Patent classifications
G03F7/039
Resist composition and method for producing resist pattern, and method for producing plated molded article
The present invention provides a resist composition which has sufficient resistant to a plating treatment and is capable of forming a resist pattern with high accuracy. The present invention also provides a method for producing a resist pattern using the resist composition, and a method for producing a plated molded article using the resist pattern. The present invention relates to a resist composition comprising a compound (I) having a quinone diazide sulfonyl group, a resin comprising a structural unit having an acid-labile group (A1), an alkali-soluble resin (A2) and an acid generator (B); a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article using the resist pattern.
Resist composition and method for producing resist pattern, and method for producing plated molded article
The present invention provides a resist composition which has sufficient resistant to a plating treatment and is capable of forming a resist pattern with high accuracy. The present invention also provides a method for producing a resist pattern using the resist composition, and a method for producing a plated molded article using the resist pattern. The present invention relates to a resist composition comprising a compound (I) having a quinone diazide sulfonyl group, a resin comprising a structural unit having an acid-labile group (A1), an alkali-soluble resin (A2) and an acid generator (B); a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article using the resist pattern.
Photoresist composition and photoresist film using the same
The present invention relates to a photoresist composition capable of realizing excellent pattern performance during formation of fine patterns, and of preparing a photoresist film that is excellent in chemical stability of a plating solution, and a photoresist film using the same.
Photoresist composition and photoresist film using the same
The present invention relates to a photoresist composition capable of realizing excellent pattern performance during formation of fine patterns, and of preparing a photoresist film that is excellent in chemical stability of a plating solution, and a photoresist film using the same.
PAG-FREE POSITIVE CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHODS OF USING THE SAME
The disclosed subject matter relates to resist compositions comprising a phenolic resin component, a photoactive 2,1,5-diazonaphthoquinonesulfonate component (PAC), a solvent component that do not include or require the use of an added photo acid generator (PAG). The PAC is a free PAC, a coupled PAC (PACb) or a combination thereof that includes a substituted or unsubstituted 2,1,5-DNQ material or compound onto which a substituted or unsubstituted 2,1,5-DNQ material is appended that, when UV exposed, do not form sulfonic acid. The phenolic resin component is a Novolak derivative in which some or all of the free hydroxy groups are protected with an acid cleavable acetal moiety which can include a PACb moiety. The disclosed subject matter also relates to the methods of using the present compositions in either in thick for thin film photoresist device manufacturing methodologies.
CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND
A chemically amplified resist composition contains (A) a polymer compound containing one or two or more kinds of repeating units, at least one kind of the repeating units is polymerized from a polymerizable monomer with not more than 1000 ppm of a residual oligomer in a form of dimer to hexamer. An object of the present invention is to provide: a chemically amplified resist composition capable of achieving favorable resolution, pattern profile, and line edge roughness, and simultaneously suppressing development-residue defect, which would otherwise cause mask defect; and a method for forming a resist pattern by using this composition.
Fast fabrication of polymer out-of-plane optical coupler by gray-scale lithography
A lithographic method for making an out-of-plane optical coupler includes forming a photoresist layer of positive photoresist material over a substrate. The positive photoresist layer undergoes a flood exposure to light through a binary mask to pattern a latent image of a mirror blank in the photoresist layer. A laser beam is scanned over the latent image of the mirror blank to apply controlled dosages of light at specified locations to form a latent image of a planar mirror surface that is oriented at a prescribed non-zero angle to a plane in which the substrate extends. The positive photoresist material is developed so that a remaining portion of the developed positive photoresist material forms an out-of-plane optical coupler having a planar mirror surface that is oriented at the prescribed angle.
Fast fabrication of polymer out-of-plane optical coupler by gray-scale lithography
A lithographic method for making an out-of-plane optical coupler includes forming a photoresist layer of positive photoresist material over a substrate. The positive photoresist layer undergoes a flood exposure to light through a binary mask to pattern a latent image of a mirror blank in the photoresist layer. A laser beam is scanned over the latent image of the mirror blank to apply controlled dosages of light at specified locations to form a latent image of a planar mirror surface that is oriented at a prescribed non-zero angle to a plane in which the substrate extends. The positive photoresist material is developed so that a remaining portion of the developed positive photoresist material forms an out-of-plane optical coupler having a planar mirror surface that is oriented at the prescribed angle.
Positive-working photoresist composition, pattern produced therefrom, and method for producing pattern
The present invention provides a positive photoresist composition having excellent storage stability, sensitivity, developing properties, plating resistance, and heat resistance. More specifically, a specific dissolution inhibitor in the form of an oligomer having the same repeating unit structure as the resin contained in the photoresist composition is applied to said composition.
Positive-working photoresist composition, pattern produced therefrom, and method for producing pattern
The present invention provides a positive photoresist composition having excellent storage stability, sensitivity, developing properties, plating resistance, and heat resistance. More specifically, a specific dissolution inhibitor in the form of an oligomer having the same repeating unit structure as the resin contained in the photoresist composition is applied to said composition.