A method for processing a substrate is described. The method includes forming a metal containing resist layer onto a substrate, patterning the metal containing resist layer, and performing a post exposure bake on the metal containing resist layer. The post exposure bake on the metal containing resist layer is a field guided post exposure bake operation and includes the use of an electric field to guide the ions or charged species within the metal containing resist layer. The field guided post exposure bake operation may be paired with a post development field guided bake operation.

The present invention provides a method of treating a substrate, the method including: performing a first heating process of heat-treating the substrate formed with a film, and a second heating process of heat-treating the substrate after the first heating process is performed; a collection operation of collecting temperature data of a first heating plate which heats the substrate in the first heating process; and a first control operation of adjusting a temperature of a second heating plate which heats the substrate in the second heating process based on the temperature data.

A composition includes two or more near infrared absorbing compounds having an absorption maximum in a wavelength range of 650 to 1000 nm and having a solubility of 0.1 mass % or lower in water at 23° C., in which the two or more near infrared absorbing compounds include a first near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm, and a second near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm which is shorter than the absorption maximum of the first near infrared absorbing compound, and a difference between the absorption maximum of the first near infrared absorbing compound and the absorption maximum of the second near infrared absorbing compound is 1 to 150 nm.

The present invention relates to a composition comprises at least one random copolymer having at least one repeat unit of structure (1), The present invention also relates to novel processes for forming patterns using this novel crosslinked layer on a substrate by enable a film of a block copolymer coated on the novel crosslinked layer to undergo self-assembly. ##STR00001##

A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a substrate and a cathode arranged on the substrate; an electron transport layer arranged on one side of the cathode, away from the substrate, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement.

A method of processing a substrate that includes: forming, over the substrate placed in a process chamber, an extreme ultraviolet (EUV)-active photoresist film including a tin alkenoxide moiety by exposing the substrate to a tin-containing precursor and exposing the substrate to an oxygen-containing precursor that reacts with the tin from the tin-containing precursor to form the tin alkenoxide; and patterning the EUV-active photoresist film by exposing the substrate to an EUV irradiation.

A photolithography method includes dispensing a first liquid onto a first target layer formed over a first wafer through a nozzle at a first distance from the first target layer; capturing an image of the first liquid on the first target layer; patterning the first target layer after capturing the image of the first liquid; comparing the captured image of the first liquid to a first reference image to generate a first comparison result; responsive to the first comparison result, positioning the nozzle and a second wafer such that the nozzle is at a second distance from a second target layer on the second wafer; dispensing a second liquid onto the second target layer formed over the second wafer through the nozzle at the second distance from the second target layer; and patterning the second target layer after dispensing the second liquid.

A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.

It is an object of the present invention to form a resist film that is highly sensitive and enables high-resolution patterning. The present invention relates to a resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101). In the formula (101), R.sup.1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R.sup.1 may be the same or different. R.sup.11 represents a hydrogen atom or an alkyl group optionally having a substituent. R.sup.2 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y.sup.1 represents a single bond or a linking group.

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[Object] To provide a negative type photosensitive composition developable with a low concentration alkali developer and capable of forming a cured film excellent in transparency, in chemical resistance and in environmental durability; and further to provide a pattern-formation method employing the composition. [Means] The present invention provides a negative type photosensitive composition comprising: (I) an alkali-soluble resin, namely, a polymer comprising a carboxyl-containing polymerization unit and an alkoxysilyl-containing polymerization unit, (II) a polysiloxane, (III) a compound having two or more (meth)acryloyloxy groups, (IV) (i) a silicone derivative having a particular structure and/or (ii) a compound having two or more epoxy groups, (V) a polymerization initiator, and (VI) a solvent.