G03F7/0046

Resist composition and method for forming resist pattern

A resist composition containing a resin component having a structural unit represented by general formula (a0-1), and a compound represented by general formula (b1). In general formula (a0-1), R is a hydrogen atom, an alkyl group, or a halogenated alkyl group, Va.sup.1 is a divalent hydrocarbon group, n.sub.a1 represents an integer of 0 to 2, Ya.sup.0 is a carbon atom, Xa.sup.0 is a group forming a monocyclic aliphatic hydrocarbon group together with Ya.sup.0, and Ra.sup.00 is an aromatic hydrocarbon group or a specific unsaturated hydrocarbon group. In general formula (b1), R.sup.b1 represents a cyclic hydrocarbon group, Y.sup.b1 represents a divalent linking group containing an ester bond, V.sup.b1 represents an alkylene group, a fluorinated alkylene group, or a single bond, and M.sup.m+ is an m-valent organic cation. ##STR00001##

RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD

A radiation-sensitive resin composition includes: a first polymer having a first structural unit which includes a phenolic hydroxyl group, and a second structural unit which includes an acid-labile group and a carboxy group which is protected by the acid-labile group; a second polymer having a third structural unit represented by the following formula (S-1), and a fourth structural unit which is a structural unit other than the third structural unit and is represented by the following formula (S-2); and a radiation-sensitive acid generator, wherein the acid-labile group includes a monocyclic or polycyclic ring structure having no fewer than 3 and no more than 20 ring atoms.

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RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD

A radiation-sensitive resin composition includes a polymer including a phenolic hydroxyl group, a compound represented by formula (1-1) or formula (1-2), and a compound represented by formula (2). In the formula (1-1), a sum of a, b, and c is no less than 1; at least one of R.sup.1, R.sup.2, and R.sup.3 represents a fluorine atom or the like; and R.sup.4 and R.sup.5 each independently represent a hydrogen atom, a fluorine atom, or the like. In the formula (1-2), in a case in which d is 1, R.sup.6 represents a fluorine atom or the like, and in a case in which d is no less than 2, at least one of the plurality of R.sup.6s represents a fluorine atom or the like; and R.sup.8 represents a single bond or a divalent organic group having 1 to 20 carbon atoms.

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COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN

Disclosed are a compound represented by formula (I), a resin and a resist composition:

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wherein R.sup.1 represents an alkyl group which may have a halogen atom, a hydrogen atom or a halogen atom; L.sup.1 represents a single bond or —CO—O*; R.sup.3 represents an alkyl group, and —CH.sub.2— included in the group may be replaced by —O— or —CO; R.sup.4 represents a fluorine atom, an alkyl fluoride group or an alkyl group, and —CH.sub.2—included in the alkyl fluoride group and the alkyl group may be replaced by —O— or —CO—; R.sup.5 represents a hydrogen atom, an alkylcarbonyl group or an acid-labile group; m2 and m3 represent an integer of 1 to 3, m4 represents an integer of 0 to 2, and m5 represents 1 or 2, in which 3≤m2+m3+m4+m5≤5.

SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN

A salt represented by formula (I):

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In formula (I), R.sup.1, R.sup.2, R.sup.3 and R.sup.4 each independently represent a halogen atom or a perfluoroalkyl group having 1 to 6 carbon atoms, R.sup.5, R.sup.6 and R.sup.7 each independently represent a halogen atom, a hydroxy group, a fluorinated alkyl group having 1 to 6 carbon atoms or an alkyl group having 1 to 12 carbon atoms, and —CH.sub.2— included in the alkyl group may be replaced by —O— or —CO—, m5 represents an integer of 0 to 3, m6 represents an integer of 0 to 3, m7 represents an integer of 0 to 3, R.sup.8 and R.sup.9 each independently represent a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, and —CH.sub.2— included in the alkyl group may be replaced by —O— or —CO—, and AI.sup.− represents an organic anion.

FLUORINATED ACRYLATE-BASED COPOLYMER AND PHOTOSENSITIVE RESIN COMPOSITION COMPRISING SAME
20220204671 · 2022-06-30 ·

The present invention relates to a fluorinated acrylate-based copolymer and to a photosensitive resin composition comprising the same. The copolymer can have excellent water repellency even with a relatively low content of fluorine by introducing a non-polar ring-containing unit, so that it can prevent coating imbalance and decreases in the pattern strength that may occur when the fluorine content is high.

ALCOHOL COMPOUND, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS

A chemically amplified negative resist composition comprising an alcohol compound of specific structure as a crosslinker has a high sensitivity and dissolution contrast and forms a pattern of good profile with reduced values of LER and CDU.

Salt, acid generator, resist composition and method for producing resist pattern

Disclosed is a salt represented by formula (I): ##STR00001##
wherein, in formula (I), Q.sup.1 and Q.sup.2 each independently represent a fluorine atom or the like, R.sup.1 and R.sup.2 each independently represent a hydrogen atom or the like, Z represents an integer of 0 to 6, X.sup.1 represents *—CO—O— or the like, where * represents a bonding site to C(R.sup.1)(R.sup.2) or C(Q.sup.1)(Q.sup.2), L.sup.1 represents a single bond or a saturated hydrocarbon group, and —CH.sub.2— included in the saturated hydrocarbon group may be replaced by —O—, —S—, —SO.sub.2— or —CO—, A.sup.1 represents a divalent alicyclic hydrocarbon group which may have a substituent, R.sup.a represents a cyclic hydrocarbon group which may have a substituent, and Z.sup.+ represents an organic cation.

THIN FILM RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME

[Problem] Providing a thick film resist composition capable of reducing environmental impact. [Means for Solution] A thick film resist composition comprising polymer (A), a deprotecting agent (B), a photoreaction quencher (C) composed of a certain cation and an anion, and a solvent (D).

POLYMER AND POSITIVE RESIST COMPOSITION
20220187708 · 2022-06-16 · ·

Provided is a polymer capable of forming a resist pattern in which pattern top loss is inhibited when used as a main chain scission-type positive resist. The polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, and the proportion of components having a molecular weight of 100,000 or more in the polymer is 10% or more. In general formula (I), X is a fluorine, chlorine, bromine, iodine, or astatine atom, and R.sup.1 is an organic group including 3 to 7 fluorine atoms. In general formula (II), R.sup.2 is a hydrogen atom, fluorine atom, unsubstituted alkyl group, or fluorine atom-substituted alkyl group, R.sup.3 is a hydrogen atom, unsubstituted alkyl group, or fluorine atom-substituted alkyl group, p and q are integers of 0 to 5, and p+q=5.

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