To provide a resist material that can form a film with high smoothness and uniformity and has high patterning performance, such as resolution, a resist material is provided that contains a calixarene compound (A) with a molecular structure represented by the following structural formula (1) and a resin component (B); ##STR00001##
wherein R.sup.1 denotes a perfluoroalkyl group or a structural moiety with a perfluoroalkyl group; R.sup.2 denotes a hydrogen atom, a polar group, a polymerizable group, or a structural moiety with a polar group or a polymerizable group; R.sup.3 denotes a hydrogen atom, an aliphatic hydrocarbon group that optionally has a substituent, or an aryl group that optionally has a substituent; n denotes an integer in the range of 2 to 10; and * denotes a bonding point with an aromatic ring.

The present invention relates to a composition comprising i) at least one polythiophene comprising monomer units of structure (Ia) or (Ib)

##STR00001## in which *, X, Z, R, and R.sup.1-R.sup.6 are as defined herein; ii) at least one organic compound carrying one or two inorganic acid group(s), preferably one or two sulfonic acid group(s), one or two sulfuric acid group(s), one or two phosphonic acid group(s) or one or two phosphoric acid group(s), or a salt of said organic compound, wherein the molecular weight of the organic compound or the salt thereof is less than 1,000 g/mol; and iii) at least one organic solvent. A method of preparing such compounds is also provided.

A photobase generator, includes a compound including a first skeleton represented by the following formula (a); and a second skeleton including a nitrogen atom bonding to a bonding position of the first skeleton to form an amide group, and a pyridine skeleton in addition to the nitrogen atom, in which the compound generates a base in which a hydrogen atom is bonded with the nitrogen atom of the second skeleton by light irradiation. In formula (a), G is a divalent aromatic group, and * represents the bonding position with the nitrogen atom.

##STR00001##

The present application relates to a compound of Formula 1, a binder resin, a negative-type photosensitive resin composition, and a display device comprising a black bank formed using same.

A DFR film manufacturing system including: a stirring device for melting and stirring a photoinitiator and an epoxy base thermoplastic resin; a pump station for receiving a mixture in which the photoinitiator and the epoxy-based thermoplastic resin are molted and mixed from the stirring device, and filtering and forcedly transferring impurities; a coating roller for transferring the base film in a state in which the base films get in partially contact with each other; a coating device for coating the received molten mixture on the base film getting in close contact with the coating roller so as to form a DFR layer; a laminating roller for laminating the cover film supplied from the cover film unwinder onto the DFR layer coated on the base film; and a cutting device for cutting the DFR film transferred from the laminating roller.

A photosensitive resin composition comprising: (a) an epoxy resin, (b) a cationic polymerization initiator, (c) an anthracene derivative, and (d) an organic solvent having a carbonyl group, wherein the anthracene derivative (c) comprises at least one selected from the group consisting of compounds represented by a following formula (1) (In the formula (1), R.sup.1 and R.sup.2 each independently represents an alkyl group having 4 or more carbon atoms or an aryl group having 6 to 10 carbon atoms, R.sup.3 and R.sup.4 each independently represents an alkyl group, an alkoxy group having 4 or more carbon atoms, an amino group, an alkylamino group, an alkylsulfonyl group, or a halogen atom, and m and n each independently represents an integer of 0 to 4).

##STR00001##

A photosensitive resin composition comprising: (a) an epoxy resin, (b) a cationic polymerization initiator, (c) an anthracene derivative, and (d) an organic solvent having a carbonyl group, wherein the anthracene derivative (c) comprises at least one selected from the group consisting of compounds represented by a following formula (1) (In the formula (1), R.sup.1 and R.sup.2 each independently represents an alkyl group having 4 or more carbon atoms or an aryl group having 6 to 10 carbon atoms, R.sup.3 and R.sup.4 each independently represents an alkyl group, an alkoxy group having 4 or more carbon atoms, an amino group, an alkylamino group, an alkylsulfonyl group, or a halogen atom, and m and n each independently represents an integer of 0 to 4).

##STR00001##

The present disclosure relates to a dual-cure phase-separation type photosensitive resin composition for continuous 3D printing with high precision, including an acrylate having a cross-linkable double bond, a polyurethane prepolymer, a chain extender, and a photoinitiator. The polyurethane prepolymer is produced by a reaction between an isocyanate and a polyether polyol with a molecular weight larger than or equal to 4000 under heating and catalytic action. The photosensitive resin composition of the present disclosure is used in the continuous 3D printing to make high precision parts.

A resist composition comprising a sulfonium salt of a carboxylic acid having a nitro-substituted benzene ring is provided. The carboxylic acid is free of iodine and bromine, and when the benzene ring is fluorinated, the number of fluorine atoms is up to 3. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.

The present disclosure provides a quantum dot light emitting panel, a display device, and a manufacturing method. The quantum dot light emitting panel comprises: a base substrate; a cathode layer, located on a side of the base substrate; an electron transfer layer, located on a side of the cathode layer located away from the base substrate; a quantum dot light emitting layer, located on a side of the electron transfer layer located away from the cathode layer, and having at least two light emitting portions having mutually different wavelength ranges of emitted light; a photosensitive polymer film layer, located between the quantum dot light emitting layer and the electron transfer layer, having photosensitive portions in a one-to-one correspondence with the light emitting portions, and configured such that molecular chains break when the photosensitive polymer film layer is subjected to preconfigured light irradiation; and an anode layer, located on a side of the quantum dot light emitting layer located away from the photosensitive polymer film layer.