The present invention relates to a photosensitive resin composition and an insulation film prepared therefrom. Since the photosensitive resin composition comprises a blocked isocyanate-based compound, it can form a transparent insulation film while it maintains excellent film retention rate, hardness, and resolution.

The present invention relates to a photosensitive resin composition and an insulation film prepared therefrom. Since the photosensitive resin composition comprises a blocked isocyanate-based compound, it can form a transparent insulation film while it maintains excellent film retention rate, hardness, and resolution.

The present invention is a negative-acting photosensitive resin composition including (A) a compound having a triazine ring and represented by formula (1) (in formula (1), each R.sub.1 independently represents an organic group, wherein at least one R.sub.1 represents an organic group having a glycidyl group or an organic group having an oxetanyl group), (B) an epoxy resin having in each molecule a benzene backbone and at least two epoxy groups and having an epoxy equivalent weight of not more than 500 g/eq., and (C) a cationic photopolymerization initiator. The content of the (A) compound represented by formula (1) with reference to the (B) epoxy resin is 1 to 50 mass %. The (B) epoxy resin satisfies at least one of the following conditions (i) and (ii): condition (i) a weight-average molecular weight of at least 500, and condition (ii) a softening point of at least 40° C.

##STR00001##

There are provided a photosensitive resin composition which can be applied to either a projection exposure or direct-write exposure machine without fine adjustment of the composition, and can form a resist pattern having an excellent cross-sectional shape in which an undercut in which the bottom portion of the resist pattern is hollowed and omission of the top of the resist pattern are less likely to occur, and a line width of an intermediate portion (central portion) and a deepest portion (bottom portion) in the depth direction of the cross section of the resist pattern is less likely to be larger than a line width of the surface portion (that is, linearity in the depth direction of the resist pattern contour is favorable), and which has excellent insulation reliability and crack resistance reliability, and a dry film using the same, a printed wiring board, and a printed wiring board manufacturing method. The photosensitive resin composition includes an acid-modified vinyl group-containing epoxy resin (A), a photopolymerization initiator (B), a photopolymerization sensitizer including a benzophenone compound (C), and a photopolymerizable compound (D).

A photosensitive resin composition comprising (A) a polyimide precursor having a polymerizable unsaturated bond; (B) a polymerizable monomer having an aliphatic cyclic skeleton; (C) a photopolymerization initiator; and (D) a solvent.

The present disclosure relates to a photoresist composition, a method for preparing the same, and a patterning method. The photoresist composition includes: 1 wt % to 10 wt % of a photosensitizer; 10 wt % to 20 wt % of a phenolic resin; 0.1 wt % to 5.5 wt % of an additive; and 75 wt % to 88 wt % of a solvent, based on the total weight of the photoresist composition, in which the photosensitizer includes: 20 wt % to 70 wt % of a first photosensitive compound represented by formula (1), 20 wt % to 70 wt % of a second photosensitive compound represented by formula (2), and 1 wt % to 35 wt % of a third photosensitive compound represented by formula (3), based on the total weight of the photosensitizer. The photoresist composition of the present disclosure simultaneously guarantees high resolution and high sensitivity, and can meet actual production requirements.

The present invention relates to photosensitive compositions containing polynorbornene (PNB) polymers and certain additives that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs and certain multifunctional crosslinking agents, and two or more phenolic compounds which are resistant to thermo-oxidative chain degradation and exhibit improved mechanical properties.

The present invention provides an alkali-soluble resin with which a cured film having high extensibility, reduced stress, high adhesion to a metal, and high heat resistance can be obtained, and a photosensitive resin composition containing the alkali-soluble resin, and the present invention is an alkali-soluble resin (A) including a structure represented by a general formula (1) wherein X.sup.1 represents a divalent organic group having 2 to 100 carbon atoms, Y.sup.1 and Y.sup.2 each represent a divalent to hexavalent organic group having 2 to 100 carbon atoms, X.sup.2 represents a tetravalent organic group having 2 to 100 carbon atoms, p and q each represent an integer in a range of 0 to 4, and n.sup.1 and n.sup.2 each represent an integer in a range of 5 to 100,000, wherein (I) and (II) described below are satisfied: (I) an organic group having an aliphatic chain having 8 to 30 carbon atoms is contained as X.sup.1 of the general formula (1) at a content of 30 to 70 mol % based on 100 mol % of a total of X.sup.1 and X.sup.2, and (II) an organic group having a diphenyl ether structure is contained as Y.sup.1 of the general formula (1) at a content of 1 to 30 mol % based on 100 mol % of a total of Y.sup.1 and Y.sup.2.

Provided is a photosensitive composition including a pigment, a compound which is represented by Formula (1) (A.sup.1-L.sup.1-Z.sup.1) and has 3000 L.Math.mol.sup.1.Math.cm.sup.1 or less of a maximum value of a molar light absorption coefficient in a wavelength range of 400 to 700 nm, a polymerizable compound, and an oxime-based photopolymerization initiator. In Formula (1), A.sup.1 represents a group including an aromatic ring, L.sup.1 represents a single bond or a divalent linking group, and Z.sup.1 represents a group represented by Formula (Z1).

##STR00001##

A method according to the present disclosure includes providing a substrate, depositing an underlayer over the substrate, depositing a photoresist layer over the underlayer, exposing a portion of the photoresist layer and a portion of the underlayer to a radiation source according to a pattern, baking the photoresist layer and underlayer, and developing the exposed portion of the photoresist layer to transfer the pattern to the photoresist layer. The underlayer includes a polymer backbone, a polarity switchable group, a cross-linkable group bonded to the polymer backbone, and photoacid generator. The polarity switchable group includes a first end group bonded to the polymer backbone, a second end group including fluorine, and an acid labile group bonded between the first end group and the second end group. The exposing decomposes the photoacid generator to generate an acidity moiety that detaches the second end group from the polymer backbone during the baking.