In an example of a method for making a flow cell, a light sensitive material is deposited over a resin layer including depressions separated by interstitial regions, wherein the depressions overlie a first resin portion having a first thickness and the interstitial regions overlie a second resin portion having a second thickness that is greater than the first thickness. A predetermined ultraviolet light dosage that is based on the first and second thicknesses is directed through the resin layer, whereby the light sensitive material overlying the depressions is exposed to ultraviolet light and the second resin portion absorbs the ultraviolet light, thereby defining an altered light sensitive material at a first predetermined region over the resin layer. The altered light sensitive material is utilized to generate a functionalized layer at the first predetermined region or at a second predetermined region over the resin layer.

In an example of a method for making a flow cell, a metal material is sputtered over a transparent substrate including depressions separated by interstitial regions to form a metal film having a first thickness over the interstitial regions and having a second thickness over the depressions, the second thickness being about 30 nm or less and being at least ⅓ times smaller than the first thickness. A light sensitive material is deposited over the metal film; and the metal film is used to develop the light sensitive material through the transparent substrate to define an altered light sensitive material at a first predetermined region over the transparent substrate. The altered light sensitive material is utilized to generate a functionalized layer at the first predetermined region or at a second predetermined region over the transparent substrate.

In an example of a method for making a flow cell, a metal material is sputtered over a transparent substrate including depressions separated by interstitial regions to form a metal film having a first thickness over the interstitial regions and having a second thickness over the depressions, the second thickness being about 30 nm or less and being at least ⅓ times smaller than the first thickness. A light sensitive material is deposited over the metal film; and the metal film is used to develop the light sensitive material through the transparent substrate to define an altered light sensitive material at a first predetermined region over the transparent substrate. The altered light sensitive material is utilized to generate a functionalized layer at the first predetermined region or at a second predetermined region over the transparent substrate.

A method for producing a resin having a repeating unit that is decomposed by irradiation of an actinic ray or a radiation to generate acid, the method including polymerizing a specific compound represented by General formula (P-1) and a copolymerizable monomer compound, a method for producing an actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, and a resin corresponding to a reaction intermediate of the resin.

A method for producing a resin having a repeating unit that is decomposed by irradiation of an actinic ray or a radiation to generate acid, the method including polymerizing a specific compound represented by General formula (P-1) and a copolymerizable monomer compound, a method for producing an actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, and a resin corresponding to a reaction intermediate of the resin.

A resist composition comprising a base polymer and a sulfonium or iodonium salt of a fluorinated sulfonic acid having a phenylene group which is substituted with an iodized phenyl-containing group and a nitro group is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A method of processing a substrate that includes: forming, over the substrate placed in a process chamber, an extreme ultraviolet (EUV)-active photoresist film including a tin alkenoxide moiety by exposing the substrate to a tin-containing precursor and exposing the substrate to an oxygen-containing precursor that reacts with the tin from the tin-containing precursor to form the tin alkenoxide; and patterning the EUV-active photoresist film by exposing the substrate to an EUV irradiation.

Disclosed is a method for manufacturing an article made of a polymerized material including the steps of: —providing a vat of polymerizable material, transparent at least in the 400-800 nanometers wavelengths range, —irradiating the polymerizable material with a laser beam according to a predetermined pattern so as to polymerize the polymerizable material in order to form the article, the predetermined pattern being determined based on a three-dimension representation of the article with the positions in three dimensions of a plurality of volume units adapted to form together the article, the laser beam scanning the vat in three dimensions in order to be focused at each position of the volume units present in the predetermined pattern so as to initiate locally the polymerization of the polymerizable material at each of these positions.

The present invention provides a resin composition which is highly sensitive and exhibits high chemical resistance even in the case of being baked at a low temperature of 250° C. or less and can suppress the generation of outgas after curing. The present invention is a resin composition which contains (a) an alkali-soluble resin containing polyimide, polybenzoxazole, polyamide-imide, a precursor of any one of these compounds and/or a copolymer of these compounds and (b) an alkali-soluble resin having a monovalent or divalent group represented by the following general formula (1) in a structural unit and in which the modification rate of a phenolic hydroxyl group in the alkali-soluble resin (b) is 5% to 50%. ##STR00001##
(In general formula (1), O represents an oxygen atom. R.sup.1 represents a hydrogen atom or a hydrocarbon group which has 1 to 20 carbon atoms and may be substituted and R.sup.2 represents an alkyl group having 1 to 5 carbon atoms. s and t each independently represent an integer from 0 to 3. Provided that (s+t)≥1. d represents an integer from 0 to 2. u represents an integer from 1 to 2, and * represents a chemical bond.)

Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation. Subsequently, the photopatternable dielectric material is developed to pattern the photopatternable dielectric material into a first dielectric structure which at least partially fills the opening, and to remove the photopatternable dielectric material from over the upper surface.