A photosensitive resin composition for forming an interlayer insulating film, which contains an alkali-soluble resin (A), a photosensitizer (B), a thermal acid generator (T) which generates an acid when heated, and a silane coupling agent (C), and wherein the alkali-soluble resin (A) has a constituent unit (A1) represented by general formula (a-1) or an alicyclic epoxy group-containing unit (A3). In general formula (a-1), R represents a hydrogen atom or a methyl group; and Ra.sup.01 represents a hydrogen atom or an organic group having a hydroxyl group.

##STR00001##

A photosensitive resin composition for forming an interlayer insulating film, which contains an alkali-soluble resin (A), a photosensitizer (B), a thermal acid generator (T) which generates an acid when heated, and a silane coupling agent (C), and wherein the alkali-soluble resin (A) has a constituent unit (A1) represented by general formula (a-1) or an alicyclic epoxy group-containing unit (A3). In general formula (a-1), R represents a hydrogen atom or a methyl group; and Ra.sup.01 represents a hydrogen atom or an organic group having a hydroxyl group.

##STR00001##

The present invention provides a resin composition having a high sensitivity and serving to produce a cured film with a low water absorption rate. The resin composition includes: (a) an alkali-soluble resin and (b1) an amido-phenol compound containing a phenolic hydroxyl group in which a monovalent group as represented by the undermentioned general formula (1) is located at the ortho position and/or (b2) an aromatic amido acid compound containing a carboxy group in which a monovalent group as represented by the undermentioned general formula (2) is located at the ortho position: ##STR00001##
wherein in general formula (1), X is a monovalent organic group having an alkyl group that contains 2 to 20 carbon atoms and bonds directly to the carbonyl carbon in general formula (1) or a monovalent organic group that has —(YO).sub.n—; and in general formula (2), U is a monovalent organic group that has an alkyl group containing 2 to 20 carbon atoms and bonding directly to the amide nitrogen in general formula (2) or a monovalent organic group that has —(YO).sub.n—; wherein Y is an alkylene group containing 1 to 10 carbon atoms and n is an integer of 1 to 20.

The present invention relates to resist compositions comprising a polymer component, a photoacid generator component (PAG), a photoactive diazonaphthoquinone component (PAC), a base component, a solvent component, and optionally, a heterocyclic thiol component. The polymer component is a Novolak derivative, comprising Novolak repeat units with free phenolic hydroxy moieties, and Novolak repeat units comprising phenolic hydroxy moieties protected with an acid cleavable acetal moiety. The acetal moiety is elected from a mono functional alkyl acetal moiety protecting a repeat unit comprising a Novolak phenolic hydroxy moiety, an acetal, comprising a moiety functionalized with a PAC moiety, protecting a repeat unit comprising a Novolak phenolic hydroxy moiety; a di-functional acetal comprising moiety, linking and protecting two repeat units comprising Novolak phenolic hydroxy moieties, forming a linking point in said polymer component between two different polymer chains in said polymer component, and a mixture of any of these three types of acid cleavable acetal moieties. The PAC component is selected from said acetal, comprising a moiety functionalized with a PAC moiety, protecting a repeat unit comprising a Novolak phenolic hydroxy moiety, a free PAC component, and a mixture of these two types of PAC components. The present invention also relates to the methods of using the present compositions in either in thick or thin film photoresist device manufacturing methodologies.

The present invention is a resin composition including (a) a resin, (b) an antioxidizing agent, and (d) a crosslinking agent, wherein the resin composition is characterized by the following: the resin (a) is formed of one or more kinds of resins selected from among polyimide precursor, polyamide, polyimide, polybenzoxazole, and copolymers thereof; and the crosslinking agent (d) includes a phenolic hydroxyl group in one molecule, and also includes a substituent group having a molecular weight of 40 or more at both ortho positions of the phenolic hydroxyl group. Provided is the resin composition by which obtained is a pattern-cured film that enables fine patterns to be obtained, that exhibits excellent in-plane pattern uniformity while being curable at a low temperature of 250° C. or less, and that retains high extensibility and high adhesion with metal wires even after a reliability evaluation which is an actual-use accelerated test.

Provided is a polymer that can be used as a base resin for a positive photosensitive resin composition and a negative photosensitive resin composition, wherein the positive photosensitive resin composition and the negative photosensitive resin composition are soluble in an aqueous alkaline solution, can form a fine pattern, can achieve high resolution, and have good mechanical properties even when they are cured at low temperature. Also provided are a positive photosensitive resin composition and a negative photosensitive resin composition using the polymer. The polymer is represented by general formulas (1) and/or (2): ##STR00001##
wherein T.sub.1 and T.sub.2 may be the same as, or different from, each other and represent any of —CO— and —SO.sub.2—; X.sub.1 is a tetravalent organic group; and l is 0 or 1; and X.sub.2 is a divalent organic group.

Provided is a polymer that can be used as a base resin for a positive photosensitive resin composition and a negative photosensitive resin composition, wherein the positive photosensitive resin composition and the negative photosensitive resin composition are soluble in an aqueous alkaline solution, can form a fine pattern, can achieve high resolution, and have good mechanical properties even when they are cured at low temperature. Also provided are a positive photosensitive resin composition and a negative photosensitive resin composition using the polymer. The polymer is represented by general formulas (1) and/or (2): ##STR00001##
wherein T.sub.1 and T.sub.2 may be the same as, or different from, each other and represent any of —CO— and —SO.sub.2—; X.sub.1 is a tetravalent organic group; and l is 0 or 1; and X.sub.2 is a divalent organic group.

The present disclosure relates to a photoresist composition, a method for preparing the same, and a patterning method. The photoresist composition includes: 1 wt % to 10 wt % of a photosensitizer; 10 wt % to 20 wt % of a phenolic resin; 0.1 wt % to 5.5 wt % of an additive; and 75 wt % to 88 wt % of a solvent, based on the total weight of the photoresist composition, in which the photosensitizer includes: 20 wt % to 70 wt % of a first photosensitive compound represented by formula (1), 20 wt % to 70 wt % of a second photosensitive compound represented by formula (2), and 1 wt % to 35 wt % of a third photosensitive compound represented by formula (3), based on the total weight of the photosensitizer. The photoresist composition of the present disclosure simultaneously guarantees high resolution and high sensitivity, and can meet actual production requirements.

The present disclosure relates to a photoresist composition, a method for preparing the same, and a patterning method. The photoresist composition includes: 1 wt % to 10 wt % of a photosensitizer; 10 wt % to 20 wt % of a phenolic resin; 0.1 wt % to 5.5 wt % of an additive; and 75 wt % to 88 wt % of a solvent, based on the total weight of the photoresist composition, in which the photosensitizer includes: 20 wt % to 70 wt % of a first photosensitive compound represented by formula (1), 20 wt % to 70 wt % of a second photosensitive compound represented by formula (2), and 1 wt % to 35 wt % of a third photosensitive compound represented by formula (3), based on the total weight of the photosensitizer. The photoresist composition of the present disclosure simultaneously guarantees high resolution and high sensitivity, and can meet actual production requirements.

The present invention provides a positive photosensitive resin composition having high light transmittance, high heat resistance, and excellent pattern processability. The present invention provides a positive photosensitive resin composition containing polysiloxane (A), a naphthoquinonediazide compound (B), and a solvent (C); in which the polysiloxane (A) has at least one structure selected from the following general formulae (1) to (3), and has at least one structure selected from the following general formulae (4) to (6); ##STR00001##
in which, in the general formulae (1) to (3), R.sup.4 represents a C.sub.2-C.sub.6 hydrocarbon group having an unsaturated double bond; R.sup.1 represents a single bond or a C.sub.1-C.sub.4 alkylene group; R.sup.2 in the general formula (2) represents a hydrogen atom or a C.sub.1-C.sub.4 alkyl group; and R.sup.3 in the general formula (3) represents an organic group; ##STR00002##
in which R.sup.2 in general formula (5) represents a hydrogen atom or a C.sub.1-C.sub.4 alkyl group; and R.sup.3 in the general formula (6) represents an organic group.