This disclosure enables direct 3D printing of preceramic polymers, which can be converted to fully dense ceramics. Some variations provide a preceramic resin formulation comprising a molecule with two or more CX double bonds or CX triple bonds, wherein X is selected from C, S, N, or O, and wherein the molecule further comprises at least one non-carbon atom selected from Si, B, Al, Ti, Zn, P, Ge, S, N, or O; a photoinitiator; a free-radical inhibitor; and a 3D-printing resolution agent. The disclosed preceramic resin formulations can be 3D-printed using stereolithography into objects with complex shape. The polymeric objects may be directly converted to fully dense ceramics with properties that approach the theoretical maximum strength of the base materials. Low-cost structures are obtained that are lightweight, strong, and stiff, but stable in the presence of a high-temperature oxidizing environment.

A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent,
WX).sub.n(1)
W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). n represents an integer of 1 to 10, ##STR00001##
The dotted line represents a bonding arm. R.sup.01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent,
WX).sub.n(1)
W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). n represents an integer of 1 to 10, ##STR00001##
The dotted line represents a bonding arm. R.sup.01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

This disclosure relates to dielectric film forming composition containing at least one fully imidized polyimide polymer; at least one inorganic filler; at least one metal-containing (meth)acrylate compound; and at least one catalyst. The dielectric film formed by such a composition can have a relatively low coefficient of thermal expansion (CTE) and a relatively high optical transparency.

This disclosure relates to dielectric film forming composition containing at least one fully imidized polyimide polymer; at least one inorganic filler; at least one metal-containing (meth)acrylate compound; and at least one catalyst. The dielectric film formed by such a composition can have a relatively low coefficient of thermal expansion (CTE) and a relatively high optical transparency.

The present teachings relate to compositions for forming a negative-tone photopatternable dielectric material, where the compositions include, among other components, an organic filler and one or more photoactive compounds, and where the presence of the organic filler enables the effective removal of such photoactive compounds (after curing, and during or after the development step) which, if allowed to remain in the photopatterned dielectric material, would lead to deleterious effects on its dielectric properties.

A compound shown by the following general formula (1-1),

##STR00001##

AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; p is 1 or 2; q is 1 or 2; r is 0 or 1; s is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.

Coating compositions comprise: a curable compound comprising: a core chosen from a C.sub.6 carbocyclic aromatic ring, a C.sub.2-5 heterocyclic aromatic ring, a C.sub.9-30 fused carbocyclic aromatic ring system, a C.sub.4-30 fused heterocyclic aromatic ring system, C.sub.1-20 aliphatic, and C.sub.3-20 cycloaliphatic, and three or more substituents of formula (1) ##STR00001##
wherein at least two substituents of formula (1) are attached to the aromatic core; provided that no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; a polymer; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition.

Coating compositions comprise: a curable compound comprising: a core chosen from a C.sub.6 carbocyclic aromatic ring, a C.sub.2-5 heterocyclic aromatic ring, a C.sub.9-30 fused carbocyclic aromatic ring system, a C.sub.4-30 fused heterocyclic aromatic ring system, C.sub.1-20 aliphatic, and C.sub.3-20 cycloaliphatic, and three or more substituents of formula (1) ##STR00001##
wherein at least two substituents of formula (1) are attached to the aromatic core; provided that no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; a polymer; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition.

A composition for forming a silicon-containing resist underlayer film contains a compound shown by the following general formula (A-1) and a thermally crosslinkable polysiloxane. R.sub.1 represents a methyl group, an ethyl group, a propyl group, an allyl group, or a propargyl group. R.sub.2 represents a hydrogen atom, an acetyl group, an acryloyl group, a methacryloyl group, a benzoyl group, a naphthoyl group, or an anthranoyl group. R.sub.3 represents a methyl group, an ethyl group, a propyl group, an allyl group, a propargyl group, or a group shown by the following general formula (A-2), where a broken line represents a bonding arm, and R.sub.1 and R.sub.2 are as defined above. An object of the present invention is to provide a silicon-containing resist underlayer film capable of exhibiting high effect of suppressing ultrafine pattern collapse and forming a resist pattern with favorable pattern profile in multilayer resist methods. ##STR00001##