.