In one preferred embodiment, polymers are provided that comprise a structure of the following Formula (I): ##STR00001##
Photoresists that comprises such polymers also are provided.

The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The polishing pad includes a polyurea polishing layer and a polyurea matrix. The polyurea matrix has a soft phase and a hard phase. The soft phase is formed from soft segments and the hard phase is formed from diisocyanate hard segments and a curative agent. The soft segment areva copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix is cured with the curative agent and includes gas or liquid-filled polymeric microelements. The soft segments form a fluorine rich phase that concentrates adjacent the polymeric microelements and at the polishing layer during polishing. The polishing layer remains hydrophilic during polishing in shear conditions.

An actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a group represented by General Formula (1) and a compound that generates an acid upon irradiation with actinic rays or radiation. ##STR00001##

A compound represented by the formula (I): ##STR00001##

The present disclosure relates to novel multiple trigger monomer containing negative working photoresist compositions and processes. The processes involve removing acid-labile protecting groups from crosslinking functionalities in a first step and crosslinking the crosslinking functionality with an acid sensitive crosslinker in a second step. The incorporation of a multiple trigger pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution, resolution blur and exposure latitude. The photoresist compositions utilize novel monomers and mixtures of novel monomers. The methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.

The present invention is directed to a permanent photoimageable compositions and the cured products thereof useful for making negative-tone, permanent photoresist relief patterns on low surface energy polymer substrates, comprising: (A) one or more alkali soluble, film forming resins or one or more film forming resins that become soluble in alkali solutions by action of an acid, (B) one or more cationic photoinitiators, (C) one or more film casting solvents, and (D) one or more fluorinated compounds. The present invention is also directed to methods of forming a permanent photoresist relief pattern on a low surface energy polymer substrate using the disclosed compositions.

A resist composition containing a base material component (A) of which solubility in a developing solution is changed due to an action of an acid and a compound represented by Formula (bd1); in the formula, R.sup.bd1 to R.sup.bd3 each independently represent an aryl group which may have a substituent, provided that at least two of R.sup.bd1 to R.sup.bd3 are aryl groups having one or more fluorine atoms as substituents, and at least one of the fluorine atoms of the aryl group is bonded to a carbon atom adjacent to a carbon atom that is bonded to the sulfur atom in the formula, and the total number of the fluorine atoms is 4 or more; X.sup.− represents a counter anion. ##STR00001##

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodized or brominated aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.

Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.

Provided is a copolymer that can be favorably used as a main chain scission-type positive resist having excellent dry etching resistance. The copolymer includes a monomer unit (A) represented by formula (I), shown below, and a monomer unit (B) represented by formula (II), shown below, and has a weight-average molecular weight of 80,000 or more. In the formulae, L is a single bond or a divalent linking group, Ar is an optionally substituted aromatic ring group, R.sup.1 is an alkyl group, R.sup.2 is an alkyl group, a halogen atom, or a haloalkyl group, p is an integer of not less than 0 and not more than 5, and in a case in which more than one R.sup.2 is present, each R.sup.2 may be the same or different.

##STR00001##