The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, and can be provided with a variety of required functions without constraint.

The present application relates to a monomer, a method for preparing a block copolymer, a block copolymer, and uses thereof. Each monomer of the present application exhibits an excellent self-assembling property and is capable of forming a block copolymer to which a variety of required functions are granted as necessary without constraint.

A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers under such illumination that the quantity of light of wavelength up to 400 nm is up to 0.05 mW/cm.sup.2. The polymer avoids photo-decomposition of the acid generator during polymerization and concomitant deprotection reaction of the acid labile group when used in positive resist compositions. A pattern with high dissolution contrast and rectangularity is formed after development.

A monomer having a substituent group capable of polarity switch under the action of acid is provided. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high resolution and etch resistance which is insoluble in alkaline developer.

The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate; performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The photoresist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, a first sensitizer that is bonded to the polymer backbone, a second sensitizer that is not bonded to the polymer backbone, and a photo-acid generator (PAG).

A photoresist composition comprising an acid generator and a resin comprising a structural unit derived from a monomer represented by the formula (1): ##STR00001## wherein R.sup.1 represents a hydrogen atom etc., R.sup.2 represents a hydrogen atom or a C1-C4 alkyl group, A.sup.1 represents a single bond etc., and B.sup.1 represents a group represented by the formula (1a): ##STR00002## wherein R.sup.3, R.sup.4 and R.sup.5 each independently represents a C1-C16 aliphatic hydrocarbon group and R.sup.4 and R.sup.5 can be bonded each other to form a C3-C18 ring together with the carbon atom to which R.sup.4 and R.sup.5 are bonded, a C4-C20 saturated cyclic group having a lactone structure or a C5-C20 saturated cyclic hydrocarbon group having at least one hydroxyl group.

A resin comprising: a structural unit represented by formula (I), and a structural unit having an acid-labile group. ##STR00001##

A method of patterning a device is disclosed using a resist precursor structure having at least two fluoropolymer layers. A first fluoropolymer layer includes a first fluoropolymer material having a fluorine content of at least 50% by weight and is substantially soluble in a first hydrofluoroether solvent or in a first perfluorinated solvent, but substantially less soluble in a second hydrofluoroether solvent relative to both the first hydrofluoroether and the first perfluorinated solvent. The second fluoropolymer layer includes a second fluoropolymer material having a fluorine content less than that of the first fluoropolymer material and is substantially soluble in the first or second hydrofluoroether solvents, but substantially less soluble in the first perfluorinated solvent relative to both the first and second hydrofluoroether solvents.

A method of patterning an organic device includes depositing a first organic functional layer over a device substrate to form a first intermediate structure, the first organic functional layer having a first function such as hole transport or electron transport. The first intermediate structure is coated with a fluoropolymer and treated in a processing agent comprising a fluorinated solvent in which the fluoropolymer is soluble to form a processed intermediate structure. A second organic functional layer is deposited over at least a portion of the first organic functional layer, the second organic functional layer also having the first function.

A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.