A method of manufacturing a display device in a chamber in which a material including yttrium is coated on an inner surface includes: forming a first layer pattern by dry etching on a substrate; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing a second layer pattern by using the photoresist pattern as an etch mask; and performing an additional acid etching process by using an etching solution including at least one of hydrochloric acid, sulfuric acid, or nitric acid before the forming of the photoresist pattern on the second layer material after the dry etching to form the first layer pattern.

The present invention provides a silicone skeleton-containing polymer including a silicone skeleton shown by the following formula (1) and having a weight average molecular weight of 3,000 to 500,000.

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This can provide a silicone skeleton-containing polymer that can easily form a fine pattern with a large film thickness, and can form a cured material layer (cured film) that is excellent in various film properties such as crack resistance and adhesion properties to a substrate, electronic parts, and a semiconductor device, particularly a base material used for a circuit board, and has high reliability as a film to protect electric and electronic parts and a film for bonding substrates; and a photo-curable resin composition that contains the polymer, a photo-curable dry film thereof, a laminate using these materials, and a patterning process.

Compounds of the formula (I) and (IA) wherein X is —O(CO)—; R.sub.1 is C.sub.1-C.sub.12haloalkyl or C.sub.6-C.sub.10haloaryl; R.sub.2 is located in position 7 of the coumarinyl ring and is OR.sub.8; R.sub.2a, R.sub.2b and R.sub.2C independently of each other are hydrogen; R.sub.3 is C.sub.1-C.sub.8haloalkyl or C.sub.1-C.sub.8haloalkyl; R.sub.4 is hydrogen; and R.sub.8 is C.sub.1-C.sub.6alkyI; are suitable as photosensitive acid donors in the preparation of photoresist compositions such as used for example in the preparation of spacers, insulating layers, interlayer dielectric films, insulation layers, planarization layers, protecting layers, overcoat layers, banks for electroluminescence displays and liquid crystal displays (LCD).

##STR00001##

Compounds of the formula (I) and (IA) wherein X is —O(CO)—; R.sub.1 is C.sub.1-C.sub.12haloalkyl or C.sub.6-C.sub.10haloaryl; R.sub.2 is located in position 7 of the coumarinyl ring and is OR.sub.8; R.sub.2a, R.sub.2b and R.sub.2C independently of each other are hydrogen; R.sub.3 is C.sub.1-C.sub.8haloalkyl or C.sub.1-C.sub.8haloalkyl; R.sub.4 is hydrogen; and R.sub.8 is C.sub.1-C.sub.6alkyI; are suitable as photosensitive acid donors in the preparation of photoresist compositions such as used for example in the preparation of spacers, insulating layers, interlayer dielectric films, insulation layers, planarization layers, protecting layers, overcoat layers, banks for electroluminescence displays and liquid crystal displays (LCD).

##STR00001##

There are free radical scavengers of formula (P.sub.m-L).sub.n-T.sub.q. Also provided are negative-working lithographic printing plate precursors comprising a hydrophilic substrate and a NIR photopolymerizable or UV-violet photopolymerizable imageable layer coated on the hydrophilic layer, the imageable layer also being photopolymerizable by visible light, the imageable layer having an outer surface and a thickness, the outer surface of the imageable layer being uniformly, and partially or completely crosslinked down to a depth corresponding to at most about 70% of the thickness of the imageable layer.

A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2). ##STR00001##

The invention aims to provide a photosensitive colored resin composition and a heat resistant colored resin film produced therefrom that has the function of absorbing light in the shorter visible wavelength range with high sensitivity to serve effectively as planarizing film, insulation layer, and barrier rib used in organic luminescence apparatuses and display elements and the function of reducing external light reflection. The photosensitive colored resin composition includes an alkali-soluble resin (a), a photosensitive compound (b), and a compound (c) having an absorption maximum in the wavelength range of 400 nm or more and less than 490 nm, the photosensitive compound (b) containing a photosensitive compound (b1), the photosensitive compound (b1) being such that its maximum absorption wavelength in the range of 350 nm or more and 450 nm or less is located within the wavelength range of 350 nm or more and 390 nm or less.

A pattern forming method includes: applying an actinic ray-sensitive or radiation- sensitive resin composition onto a substrate to form a resist film; forming an upper layer film on the resist film, using a composition for forming an upper layer film; exposing the resist film having the upper layer film formed thereon; and developing the exposed resist film using a developer including an organic solvent to form a pattern. The composition for forming an upper layer film contains a resin having a repeating unit (a) with a ClogP value of 2.85 or more and a compound (b) with a ClogP of 1.30 or less, and the receding contact angle of the upper layer film with water is 70 degrees or more, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method.

A pattern forming method includes: applying an actinic ray-sensitive or radiation- sensitive resin composition onto a substrate to form a resist film; forming an upper layer film on the resist film, using a composition for forming an upper layer film; exposing the resist film having the upper layer film formed thereon; and developing the exposed resist film using a developer including an organic solvent to form a pattern. The composition for forming an upper layer film contains a resin having a repeating unit (a) with a ClogP value of 2.85 or more and a compound (b) with a ClogP of 1.30 or less, and the receding contact angle of the upper layer film with water is 70 degrees or more, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method.

A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent,

WX).sub.n   (1)

W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10,

##STR00001##

The dotted line represents a bonding arm. R.sup.01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.