G03F7/06

Humidity Control in EUV Lithography
20190094716 · 2019-03-28 ·

A photo-sensitive layer is applied over a wafer. The photo-sensitive layer is exposed. In some embodiments, the photo-sensitive layer is exposed to EUV light. The photo-sensitive layer is baked. The photo-sensitive layer is developed. Humidity is introduced in at least one of: the applying, the baking, or the developing.

SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS

A resist composition comprising a sulfonium compound of specific structure as PAG has excellent lithography performance factors such as minimal defects, high sensitivity, improved LWR and CDU, and is a quite effective resist material for precise micropatterning.

PHOTOSENSITIVE REDUCIBLE SILVER ION-CONTAINING COMPOSITIONS
20190043635 · 2019-02-07 ·

A photosensitive reducible silver ion-containing composition can be used to provide electrically-conductive silver metal in thin films or patterns. This composition comprises: a) a non-hydroxylic-solvent soluble silver complex represented by formula (I):

##STR00001##

wherein P represents a 5- or 6-membered N-heteroaromatic compound; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, but when a is 1, b is 1, and when a is 2, b is 2; b) optionally, a photosensitizer; and c) a solvent medium having a non-hydroxylic solvent. Electrically-conductive silver can be provided by photochemical conversion of the reducible silver ions in the complex. L is represented by formula (III):

##STR00002##

wherein R.sub.4 is a branched or linear alkyl group having 1 to 8 carbon atoms and any of hydrogen atoms of the R.sub.4 branched or linear alkyl group optionally can be replaced with a fluorine atom.

PHOTOSENSITIVE REDUCIBLE SILVER ION-CONTAINING COMPOSITIONS
20190043635 · 2019-02-07 ·

A photosensitive reducible silver ion-containing composition can be used to provide electrically-conductive silver metal in thin films or patterns. This composition comprises: a) a non-hydroxylic-solvent soluble silver complex represented by formula (I):

##STR00001##

wherein P represents a 5- or 6-membered N-heteroaromatic compound; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, but when a is 1, b is 1, and when a is 2, b is 2; b) optionally, a photosensitizer; and c) a solvent medium having a non-hydroxylic solvent. Electrically-conductive silver can be provided by photochemical conversion of the reducible silver ions in the complex. L is represented by formula (III):

##STR00002##

wherein R.sub.4 is a branched or linear alkyl group having 1 to 8 carbon atoms and any of hydrogen atoms of the R.sub.4 branched or linear alkyl group optionally can be replaced with a fluorine atom.

Electroconductive film and method for manufacturing same
10198132 · 2019-02-05 · ·

An electroconductive film and a method for manufacturing the electroconductive film, having an insulating substrate and an electrode including a thin metal wire disposed on the surface of the insulating substrate, wherein the width of the thin metal wire varies, the difference between the maximum wire width and the minimum wire width of the thin metal wire is 20% to less than 75% of the average wire width of the thin metal wire, and the average wire width is 1-7 m.

Electroconductive film and method for manufacturing same
10198132 · 2019-02-05 · ·

An electroconductive film and a method for manufacturing the electroconductive film, having an insulating substrate and an electrode including a thin metal wire disposed on the surface of the insulating substrate, wherein the width of the thin metal wire varies, the difference between the maximum wire width and the minimum wire width of the thin metal wire is 20% to less than 75% of the average wire width of the thin metal wire, and the average wire width is 1-7 m.

Photosensitive reducible silver ion-containing compositions
10186342 · 2019-01-22 · ·

A photosensitive reducible silver ion-containing composition can be used to provide electrically-conductive silver metal in thin films or patterns. This composition comprises: a) a non-hydroxylic-solvent soluble silver complex represented by the following formula (I):
(Ag.sup.+).sub.a(L).sub.b(P).sub.c (I)
wherein L represents an -oxy carboxylate; P represents a 5- or 6-membered N-heteroaromatic compound; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, provided that when a is 1, b is 1, and when a is 2, b is 2; b) optionally, a photosensitizer that can either reduce the reducible silver ion or oxidize the -oxy carboxylate; and c) a solvent medium comprising at least one non-hydroxylic solvent. Electrically-conductive silver can be provided by photochemical conversion of the reducible silver ions in the complex.

Photosensitive reducible silver ion-containing compositions
10186342 · 2019-01-22 · ·

A photosensitive reducible silver ion-containing composition can be used to provide electrically-conductive silver metal in thin films or patterns. This composition comprises: a) a non-hydroxylic-solvent soluble silver complex represented by the following formula (I):
(Ag.sup.+).sub.a(L).sub.b(P).sub.c (I)
wherein L represents an -oxy carboxylate; P represents a 5- or 6-membered N-heteroaromatic compound; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, provided that when a is 1, b is 1, and when a is 2, b is 2; b) optionally, a photosensitizer that can either reduce the reducible silver ion or oxidize the -oxy carboxylate; and c) a solvent medium comprising at least one non-hydroxylic solvent. Electrically-conductive silver can be provided by photochemical conversion of the reducible silver ions in the complex.

SILVER PATTERNING AND INTERCONNECT PROCESSES
20240329533 · 2024-10-03 ·

A method for forming a semiconductor structure is provided. The method includes depositing a hard mask layer over a substrate. The method further includes depositing a silver precursor layer over the hard mask layer. The method further includes exposing portions of the silver precursor layer to a radiation, the radiation causing a reduction of silver ions in the irradiated portions of the silver precursor layer. The method further includes removing non-irradiated portions of the silver precursor layer, resulting in a plurality of silver seed structures.

SILVER PATTERNING AND INTERCONNECT PROCESSES
20240329533 · 2024-10-03 ·

A method for forming a semiconductor structure is provided. The method includes depositing a hard mask layer over a substrate. The method further includes depositing a silver precursor layer over the hard mask layer. The method further includes exposing portions of the silver precursor layer to a radiation, the radiation causing a reduction of silver ions in the irradiated portions of the silver precursor layer. The method further includes removing non-irradiated portions of the silver precursor layer, resulting in a plurality of silver seed structures.