A resist composition comprising a carbonyloxyimide compound having an iodized or brominated aromatic ring has a high sensitivity and forms a pattern having improved LWR or CDU.

A resist underlayer composition and a method of forming patterns, the composition including a polymer including at least one of a first moiety represented by Chemical Formula 1-1 and a second moiety represented by Chemical Formula 1-2; a thermal acid generator including a salt composed of an anion of an acid and a cation of a base, the base having pKa of greater than or equal to about 7; and a solvent, ##STR00001##

A layer is formed over a wafer. The layer contains a material that is sensitive to an extreme ultraviolet (EUV) radiation. A first baking process is performed to the layer. The first baking process is performed with a first humidity level that is greater than about 44%. After the first baking process, the layer is exposed to EUV radiation. A second baking process is performed to the layer. The second baking process is performed with a second humidity level that is greater than about 44%. The layer is rinsed with a liquid that contains water before the second baking process or after the second baking process. After the exposing, the layer is developed with a developer solution that contains water.

A method for forming a semiconductor structure is provided. The method includes depositing a hard mask layer over a substrate. The method further includes depositing a silver precursor layer over the hard mask layer. The method further includes exposing portions of the silver precursor layer to a radiation, the radiation causing a reduction of silver ions in the irradiated portions of the silver precursor layer. The method further includes removing non-irradiated portions of the silver precursor layer, resulting in a plurality of silver seed structures.

A method for forming a semiconductor structure is provided. The method includes depositing a hard mask layer over a substrate. The method further includes depositing a silver precursor layer over the hard mask layer. The method further includes exposing portions of the silver precursor layer to a radiation, the radiation causing a reduction of silver ions in the irradiated portions of the silver precursor layer. The method further includes removing non-irradiated portions of the silver precursor layer, resulting in a plurality of silver seed structures.

Methods and apparatus for fabricating high-resolution thin-layer metal patterns and 3D Metal structures are provided. The methods and apparatus operate via photo-(stereo)lithography at room temperature. The printed metal patterns, for example silver patterns, exhibit high electrical conductivity, comparable to or better than the conductivity of the silver printed by current laser sintering or thermal annealing at high temperature.

A layer is formed over a wafer. The layer contains a material that is sensitive to an extreme ultraviolet (EUV) radiation. A first baking process is performed to the layer. The first baking process is performed with a first humidity level that is greater than about 44%. After the first baking process, the layer is exposed to EUV radiation. A second baking process is performed to the layer. The second baking process is performed with a second humidity level that is greater than about 44%. The layer is rinsed with a liquid that contains water before the second baking process or after the second baking process. After the exposing, the layer is developed with a developer solution that contains water.

A method for producing a conductive film having a substrate and a conductive layer disposed on the substrate has a first step of forming a precursor layer on the substrate, the precursor layer including a metal component or its precursor, a water-insoluble polymer X having a cross-linking group, a water-insoluble polymer Y having a reactive group that reacts with the cross-linking group, and a water-soluble polymer Z different from polymer X and polymer Y; a second step of reacting the cross-linking group in the water-insoluble polymer X with the reactive group in the water-insoluble polymer Y; and a third step of forming the conductive layer by removing the water-soluble polymer Z.

A method for producing a conductive film having a substrate and a conductive layer disposed on the substrate has a first step of forming a precursor layer on the substrate, the precursor layer including a metal component or its precursor, a water-insoluble polymer X having a cross-linking group, a water-insoluble polymer Y having a reactive group that reacts with the cross-linking group, and a water-soluble polymer Z different from polymer X and polymer Y; a second step of reacting the cross-linking group in the water-insoluble polymer X with the reactive group in the water-insoluble polymer Y; and a third step of forming the conductive layer by removing the water-soluble polymer Z.

A resist underlayer composition and a method of forming patterns, the composition including a polymer including at least one of a first moiety represented by Chemical Formula 1-1 and a second moiety represented by Chemical Formula 1-2; a thermal acid generator including a salt composed of an anion of an acid and a cation of a base, the base having pKa of greater than or equal to about 7; and a solvent,

##STR00001##