A resist composition including: a base material component (A), a compound (B1) represented by Formula (b1-1), and a fluorine additive component (F) which contains a fluororesin component (F1) having a constitutional unit (f1) represented by Formula (f-1) and a constitutional unit (f2) represented by Formula (f-2); in Formula (b1-1), V.sup.b01 represents a fluorinated alkylene group, R.sup.b02 represents a fluorine atom or a hydrogen atom, a total number of fluorine atoms as V.sup.b01 and R.sup.b02 is 2 or 3; in Formula (f-1), Rf.sup.1 represents a monovalent organic group having a fluorine atom; in Formula (f-2), Rf.sup.2 represents a group represented by Formula (f2-r-1), which is a group containing a polycyclic aliphatic cyclic group. ##STR00001##

A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: ##STR00001##
The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.

A fluorocarboxylic acid-containing polymer comprising recurring units having formula (A1), but not acid labile group-containing recurring units is provided. A resist composition comprising the same offers a high sensitivity and is unsusceptible to nano-bridging or pattern collapse independent of whether it is of positive or negative tone. ##STR00001##

A sulfonium salt represented by a following general formula (1),

##STR00001##

wherein in the general formula (1), each of R.sup.1 to R.sup.3 is independently an alkyl group, an aryl group, or a heteroaryl group;

at least one carbon-carbon single bond contained in the alkyl group is optionally substituted with a carbon-carbon double bond or a carbon-carbon triple bond;

at least one methylene group contained in the alkyl group is optionally substituted with at least one divalent heteroatom-containing group;

Ar.sup.1 is an arylene group;

at least one of R.sup.1, R.sup.2, R.sup.3 and Ar.sup.1 has at least one substituent (R);

at least two of R.sup.1 to R.sup.3, Ar.sup.1, and substituent (R) optionally form a ring;

A is a divalent group selected from a group consisting of —S—, —SO—, and —SO.sub.2—;

Ar.sup.1 is substituted with A at an ortho-position with respect to a sulfonio group (S.sup.+); and

X.sup.− is an anion.

An EO/PO modified 9-phenylacridine photosensitizer having the structure as shown in general formula (I). When the photosensitizer is applied to a photosensitive resin composition, the composition has characteristics of high photosensitivity, high resolution, high solubility, excellent dispersion stability, and excellent developing property, and has good hydrophilicity during development, the amount of sludges in a developer during recycling can be significantly reduced, so that the developer can be used repeatedly and effectively.

##STR00001##

Provided are a photosensitive coloring composition including a pigment and a diketopyrrolopyrrole compound A represented by Formula 1, in which, in a case where molar contents of the diketopyrrolopyrrole compound A and a diketopyrrolopyrrole compound B represented by Formula 1 are each denoted by m.sup.A and m.sup.B, a value of m.sup.A/(m.sup.A+m.sup.B) is 10 mol % to 100 mol %, and a content of the pigment is 35% by mass or more with respect to a total solid content of the photosensitive coloring composition; a cured substance of the photosensitive coloring composition, a color filter including the cured substance, a solid-state imaging element or an image display device, and a novel asymmetric diketopyrrolopyrrole compound.

Diketopyrrolopyrrole compound A: A.sup.1 represents a monovalent organic group having an acidic or a basic functional group, and B.sup.1 represents a monovalent organic group not having an acidic or a basic functional group.

Diketopyrrolopyrrole compound B: A.sup.1 and B.sup.1 represent monovalent organic groups having an acidic or a basic functional group.

##STR00001##

The present invention is a positive resist material containing: an acid generator being a sulfonium salt of a sulfonate ion bonded to a polymer main chain; and a quencher being a sulfonium salt shown by the following general formula (1). R.sup.1 represents a fluorine atom, phenyl group, phenyloxycarbonyl group, alkyl group, alkoxy group, alkenyl group, alkynyl group, or alkoxycarbonyl group. Hydrogen atoms of these groups are optionally substituted. R.sup.2 to R.sup.4 each independently represent a halogen atom or hydrocarbyl group. R.sup.2 and R.sup.3, or R.sup.2 and R.sup.4, are optionally bonded with each other to form a ring with a sulfur atom that is bonded thereto. Thus, the present invention provides: a positive resist material having higher sensitivity than conventional positive resist materials, and having little edge roughness (LWR) and dimensional variation (CDU) in an exposure pattern; and a patterning process using the positive resist material.

##STR00001##

A resist composition comprising a polymer is provided, the polymer comprising repeat units derived from a sulfonium or iodonium salt having a nitro-substituted benzene ring in a linker between a polymerizable unsaturated bond and a fluorosulfonic acid site. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A negative working, aqueous base developable, photosensitive photoresist composition and a process of using this composition to produce lithographic images, where this composition is one comprising: a) a polymer containing the four repeat units of structures (1), (2), (3), and (4), but no other types of repeat units; wherein v, x, y and z, respectively, represent the mole % of each repeat units of structures (1), (2), (3) and (4); b) a radical photo-initiator component, which is comprised of at least one radical photo initiator which is activated by a broad absorption of radiation from about 360 nm to about 440 nm; c) a crosslinker component which is either a mixture consisting of crosslinkers of structure (5), (6) and (7), or a single crosslinker of structure (8); d) a radical inhibitor component; e) an optional surfactant component; f) an optional dissolution promoter component; and g) a solvent. The invention also relates to the process of using this negative resist to produce lithographic images. ##STR00001##

A resist underlayer composition and a method of forming patterns using a resist underlayer composition, the resist underlayer composition including a polymer, the polymer including a structural unit that is a reaction product of an isocyanurate compound, the isocyanurate compound having at least one thiol group thereon, and a solvent.