Provided are a photosensitive resin composition including (A) a binder resin including a first binder resin and a second binder resin, (B) a photopolymerizable monomer, (C) a photopolymerization initiator, (D) a black inorganic pigment, (E) an inorganic scatterer, and (F) a solvent, wherein the first binder resin has a higher refractive index than the second binder resin, the first binder resin is included in an amount equal to or less than that of the second binder resin, and a primary particle diameter of the black inorganic pigment is less than or equal to 45 nm, a photosensitive resin layer using the same, and a display device including the photosensitive resin layer.

A semiconductor device and method of manufacturing a semiconductor device is disclosed herein including creating a photoresist mixture that includes a surfactant, and a base solvent; one or more boiling point modifying solvents having a boiling point higher in temperature than the base solvent; and one or more hydrophilicity modifying solvents that are more hydrophilic than the base solvent; depositing the photoresist mixture onto a substrate comprising a plurality of UBMLs using a wet film process; performing a pre-bake process to cure the photoresist; and patterning the photoresist.

A composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having a cyclic ester, cyclic carbonate or cyclic sulfonate structure, (B) a thermal acid generator, and (C) an organic solvent is suited to form a protective film between a substrate and a resist film. Even when a metal-containing resist film is used, the protective film is effective for preventing the substrate from metal contamination.

Provided is a novel composition for forming a resist underlayer film. This composition for forming a resist underlayer film includes a polymer (X) and a solvent, the polymer (X) containing: a plurality of structural units which are the same as or different from each other and have a methoxymethyl group and a ROCH2- group (R is a monovalent organic group, a hydrogen atom, or a mixture thereof) other than the methoxymethyl group; and a linking group that links the more than one structural unit.

A chemically amplified resist composition is provided comprising (A) a polymer P comprising repeat units having an acid labile group containing a fluorinated aromatic ring, repeat units having a phenolic hydroxy group, and repeat units adapted to generate an acid upon exposure, (B) an onium salt type quencher, and (C) a solvent. The resist composition exhibits a high sensitivity, low LWR and improved CDU when processed by photolithography.

A negative resist composition is provided comprising a base polymer, a quencher in the form of a sulfonium salt of a weaker acid than a sulfonic acid which is fluorinated at α- and/or β-position of the sulfo group, the sulfonium salt having at least two polymerizable double bonds in the molecule, and an acid generator capable of generating a sulfonic acid which is fluorinated at α- and/or β-position of the sulfo group. The resist composition adapted for organic solvent development exhibits a high resolution and improved LWR or CDU.

A negative resist composition is provided comprising a base polymer and an acid generator in the form of a sulfonium salt consisting of a sulfonate anion having a maleimide group and a cation having a polymerizable double bond. The resist composition adapted for organic solvent development exhibits a high resolution and improved LWR or CDU.

A chemically amplified resist composition comprising (A) a polymer adapted to increase its solubility in alkaline aqueous solution under the action of acid, (B) a photoacid generator capable of generating an acid upon exposure to KrF excimer laser, ArF excimer laser, EB or EUV, and (C) a quencher in the form of an amine compound of specific structure is provided. The resist composition has a high sensitivity and forms a pattern with a high resolution and improved LWR or CDU, independent of whether it is of positive or negative tone.

Provided are a near-infrared absorbing photosensitive composition including at least one oxocarbon compound selected from a compound represented by Formula (SQ1) or a compound represented by Formula (CR1), a polymerizable compound, a photopolymerization initiator, and a solvent; a cured film formed of the near-infrared absorbing photosensitive composition; an optical filter; a method for forming a pattern; a laminate; a solid-state imaging element; an image display device; and an infrared sensor. In Formula (SQ1), Rs.sup.1 and Rs.sup.2 each independently represent a monovalent organic group. In Formula (CR1), Rc.sup.1 and Rc.sup.2 each independently represent a monovalent organic group. ##STR00001##

A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1′); a resin including a structural unit having an acid-dissociable group; and a solvent. E.sup.A is a substituted or unsubstituted (α+β)-valent organic group having 1 to 40 carbon atoms; Z.sup.+ is a monovalent radiation-sensitive onium cation; and α and β are each independently 1 or 2.

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