The present disclosure relates to the technical field of semiconductors, and provides a method of processing a photoresist layer, and a photoresist layer. The method of processing a photoresist layer includes: forming a photoresist layer on a target layer, where the photoresist layer includes a first part away from the target layer and a second part close to the target layer; processing the photoresist layer by using a first process, such that a light absorption rate of the first part is less than a light absorption rate of the second part; performing first exposure processing on the photoresist layer to form an exposure image in the second part; and stripping the first part and performing first development processing on the photoresist layer, to pattern the second part into a photoresist pattern.

Fluorinated photoinitiators and polymerizable compositions including such fluorinated photoinitiators and at least one free-radically polymerizable monomer, oligomer, or mixture thereof. Multilayer films including a substrate and at least a first layer overlaying a surface of the substrate also are described, in which the at least first layer includes a (co)polymer obtained by polymerizing the foregoing polymerizable compositions. Processes for making a multilayer film using the polymerizable composition also are taught. Articles including the multilayer film also are disclosed, in which the article preferably is selected from a photovoltaic device, a display evice, a solid-state lighting device, a sensor, a medical or biological diagnostic device, an electrochromic device, light control device, or a combination thereof.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Systems and techniques for dry deposition of extreme ultra-violet-sensitive (EUV-sensitive) photoresist layers are discussed. In some such systems, a processing chamber may be provided that features a multi-plenum showerhead that is configured to receive a vaporized organometallic precursor in one plenum and a vaporized counter-reactant thereof in another plenum. The two vaporized reactants may be delivered to a reaction space within the processing chamber and over a wafer support that supports the substrate.

This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Embodiments disclosed herein include methods of depositing a positive tone photoresist using dry deposition and oxidation treatment processes. In an example, a method for forming a photoresist layer over a substrate in a vacuum chamber includes providing a metal precursor vapor into the vacuum chamber. The method further includes providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of a positive tone photoresist layer on a surface of the substrate. The positive tone photoresist layer is a metal-oxo containing material. The method further includes performing a post anneal process of the metal-oxo containing material in an oxygen-containing environment.

Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Imaging layers on the surface of a substrate may be patterned using next generation lithographic techniques, and the resulting patterned film may be used as a lithographic mask, for example, for production of a semiconductor device.

Methods and apparatuses for modifying a wafer surface using an organosilicon precursor are provided herein. The wafer surface is dosed with the organosilicon precursor following deposition of a dielectric material by an atomic layer deposition (ALD) process. In some implementations, the dielectric layer is made of silicon oxide. Dosing the wafer surface with the organosilicon precursor may occur in the same chamber as the ALD process. The organosilicon precursor may modify the wafer surface to increase its hydrophobicity so that photoresist adhesion is improved on the wafer surface. In some implementations, the wafer surface may be exposed to an inert gas RF plasma after dosing the wafer surface with the organosilicon precursor.