Patent classifications
G03F7/025
Wafer Bow Mitigation
A method of processing a substrate that includes: depositing first and second monomers over a substrate, the first monomer being a first type of monomer and the second monomer being a second type of monomer different from the first type of monomer; exposing the substrate to a first actinic radiation to induce a polymerization of the first and second monomers over the substrate, where, after the polymerization, the substrate has a bow with a first curvature; and exposing the substrate to a second actinic radiation to induce a rearrangement of the polymer, the rearrangement reducing the bow.
Wafer Bow Mitigation
A method of processing a substrate that includes: depositing first and second monomers over a substrate, the first monomer being a first type of monomer and the second monomer being a second type of monomer different from the first type of monomer; exposing the substrate to a first actinic radiation to induce a polymerization of the first and second monomers over the substrate, where, after the polymerization, the substrate has a bow with a first curvature; and exposing the substrate to a second actinic radiation to induce a rearrangement of the polymer, the rearrangement reducing the bow.
RESIN FORMULATIONS FOR POLYMER-DERIVED CERAMIC MATERIALS
This disclosure enables direct 3D printing of preceramic polymers, which can be converted to fully dense ceramics. Some variations provide a preceramic resin formulation comprising a molecule with two or more CX double bonds or CX triple bonds, wherein X is selected from C, S, N, or O, and wherein the molecule further comprises at least one non-carbon atom selected from Si, B, Al, Ti, Zn, P, Ge, S, N, or O; a photoinitiator; a free-radical inhibitor; and a 3D-printing resolution agent. The disclosed preceramic resin formulations can be 3D-printed using stereolithography into objects with complex shape. The polymeric objects may be directly converted to fully dense ceramics with properties that approach the theoretical maximum strength of the base materials. Low-cost structures are obtained that are lightweight, strong, and stiff, but stable in the presence of a high-temperature oxidizing environment.
Sulfonic acid derivative compounds as photoacid generators in resist applications
Novel photoacid generator compounds are provided. Photoresist compositions that include the novel photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.
Sulfonic acid derivative compounds as photoacid generators in resist applications
Novel photoacid generator compounds are provided. Photoresist compositions that include the novel photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.
CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD
A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid generating agent included in the generative component comprises a compound represented by the formula (B). R.sup.B3 and R.sup.B4 each independently represent a monovalent organic group, or taken together represent a cyclic structure together with the OCO. At least one of R.sup.B3 and R.sup.B4 comprises a halogen atom, a nitro group, a cyano group, a formyl group, a carbonyl group, a carboxy group, a sulfo group, a sulfonyl group or a combination thereof, or the cyclic structure having 4 to 30 ring atoms is a spiro cyclic structure, a fused cyclic structure or a bridged cyclic structure.
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CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD
A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid generating agent included in the generative component comprises a compound represented by the formula (B). R.sup.B3 and R.sup.B4 each independently represent a monovalent organic group, or taken together represent a cyclic structure together with the OCO. At least one of R.sup.B3 and R.sup.B4 comprises a halogen atom, a nitro group, a cyano group, a formyl group, a carbonyl group, a carboxy group, a sulfo group, a sulfonyl group or a combination thereof, or the cyclic structure having 4 to 30 ring atoms is a spiro cyclic structure, a fused cyclic structure or a bridged cyclic structure.
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METHOD FOR MANUFACTURING CURED FILM AND USE OF THE SAME
[Problem] To provide a method for manufacturing a cured film having high film density, high film hardness and high etching resistance.
[Means for Solution] A method for manufacturing a cured film comprising (1) applying a composition (i) above a substrate; (2) forming a hydrocarbon-containing film from the composition (i); and (3) irradiating the hydrocarbon-containing film with plasma, electron beam and/or ion to form a cured film. Use of the cured film.
Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process
The present invention is a compound for forming a metal-containing film, where the compound is represented by the following general formula (M), where R.sub.1 and R.sub.2 each independently represent an organic group or a halogen atom; and W represents a divalent organic group represented by the following general formula (W-1) or (W-2). This can provide: a compound for forming a metal-containing film having excellent dry etching resistance and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.
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Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process
The present invention is a compound for forming a metal-containing film, where the compound is represented by the following general formula (M), where R.sub.1 and R.sub.2 each independently represent an organic group or a halogen atom; and W represents a divalent organic group represented by the following general formula (W-1) or (W-2). This can provide: a compound for forming a metal-containing film having excellent dry etching resistance and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.
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