The present invention is a resist material containing a quencher, where the quencher contains a sulfonium salt of a carboxylic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop a quencher that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. An object of the present invention is to provide: a resist material having high sensitivity, low LWR, and low CDU in both a positive resist material and a negative resist material; and a patterning process using the same.

Novel photoresist additive compositions including developer solubility groups which enhance the solubility of the photoresist additive in a developer, such as a TMAH developer. The novel photoresist additive compositions also include functional groups to address outgassing and out-of-band issues.

A radiation-sensitive resin composition includes: a polymer which has a first structural unit including a phenolic hydroxyl group, and a second structural unit represented by formula (1); and a radiation-sensitive acid generating agent which has a compound represented by formula (2). R.sup.1 represents a hydrogen atom, or the like; R.sup.2 represents a hydrogen atom or the like; and R.sup.3 represents a divalent monocyclic alicyclic hydrocarbon group having 3 to 12 ring atoms. Ar.sup.1 represents a group obtained by removing (q+1) hydrogen atoms on an aromatic ring from an arene formed by condensation of at least two benzene rings; R.sup.4 represents a monovalent organic group having 1 to 20 carbon atoms; q is an integer of 0 to 7; and R.sup.5 represents a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms, or the like.

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A chemically amplified photosensitive composition capable of forming a template for plating which can form a plated article with uniform dimensions by photolithography method; a photosensitive dry film including a photosensitive layer consisting of this chemically amplified photosensitive composition; a production method of a substrate having a template for plating using the aforementioned chemically amplified photosensitive composition; and a production method of a plated article using the substrate having the template formed by the aforementioned method. A coumarin compound is blended into a chemically amplified photosensitive composition containing an acid generator which generates an acid by irradiation of active rays or radioactive rays.

A radiation sensitive composition including a siloxane polymer exhibiting phenoplast crosslinking reactivity as a base resin, which is excellent in resolution and can be used as a radiation sensitive composition capable of allowing a pattern having a desired-shape to be formed with sufficient precision. A radiation sensitive composition including as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof; and a photoacid generator, in which the hydrolyzable silane includes hydrolyzable silanes of Formula (1)
R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4-(a+b)  Formula (1)
wherein R.sup.1 is an organic group of Formula (1-2) ##STR00001##
and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R.sup.3 is a hydrolyzable group; and Formula (2)
R.sup.7.sub.cR.sup.8.sub.dSi(R.sup.9).sub.4-(c+d)  Formula (2)
wherein R.sup.7 is an organic group of Formula (2-1) ##STR00002##
and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R.sup.9 is a hydrolyzable group.

A photoacid generator (PAG) anion, a photoresist composition, and a method are disclosed. The PAG anion includes a moiety, selected from an alkyl group, a monocyclic aromatic group, and a bicyclic aromatic group, that includes a carbon atom with a negative elementary charge. The PAG anion also includes an electron acceptor atom, selected from boron(III), aluminum(III), and phosphorus(V), which is covalently bonded to the carbon atom. The PAG anion also has at least one electron-withdrawing R group. The photoresist composition has a PAG that includes the PAG anion and a cation selected from triphenylsulfonium, diphenyliodonium, phenylthiolanium, and derivatives thereof. The method includes forming a layer of the photoresist composition over a material surface on a substrate, irradiating the layer to form a pattern of radiation-exposed regions, selectively removing portions of the irradiated layer to form exposed portions of the material surface, and etching or ion implanting the exposed portions.

A novel onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in exposure latitude, MEF, and LWR. ##STR00001##

Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more,
A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)  Formula(1) Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

A resist composition including a compound represented by formula (bd1), a total amount of the acid-generator component and the basic component being 20 to 70 parts by weight, relative to 100 parts by weight of the base material component. In the formula, Rx.sup.1 to Rx.sup.4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rx.sup.1 to Rx.sup.4 may be mutually bonded to form a ring structure; Ry.sup.1 and Ry.sup.2 represents a hydrogen atom or a hydrocarbon group, or Ry.sup.1 and Ry.sup.2 may be mutually bonded to form a ring structure; Rz.sup.1 to Rz.sup.4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rz.sup.1 to Rz.sup.4 may be mutually bonded to form a ring structure; provided that at least one of Rx.sup.1 to Rx.sup.4, Ry.sup.1, Ry.sup.2 and Rz.sup.1 to Rz.sup.4 has an anionic group; and M.sup.m+ represents an m-valent organic cation). ##STR00001##