A continuous flow projection lithography system to form microstructures using an optical array incorporated in a continuous coating process is provided. A mask is placed at a distance from the array. Each element of the array projects one image of the mask onto a substrate, effectively forming an array thereon. A coating process allows flows that can be used to define functional regions of particles or supporting layers that prevent adhesion of crosslinked polymers to surfaces.

A method for forming a nanostructure array and a field effect transistor device on a substrate are provided. The method for forming the nanostructure array includes: providing a template solution comprising template nanostructures; depositing at least one template nanostructure onto the substrate by contacting the template solution with the substrate; and forming on the substrate at least one fixation structure each intersecting with all or a portion of the at least one template nanostructure to fix all or a portion of the at least one template nanostructure on the substrate.

The present disclosure is generally related to semiconductor devices, and more particularly to a dielectric material formed in semiconductor devices. The present disclosure provides methods for forming a dielectric material layer by a cyclic spin-on coating process. In an embodiment, a method of forming a dielectric material on a substrate includes spin-coating a first portion of a dielectric material on a substrate, curing the first portion of the dielectric material on the substrate, spin-coating a second portion of the dielectric material on the substrate, and thermal annealing the dielectric material to form an annealed dielectric material on the substrate.

Substrate processing apparatuses and methods of manufacturing a semiconductor device using the same may be provided. A substrate processing apparatus includes a heater in a support plate and comprising a first unit configured to heat a first portion of a substrate and a second unit configured to heat a second portion of a substrate, and processing circuitry configured to heat the heater in a transient section such that the first unit heats the first portion of the substrate to a first heating temperature, and the second unit heats the second portion of the substrate to a second heating temperature different from the first heating temperature, the transient section being a section before a temperature of the substrate reaches a steady state, a steady section being a section after the temperature of the substrate reaches the steady state.

The composition contains a compound and a solvent. The compound includes a group represented by formula (1). The compound has a molecular weight of no less than 200 and has a percentage content of carbon atoms of no less than 40% by mass. In the formula (1), R.sup.1 and R.sup.2 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms, or R.sup.1 and R.sup.2 taken together represent a part of an alicyclic structure having 3 to 20 ring atoms constituted together with the carbon atom to which R.sup.1 and R.sup.2 bond; Ar.sup.1 represents a group obtained by removing (n+3) hydrogen atoms from an arene or heteroarene having 6 to 20 ring atoms; and X represents an oxygen atom, —CR.sup.3R.sup.4—, —CR.sup.3R.sup.4—O— or —O—CR.sup.3R.sup.4—. ##STR00001##

Provided is a resin capable of producing a photosensitive resin composition having high sensitivity and heat resistance. Disclosed is a resin having a structure represented by general formula (1) or (2) as a main component, wherein R.sup.2 has an organic group represented by general formula (3) and an organic group represented by general formula (4).

A method for critical dimension control in which a substrate is received having an underlying layer and a radiation-sensitive material layer thereon. The radiation-sensitive material is exposed through a patterned mask to a first wavelength of light in the UV spectrum, and developed a first time. The radiation-sensitive material is flood exposed to a second wavelength of light different from the first wavelength of light and developed a second time to form a pattern. Prior to flood exposure, the radiation-sensitive material has a first light wavelength activation threshold that controls generation of acid to a first acid concentration in the radiation-sensitive material layer and controls generation of photosensitizer molecules in the radiation-sensitive material layer, and a second light wavelength activation threshold different than the first light wavelength activation threshold that can excite the photosensitizer molecules resulting in the acid comprising a second acid concentration greater than the first acid concentration.

The invention relates to polysulfonamide compositions for use as redistribution layers as used in the manufacture of semiconductors and semiconductor packages. More specifically it relates to photoimageable polysulfonamide composition for redistribution applications. The invention also relates to the use of the compositions in semiconductor manufacture.

A process for producing a photoresist pattern comprising steps (1) to (5); (1) applying a photoresist composition onto a substrate, said photoresist composition comprising an acid generator and a resin which comprises a structural unit having an acid-liable group; (2) drying the applied composition to form a composition layer; (3) exposing the composition layer; (4) heating the exposed composition layer; and (5) developing the heated composition layer with a developer which comprises butyl acetate, wherein a distance of Hansen solubility parameters between the resin and butyl acetate is from 3.3 to 4.3, the distance is calculated from formula (1):

R=(4×(δd.sub.R−15.8).sup.2+(δp.sub.R−3.7).sup.2+(δh.sub.R−6.3).sup.2).sub.1/2   (1) in which δd.sub.R represents a dispersion parameter of the resin, δp.sub.R represents a polarity parameter of the resin, δh.sub.R represents a hydrogen bonding parameter of the resin, and R represents the distance, and a film retention ratio of the photoresist pattern relative to the composition layer is adjusted to 65% or more.

A photoresist composition comprising an acid generator and a resin which comprises one or more structural units (a1) derived from a monomer (a1) having an acid-liable group, all of monomers (a1) showing a distance of Hansen solubility parameters between the monomer (a1) and butyl acetate in the range of 3 to 5, the distance being calculated from formula (1):

R=(4×(δd.sub.m−15.8).sup.2+(δp.sub.m−3.7).sup.2+(δh.sub.m−6.3).sup.2).sup.1/2  (1)

in which δd.sub.m represents a dispersion parameter of a monomer, δp.sub.m represents a polarity parameter of a monomer, δh.sub.m represents a hydrogen bonding parameter of a monomer, and R represents a distance of Hansen solubility parameters, and at least one of the monomers (a1) showing a difference of R between the monomer (a1) and a compound in which an acid is removed from the monomer (a1) in the range of not less than 5.