[Problem] To provide a negative type photosensitive composition which can be developed with a low-concentration developer. [Means for Solution] A negative type photosensitive composition comprising (I) an alkali-soluble resin having a carboxyl group, (II) a polymerization initiator, (III) a compound containing two or more (meth)acryloyloxy groups, and (IV) a solvent, wherein the content of the compound containing two or more (meth)acryloyloxy groups is 40 to 300 mass % based on the total mass of the alkali-soluble resin.

An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability. Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution. The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

Provided are a coloring composition including a colorant and a resin, in which the colorant includes a pigment A having a structure represented by Formula (X1), and the resin includes at least one selected from a polyimide resin, a polyimide precursor, a polybenzoxazole resin, a polybenzoxazole precursor, or a polysiloxane resin; a film obtained from the coloring composition; and an optical filter, a solid-state imaging element, and an image display device including the film.

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The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The positive-type photosensitive resin composition comprises a nonpolar organic solvent, thereby suppressing the reactivity of the epoxy group in the composition to reduce the production of diol compounds. When a cured film is prepared from the composition, an appropriate level of developability can be maintained to further enhance the pattern adhesiveness, resolution, and sensitivity. Further, since the composition of the present invention has a small difference in the film retention rates at room temperature and low temperatures, the composition may have stable stability over time.

A photosensitive resin composition, an optical film and a method of producing the same are provided. The photosensitive resin composition includes a thiol compound (A) having two or more groups represented by formula (I-a), a polyether-modified polysiloxane (B), an ethylenically unsaturated group-containing compound (C) having one or two aromatic rings, a bisphenol fluorene oligomer (D) having one or two (meth)acryloyl groups, and a photoinitiator (E).

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A photosensitive resin composition including a silsesquioxane-based copolymer obtained by copolymerizing a first monomer represented by Chemical Formula 1 (R.sub.1—R.sub.2—Si (R.sub.3).sub.3), a second monomer represented by Chemical Formula 2 ((R.sub.4).sub.n—Si(R.sub.5).sub.4-n), a third monomer represented by Chemical Formula 3 (Si(R.sub.6).sub.4), and a fourth monomer represented by Chemical Formula 4 ((R.sub.7).sub.3—Si—R.sub.8—Si—(R.sub.7).sub.3) are provided.

A photosensitive resin composition containing (A) an acid-crosslinkable group-containing silicone resin, (B) a photo-acid generator, and (C) quantum dot particles. Thus, a photosensitive resin composition is capable of easily forming a film having favorable heat resistance, lithography resolution, and luminous properties; a photosensitive resin film and a photosensitive dry film are obtained by using the photosensitive resin composition; patterning processes use these; and a light emitting device is obtained by using the photosensitive resin composition.

A resist underlayer film for a resist pattern formation by developing a resist with organic solvent after exposure of resist. Method for manufacturing a semiconductor includes: applying onto a substrate a resist underlayer film forming composition including hydrolyzable silanes, hydrolysis products of hydrolyzable silanes, hydrolysis-condensation products of hydrolyzable silanes, or a combination thereof. Hydrolyzable silanes being silane of Formulas (1), (2) and (3). Silane of Formulas (1), (2) and (3) in total silanes in a ratio % by mole of 45-90:6-20:0-35; baking the applied resist underlayer film forming composition to form a resist underlayer film; applying a composition to form a resist film; exposing the resist film to light; developing the resist film after exposure, with organic solvent to obtain patterned resist film; and etching the resist underlayer film by using the patterned resist film and processing the substrate using the patterned resist underlayer film; wherein
Si(R.sup.1).sub.4  Formula (1)
R.sup.2[Si(R.sup.3).sub.3]  Formula (2)
R.sup.4[Si(R.sup.5).sub.3].sub.b  Formula (3).

A resist composition is provided comprising (A) a metal compound having formula (A-1), a hydrolysate or hydrolytic condensate thereof, or the reaction product of the metal compound, hydrolysate or hydrolytic condensate thereof with a di- or trihydric alcohol having formula (A-2), and (B) a sensitizer containing a compound having formula (B-1). The resist composition is adapted to change a solubility in developer upon exposure to high-energy radiation, has high resolution and sensitivity, and forms a pattern of good profile with minimal edge roughness after exposure. ##STR00001##

Provided are a semiconductor element intermediate including: a substrate and a multilayer resist layer, in which the multilayer resist layer includes a metal-containing film, and in which the metal-containing film has a content of germanium element of 20 atm % or more, or a total content of tin element, indium element, and gallium element of 1 atm % or more, as measured by X-ray photoelectric spectroscopy, and an application of the semiconductor intermediate.