Patent classifications
G03F7/09
SUBSTRATE SURFACE MODIFICATION WITH HIGH EUV ABSORBERS FOR HIGH PERFORMANCE EUV PHOTORESISTS
The present disclosure relates to a patterning structure having a radiation-absorbing layer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the radiation-absorbing layer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.
Lithographic printing plate precursor
A lithographic printing plate precursor including a photopolymerisable coating and an overcoat layer provided on top of said layer, characterized in that the overcoat layer includes a compound comprising at least one moiety having a structure according to Formula (I): (I). ##STR00001##
Lithographic printing plate precursor, method of producing same, lithographic printing plate precursor laminate, plate-making method for lithographic printing plate, and lithographic printing method
A lithographic printing plate precursor including a hydrophilized aluminum support, and a water-soluble or water-dispersible negative type image recording layer provided on the aluminum support, in which an arithmetic average height Sa of a surface of an outermost layer on a side where the image recording layer is provided is in a range of 0.3 μm to 20 μm; a method of producing a lithographic printing plate precursor; a lithographic printing plate precursor laminate formed of the lithographic printing plate precursor; a plate-making method for a lithographic printing plate; and a lithographic printing method.
Lithographic printing plate precursor, method of producing same, lithographic printing plate precursor laminate, plate-making method for lithographic printing plate, and lithographic printing method
A lithographic printing plate precursor including a hydrophilized aluminum support, and a water-soluble or water-dispersible negative type image recording layer provided on the aluminum support, in which an arithmetic average height Sa of a surface of an outermost layer on a side where the image recording layer is provided is in a range of 0.3 μm to 20 μm; a method of producing a lithographic printing plate precursor; a lithographic printing plate precursor laminate formed of the lithographic printing plate precursor; a plate-making method for a lithographic printing plate; and a lithographic printing method.
Underlying coating compositions for use with photoresists
New composition and methods are provided that include antireflective compositions that can exhibit enhanced etch rates in standard plasma etchants. Preferred antireflective coating compositions of the invention have decreased carbon content relative to prior compositions.
Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film
An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound. A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, ##STR00001## noting that in the general formula (1B), when W.sub.1 represents ##STR00002## R.sub.1 does not represent any of ##STR00003##
IMAGE SENSOR DEVICE AND MANUFACTURING METHOD THEREOF
A method includes performing a first lithography process using a first pattern of a first photomask to form a first photoresist pattern on a front side of a device substrate; performing a first implantation process using the first pattern as a mask to form first isolation regions in the device substrate; after performing the first implantation process, performing a second lithography process using a second pattern of a second photomask to form a second photoresist pattern on the front side of the device substrate, the second pattern being shifted from the first pattern by a distance less than the first pitch and in the first direction; performing a second implantation process using the second photoresist pattern as a mask to form second isolation regions in the device substrate and spaced apart from the first isolation regions; and forming pixels between the first and second isolation regions.
Organic bottom antireflective coating composition for nanolithography
An anti-reflective coating composition is provided. The anti-reflective coating composition of the present invention can be useful in preventing a pull-back phenomenon in which an anti-reflective coating layer tears on a corner of a pattern of a substrate during a heat curing process and improving gap-filling performance of the pattern since a crosslinker is attached to a polymer in the composition and the content of the low-molecular-weight crosslinker in the composition is minimized to regulate a heat curing initiation temperature.
Resist underlayer composition, and method of forming patterns using the composition
A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer that includes a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, ##STR00001##
Structure for a quantum dot barrier rib and process for preparing the same
The present invention relates to a structure for a quantum dot barrier rib and a process for preparing the same. The structure for a quantum dot barrier rib of the present invention comprises a cured film having a uniform film thickness and an appropriate range of film thickness. Here, the reflectance R.sub.SCI measured by the SCI (specular component included) method and the reflectance R.sub.SCE measured by the SCE (specular component excluded) method are reduced, and the ratio between them (R.sub.SCE/R.sub.SCI) is appropriately adjusted, so that it is possible to satisfy such characteristics as high light-shielding property and low reflectance at the same time while the resolution and pattern characteristics are maintained to be excellent. In addition, when the structure for a quantum dot barrier rib is prepared, it is possible to form a multilayer pattern having a uniform film thickness suitable for the quantum dot barrier ribs in a single development process. Thus, it can be advantageously used for a quantum dot display.