G03F7/0046

Fluorine-containing polymer, purification method, and radiation-sensitive resin composition

An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).

Film-forming composition, film formed thereby, and method for manufacturing organic semiconductor element using same

A film-forming composition according to the present invention include fluororesin having a repeating unit of the general formula (1); and a fluorine-containing solvent. ##STR00001##
In the general formula (1), R.sup.1 each independently represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; and R.sup.2 each independently represents C.sub.1-C.sub.15 straight, C.sub.3-C.sub.15 branched or C.sub.3-C.sub.15cyclic fluorine-containing hydrocarbon gr which any hydrogen atom may be replaced by a fluorine atom with the proviso that the repeating unit contains at least one fluorine atom. This film-forming composition is suitably usable for the manufacturing of an organic semiconductor element because the composition can form a film on an organic semiconductor film; and the formed film has resistance to an etching solvent during the fine pattern processing of the organic semiconductor film by photolithography etc.

Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, method for manufacturing electronic device, and electronic device

An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (P) having a partial structure represented by General Formula (X), and a compound capable of generating an acid upon irradiation with actinic ray or radiation. ##STR00001##

Methods of forming patterns using photoresist polymers and methods of manufacturing semiconductor devices

A photoresist polymer includes a first repeating unit and a second repeating unit. The first repeating unit includes a fluorine leaving group that is configured to be removed by a photo-chemical reaction. The second repeating unit includes a silicon-containing leaving group that is configured to be removed by the fluorine leaving group when the fluorine leaving group is removed from the first repeating unit.

Resin, resist composition and method for producing resist pattern

Disclosed are a resin containing a structural unit represented by formula (I), a structural unit represented by formula (a1-1), a structural unit represented by formula (a1-2) and a structural unit represented by formula (a2-A), and a resist composition including the same: ##STR00001##

Flow cells

An example of a flow cell includes a substrate; a first primer set attached to a first region on the substrate, the first primer set including an un-cleavable first primer and a cleavable second primer; and a second primer set attached to a second region on the substrate, the second primer set including a cleavable first primer and an un-cleavable second primer.

EUV photoresist with low-activation-energy ligands or high-developer-solubility ligands

A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure: ##STR00001## The second ligands each have a following structure: ##STR00002##
custom character represents the core group. L′ represents a chemical that includes 0˜2 carbon atoms saturated by Hydrogen (H) or Fluorine (F). L represents a chemical that includes 1˜6 carbon atoms saturated by H or F. L″ represents a chemical that includes 1˜6 carbon atoms saturated by H. L′″ represents a chemical that includes 1˜6 carbon atoms saturated by H or F. Linker represents a chemical that links L″ and L′″ together.

Resist composition and method for producing resist pattern

Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator: ##STR00001##
wherein, in formula (I), R.sup.1 represents a halogen atom or an alkyl fluoride group having 1 to 6 carbon atoms, m1 represents an integer of 1 to 5, and when m1 is 2 or more, a plurality of R.sup.1 may be the same or different from each other.

POLY- OR PREPOLYMER COMPOSITION, OR EMBOSSING LACQUER COMPRISING SUCH A COMPOSITION AND USE THEREOF

Wth a prepolymer composition containing at least one mono or oligomer component with at least one polymerizable C—C double bond as well as at least one multifunctional monomer component, the multifunctional monomer component a multifunctional monomer component is contained with at least two thiol groups selected from the group: 3-Mercaptopropionates, 3-Mercaptoacetates, thioglycolates, and alkylthiols, wherein the mono or oligomer component with at least one polymerizable double bond is selected from the group acrylates, methyl acrylates, vinyl ethers, allyl ethers, propenyl ethers, alkenes, dienes, unsaturated esters, allyl triazines, allyl isocyanates, and N-vinyl amides, and wherein at least one surface-active anti-adhesive additive selected from the group alkyl (meth)acrylates, polysiloxane (meth)acrylates, perfluoroalkyl (meth)acrylates, perfluoropolyether (meth)acrylates, alkyl vinyl ethers, polysiloxane vinyl ethers, perfluoroalkyl vinyl ethers, and perfluoropolyether vinyl ethers, as well as a photoinitiator are contained, as well as the use thereof.

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

Provided are an actinic ray-sensitive or radiation-sensitive resin composition including a compound (A) whose dissolution rate in an alkali developer decreases by the action of an acid, a resin (B) having a group that decomposes by the action of an alkali developer to increase the solubility in the alkali developer and having at least one of a fluorine atom or a silicon atom, and a resin (C) having a phenolic hydroxyl group, different from the resin (B), an actinic ray-sensitive or radiation-sensitive film and a mask blank, each formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.