Disclosed is a resin including a structural unit represented by formula (I) and a structural unit represented by formula (a2-A), and a resist composition: ##STR00001## wherein R.sup.1 represents a hydrogen atom or a methyl group; L.sup.1 and L.sup.2 each represent —O— or —S—; s1 represents an integer of 1 to 3; s2 represents an integer of 0 to 3; R.sup.a50 represents a hydrogen atom, a halogen atom, or an alkyl group which may have a halogen atom; R.sup.a51 represents a halogen atom, a hydroxy group, an alkyl group, an alkoxy group, an alkylcarbonyl group or the like; A.sup.a50 represents a single bond or *—X.sup.a51-(A.sup.a52-X.sup.a52).sub.nb—; A.sup.a52 represents an alkanediyl group; X.sup.a51 and X.sup.a52 each represent —O—, —CO—O— or —O—CO—; nb represents 0 or 1; and mb represents an integer of 0 to 4.

A light-curable composition is provided which may be used as a photopolymerizable material in an additive manufacturing process. The additive manufacturing process involves heating the light-curable composition which has a viscosity at 20° C. of at least 20 Pa.Math.s. The light-curable composition includes a photopolymerizable matrix material, at least one thermoplastic polymer dissolved therein, and at least one photoinitiator. Polycaprolactone or a derivative thereof is used as the dissolved thermoplastic polymer.

An epoxy compound of formula (1) is provided. A resist composition comprising the epoxy compound is capable of adequately controlling the diffusion length of acid generated from an acid generator without sacrificing sensitivity. ##STR00001##

An epoxy compound of formula (1) is provided. A resist composition comprising the epoxy compound is capable of adequately controlling the diffusion length of acid generated from an acid generator without sacrificing sensitivity. ##STR00001##

The present invention relates to a structure for a quantum dot barrier rib and a process for preparing the same. The structure for a quantum dot barrier rib of the present invention comprises a cured film having a uniform film thickness and an appropriate range of film thickness. Here, the reflectance R.sub.SCI measured by the SCI (specular component included) method and the reflectance R.sub.SCE measured by the SCE (specular component excluded) method are reduced, and the ratio between them (R.sub.SCE/R.sub.SCI) is appropriately adjusted, so that it is possible to satisfy such characteristics as high light-shielding property and low reflectance at the same time while the resolution and pattern characteristics are maintained to be excellent. In addition, when the structure for a quantum dot barrier rib is prepared, it is possible to form a multilayer pattern having a uniform film thickness suitable for the quantum dot barrier ribs in a single development process. Thus, it can be advantageously used for a quantum dot display.

A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a C.sub.1-C.sub.20 hydrocarbylene group which may contain an ester bond or ether bond and a carboxylate anion having an iodized or brominated hydrocarbyl group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I):

##STR00001##

wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.

A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I):

##STR00001##

wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.

An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability. Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution. The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability. Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution. The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.