G03F7/165

BLOCK COPOLYMER

The present application relates to a block copolymer and its use. The present application can provides a block copolymer that has an excellent self assembling property or phase separation property and therefore can be used in various applications and its use.

SUBSTRATE TREATING COMPOSITION AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME

Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.


X—Si(R1).sub.2(R2)   [Formula 1]


Y—Si(R3).sub.3   [Formula 7]

METHODS AND APPARATUSES FOR DIRECTED SELF-ASSEMBLY
20170307976 · 2017-10-26 ·

Provided herein is a method, including creating a first layer over a substrate, wherein the first layer is configured for directed self-assembly of a block copolymer thereover; creating a continuous second layer over the first layer by directed self-assembly of a block copolymer, wherein the second layer is also configured for directed self-assembly of a block copolymer thereover; and creating a third layer over the continuous second layer by directed self-assembly of a block copolymer. Also provided is an apparatus, comprising a continuous first layer comprising a thin film of a first, phase-separated block copolymer, wherein the first layer comprises a first chemoepitaxial template configured for directed self-assembly of a block copolymer thereon; and a second layer on the first layer, wherein the second layer comprises a thin film of a second, phase-separated block copolymer.

BLOCK COPOLYMER

The present application relates to a block copolymer and its use. The present application can provides a block copolymer that has an excellent self assembling property or phase separation property and therefore can be used in various applications and its use.

BLOCK COPOLYMER

The present application relates to a block copolymer and uses thereof. The present application can provide a block copolymer—which exhibits an excellent self-assembling property and thus can be used effectively in a variety of applications—and uses thereof.

BLOCK COPOLYMER

The present application relates to a block copolymer and uses thereof. The present application can provide a block copolymer—which exhibits an excellent self-assembling property and thus can be used effectively in a variety of applications—and uses thereof.

Composition for pattern formation, pattern-forming method, and block copolymer

A pattern-forming method includes forming on one face side of a substrate, a directed self-assembling film, and removing a part of the directed self-assembling film. The directed self-assembling film is formed from a composition including a block copolymer and a solvent. The block copolymer includes a first block composed of a first repeating unit that includes a silicon atom, a second block composed of a second repeating unit that does not include a silicon atom, and a first group that bonds to at least one end of a main chain and links to the first block. The first group is a monovalent group that forms a compound having ClogP of no less than 2.4 provided that a methyl group is bonded to an atom on a side of the main chain. The first group does not comprise a hetero atom.

Spin-on layer for directed self assembly with tunable neutrality
09733566 · 2017-08-15 · ·

Techniques disclosed herein include methods for creating a directed self-assembly tunable neutral layer that works with multiple different block copolymer materials. Techniques herein can include depositing a neutral layer and then post-processing this neutral layer to tune its characteristics so that the neutral layer is compatible with a particular block copolymer scheme or schemes. Post-processing herein of such a neutral layer can modify a ratio of pi and sigma bonds in a given carbon film or other film to approximate a given self-assembly film that will be deposited on this neutral layer. Accordingly, a generic or single material can be used for a neutral layer and modified to match a given block copolymer to be deposited.

BLOCK COPOLYMER

The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, can be provided with a variety of required functions without constraint and, especially, etching selectivity can be secured, making the block copolymer effectively applicable to such uses as pattern formation.

BLOCK COPOLYMER

The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, can be provided with a variety of required functions without constraint and, especially, etching selectivity can be secured, making the block copolymer effectively applicable to such uses as pattern formation.