The present disclosure relates to a film formed with an organotin(II) compound, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation

The present disclosure relates to use of a metal chelator to treat an exposed photoresist film. In particular embodiments, the metal chelator is employed to remove an interfacial area that is disposed between exposed and unexposed areas or disposed within an exposed area, thereby enhancing patterning quality.

The present disclosure relates to a film formed with a precursor and an organic co-reactant, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the carbon content within the film can be tuned by decoupling the sources of the radiation-sensitive metal elements and the radiation-sensitive organic moieties during deposition. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.

Embodiments of the present disclosure generally relate to methods for providing real-time characterization of photoresist properties. In some embodiments, a method of preparing a patterned photoresist on a substrate includes forming an unpatterned photoresist on the substrate, exposing the unpatterned photoresist to a first dose of EM radiation at a first location on the unpatterned photoresist with a first light source, and measuring an optical property of the unpatterned photoresist and exposing the unpatterned photoresist to a second dose of EM radiation at the first location on the unpatterned photoresist to create a patterned or partially patterned photoresist. The second dose of EM radiation has a greater wavelength, a greater number of pulses, or a longer exposure period than the first dose of EM radiation with a second light source. Also, at least one of the first light source and the second light source is an on-board metrology device.

A mask, a mask assembly, and a method of fabricating a mask are disclosed herein. The mask comprises a polymer film in which at least one cell region and at least one peripheral region are defined, the at least one peripheral region surrounding the at least one cell region, a conductive layer disposed on the polymer film and including a metal, an inorganic layer disposed between the polymer film and the conductive layer and including a silicon-based inorganic material, and holes that penetrate the polymer film, the conductive layer, and the inorganic layer and overlap the at least one cell region in a plan view.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.

A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.

Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.