Patent classifications
G03F7/09
SAMPLE SUPPORT
A sample support includes: a substrate having a plurality of through-holes opening on a first surface and on a second surface; a first member having a plurality of first openings and disposed on the first surface; a second member having a plurality of second openings and disposed on the second surface, and; a bonding member disposed between the first member and the second member; and a conductive layer integrally provided on a region of the second surface corresponding to each of the plurality of second openings. The plurality of through-holes include a plurality of first through-holes located between each of the plurality of first openings and each of the plurality of second openings, and a plurality of second through-holes located between the first member and the second member. Each of the plurality of second openings communicate with each of the plurality of first openings through the plurality of first through-holes.
SEMICONDUCTOR STRUCTURE, METHOD FOR MANUFACTURING SAME AND MEMORY
A semiconductor structure, a method for manufacturing the same and a memory are provided. The semiconductor structure at least includes two photolithography layers which are arranged in sequence and at least one blocking layer. Each photolithography layer includes a functional pattern and an overlay mark, and the photolithography layers include a first photolithography layer and a second photolithography layer. The first photolithography layer includes a first functional pattern and a first overlay mark, and the second photolithography layer includes a second functional pattern and a second overlay mark; and at least one blocking layer. The blocking layer is located between the first functional pattern and the second functional pattern, and a vertical distance between the first functional pattern and the second functional pattern is greater than a vertical distance between the first and second overlay marks, in a stacking direction of the photolithography layers.
GRAY-TONE RESISTS AND PROCESSES
Disclosed herein are techniques for fabricating a straight or slanted surface-relief grating with a uniform or non-uniform grating depth. According to certain embodiments, a gray-tone photoresist includes a novolac resin, a diazonaphthoquinone (DNQ) dissolution inhibitor, and one or more crosslinking agents for crosslinking the novolac resin at an elevated temperature to increase a glass transition temperature of the gray-tone photoresist and/or lower an etch rate of the gray-tone photoresist. After gray-tone photo exposure and development, the gray-tone photoresist is baked at the elevated temperature to crosslink. The crosslinked gray-tone photoresist has a higher density and a higher glass transition temperature, and thus would not become flowable to cause ripples or other surface roughness during the etching.
Chemically amplified photosensitive composition, photosensitive dry film, method of manufacturing patterned resist film, method of manufacturing substrate with template, method of manufacturing plated article, and compound
A chemically amplified photosensitive composition which forms a resist pattern whose cross-sectional shape is rectangular, and which has a wide depth of focus margin; a photosensitive dry film having a photosensitive layer made from the composition; a method of manufacturing a patterned-resist film using the composition; a method of manufacturing a substrate with a template using the composition; a method of manufacturing a plated article using the substrate with a template; and a novel compound. An acid diffusion suppressing agent having a specific structure is blended into the composition including an acid generator which generates acid upon exposure to an irradiated active ray or radiation.
Chemically amplified photosensitive composition, photosensitive dry film, method of manufacturing patterned resist film, method of manufacturing substrate with template, method of manufacturing plated article, and compound
A chemically amplified photosensitive composition which forms a resist pattern whose cross-sectional shape is rectangular, and which has a wide depth of focus margin; a photosensitive dry film having a photosensitive layer made from the composition; a method of manufacturing a patterned-resist film using the composition; a method of manufacturing a substrate with a template using the composition; a method of manufacturing a plated article using the substrate with a template; and a novel compound. An acid diffusion suppressing agent having a specific structure is blended into the composition including an acid generator which generates acid upon exposure to an irradiated active ray or radiation.
Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and polymer
A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; W.sub.1 represents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W.sub.1; and W.sub.2 represents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer. ##STR00001##
PREPOLYMER COMPOSITION INTENDED TO FORM A CONTRAST LAYER AND METHOD FOR STRUCTURING AN INTERFACE MATERIAL
The invention relates to a crosslinkable prepolymer composition for use as a contrast layer. It also relates to a method for structuring an interface material. This method is characterized in particular by the following steps:
depositing, on a block copolymer film, a prepolymer composition layer comprising a plurality of functional monomers and at least one crosslinkable functional group within its polymer chain and, on the other hand, two chemically different crosslinking agents, each agent being capable of initiating the crosslinking of said prepolymer in response to a stimulation specific thereto,
subjecting the stack to a first stimulation localized on first areas, so as to cause a crosslinking reaction of the molecular chains of said prepolymer, and subjecting the stack to a second stimulation, so as to cause crosslinking of the molecular chains of said prepolymer by the action of said second crosslinking agent in secondary areas.
ON-PRESS DEVELOPMENT TYPE LITHOGRAPHIC PRINTING PLATE PRECURSOR, METHOD OF PREPARING LITHOGRAPHIC PRINTING PLATE, AND LITHOGRAPHIC PRINTING METHOD
Provided are an on-press development type lithographic printing plate precursor having a support and an image-recording layer on the support in which the image-recording layer contains a coloring compound capable of having a coloring reaction with a decomposition product generated by exposure of the image-recording layer, and an on-press development type lithographic printing plate precursor having a support and an image-recording layer on the support in which the image-recording layer contains a compound represented by Formula 1C or Formula 2C and an electron-donating polymerization initiator. In Formula 1C and Formula 2C, R.sup.1C to R.sup.4C each independently represent a monovalent organic group, L.sup.1C and L.sup.2C each independently represent a divalent organic group, A.sup.C represents OH or NR.sup.5CR.sup.6C, and R.sup.5C and R.sup.6C each independently represent a monovalent organic group.
##STR00001##
ON-PRESS DEVELOPMENT TYPE LITHOGRAPHIC PRINTING PLATE PRECURSOR, METHOD OF PREPARING LITHOGRAPHIC PRINTING PLATE, AND LITHOGRAPHIC PRINTING METHOD
Provided are an on-press development type lithographic printing plate precursor having a support and an image-recording layer on the support in which the image-recording layer contains a coloring compound capable of having a coloring reaction with a decomposition product generated by exposure of the image-recording layer, and an on-press development type lithographic printing plate precursor having a support and an image-recording layer on the support in which the image-recording layer contains a compound represented by Formula 1C or Formula 2C and an electron-donating polymerization initiator. In Formula 1C and Formula 2C, R.sup.1C to R.sup.4C each independently represent a monovalent organic group, L.sup.1C and L.sup.2C each independently represent a divalent organic group, A.sup.C represents OH or NR.sup.5CR.sup.6C, and R.sup.5C and R.sup.6C each independently represent a monovalent organic group.
##STR00001##
LITHOGRAPHIC PRINTING PLATE PRECURSOR, METHOD OF PRODUCING LITHOGRAPHIC PRINTING PLATE, AND PRINTING METHOD
An object of the present invention is to provide a lithographic printing plate precursor which has excellent on-press developability and is capable of suppressing generation of slip stains and from which a lithographic printing plate with satisfactory printing durability is obtained, and a method of producing a lithographic printing plate and a printing method using the lithographic printing plate precursor. The lithographic printing plate precursor of the present invention is a lithographic printing plate precursor including an aluminum support, and an image recording layer, in which the aluminum support includes an aluminum plate and an anodized aluminum film disposed on the aluminum plate, the anodized film is positioned on a side of the image recording layer with respect to the aluminum plate, the anodized film has micropores extending from a surface of the anodized film on the side of the image recording layer in a depth direction, the micropores have an opening ratio of 20% to 70%, a steepness a45 on the surface of the anodized film on the side of the image recording layer is in a range of 3% to 25%, and an arithmetic average roughness Ra on the surface of the anodized film on the side of the image recording layer is in a range of 0.25 to 0.60 μm.