An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability.

Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution.

The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

The object of the present invention is to provide resist underlayer film-forming composition for forming resist underlayer film usable as hard mask and removable by wet etching process using chemical solution such as sulfuric acid/hydrogen peroxide. A resist underlayer film-forming composition for lithography comprises a component (A) and component (B), the component (A) includes a hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, the hydrolyzable silane includes hydrolyzable silane of Formula (1):R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b) (where R.sup.1 is organic group of Formula (2):

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and is bonded to silicon atom through a Si—C bond; R.sup.3 is an alkoxy group, acyloxy group, or halogen group; is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3), and the component (B) is cross-linkable compound having ring structure having alkoxymethyl group or hydroxymethyl group, cross-linkable compound having epoxy group or blocked isocyanate group.

In this invention use of silicone hard-coated polycarbonate (SHC-PC) as direct photo definable, thermally, chemically and optically stable polymer that can be patterned using conventional microfabrication and drying etching process is reported. As a result of the increased resistance to thermal and chemical deformations and flow of the silicone hard-coated polycarbonate (SHC-PC), it has been shown for the first time that the illustrated process herein to be compatible with a variety of conventional thin film deposition, micro and nano fabrication approaches such as metal evaporation, photoresist deposition/developing and electroplating that are typically incompatible to polycarbonate. As such high optical clarity surfaces with ultra-hydrophobic-hydrophilic properties with well-defined micro and nano patterned surface features of high surface roughness were fabricated with high fidelity.

A composition includes a polymer (1) having a partial structure represented by formula (1), and a solvent. X is a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group having 1 to 5 carbon atoms, a hydroxyalkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms. Y is a monovalent organic group having 1 to 12 carbon atoms and containing a hetero atom or a monovalent inorganic acid group. Z is a linking group represented by —O—, —S—, or —NR—, where R is an organic group having 1 to 20 carbon atoms. R.sup.1 and R.sup.2 are each independently a hydrogen atom, a halogen atom, or an organic group having 1 to 20 carbon atoms, or the like.

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The present invention is related to a surface control additive for a radiation curing system, the method for its preparation as well as its application. The surface control additive has the following structure: ##STR00001##
wherein A is ##STR00002##
wherein m is an integer from 0 to 400, n is an integer from 1 to 500, x is an integer from 0 to 800, p is an integer from 0 to 600, q is an integer from 1 to 800, R.sup.4 and R.sup.5 are H or CH.sub.3 respectively, R.sup.6 is H or a linear or a branched alkyl group containing 1-18 carbon atoms or an acyl group containing 2-5 carbon atoms. The surface control additive of the present invention is applied to radiation curing (UV/EB) paint and inks, enables the coatings to maintain non-adhesive and smooth for a long time, and minimizes transferable precipitates from a cured film. In addition, by using different combinations of EO and PO, the surface control additive of the present invention can adapt to a free selection from high-polarity aquosity to a low-polarity aliphatic hydrocarbon solvent system.

The present invention relates to a photocurable coating composition for forming a low refractive layer, a method for preparing an antireflection film using the photocurable coating composition, and an anti-reflective film prepared by using the photocurable coating composition. According to the present invention, a low refractive layer is formed of a photocurable coating composition containing two or more types of photo-polymerizable compounds, a photoinitiator, surface-treated hollow inorganic nanoparticles, and surface-treated solid inorganic nanoparticles.

A photoresist polymer includes a first repeating unit and a second repeating unit. The first repeating unit includes a fluorine leaving group that is configured to be removed by a photo-chemical reaction. The second repeating unit includes a silicon-containing leaving group that is configured to be removed by the fluorine leaving group when the fluorine leaving group is removed from the first repeating unit.

An example of a flow cell includes a substrate; a first primer set attached to a first region on the substrate, the first primer set including an un-cleavable first primer and a cleavable second primer; and a second primer set attached to a second region on the substrate, the second primer set including a cleavable first primer and an un-cleavable second primer.

Techniques for EUV resist pattern transfer using a graded hardmask are provided. In one aspect, a method of patterning is provided. The method includes: forming a graded hardmask on a device stack; depositing a resist onto the graded hardmask; patterning the resist to form a pattern in the resist having at least one feature; modifying at least one surface region to increase an etch rate of the graded hardmask; transferring the pattern from the resist to the graded hardmask; and transferring the pattern from the graded hardmask to at least one underlying layer of the device stack. A device structure formed by the patterning method is also provided.

A material for forming an organic film contains a polymer having a repeating unit shown by the following general formula (1), and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; W.sub.1 represents a divalent organic group having 2 to 20 carbon atoms and no aromatic ring, and a methylene group constituting the organic group is optionally substituted with an oxygen atom or a carbonyl group; and W.sub.2 represents a divalent organic group having 6 to 80 carbon atoms and at least one or more aromatic rings. This invention provides: an organic film material being excellent in film formability and enabling high etching resistance and excellent twisting resistance and filling property; a patterning process using this material; and a polymer suitable for such an organic film material. ##STR00001##