A quantum dot-polymer composite film includes: a plurality of quantum dots, wherein a quantum dot of the plurality of quantum dots includes an organic ligand on a surface of a the quantum dot; a cured product of a photopolymerizable monomer including a carbon-carbon unsaturated bond; and a residue including a residue of a high-boiling point solvent, a residue of a polyvalent metal compound, or a combination thereof.

The present invention relates to a resist composition, especially for use in the production of electronic components via electron beam lithography. In addition to the usual base polymeric component (resist polymer), a secondary electron generator is included in resist compositions of the invention in order to promote secondary electron generation. This unique combination of components increases the exposure sensitivity of resists in a controlled fashion which facilitates the effective production of high-resolution patterned substrates (and consequential electronic components), but at much higher write speeds.

A chemically-amplified negative resist composition includes: (A) an acid generator containing an onium salt (s) shown by the following formula(e) (A-1) and/or (A-2); and (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2). Thus, the present invention provides: a chemically-amplified negative resist composition which provides a pattern with high sensitivity, low LWR and CDU, and favorable profile; and a resist patterning process using the composition. ##STR00001##

A layered structure including a luminescent layer including a quantum dot polymer composite pattern; an inorganic layer disposed on the luminescent layer, the inorganic layer including a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof; and an organic layer being disposed between the luminescent layer and the inorganic layer, the organic layer including an organic polymer, a method of producing the same, and a liquid crystal display including the same. The quantum dot polymer composite pattern includes a repeating section including a polymer matrix; and a plurality of quantum dots (e.g., dispersed) in the polymer matrix, the repeating unit including a first section configured to emit light of a first light, and wherein the inorganic layer is disposed on at least a portion of a surface of the repeating section.

The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate; performing an infiltration process to introduce a metallic compound into the photoresist to enhance a sensitivity of the photoresist layer to an extreme ultraviolet (EUV) radiation; performing an exposing process to the photoresist layer using the EUV radiation; and performing a developing process to the photoresist layer to form a patterned resist layer.

The present invention relates to a composition comprising i) at least one polythiophene comprising monomer units of structure (Ia) or (Ib)

##STR00001## in which *, X, Z, R, and R.sup.1-R.sup.6 are as defined herein; ii) at least one organic compound carrying one or two inorganic acid group(s), preferably one or two sulfonic acid group(s), one or two sulfuric acid group(s), one or two phosphonic acid group(s) or one or two phosphoric acid group(s), or a salt of said organic compound, wherein the molecular weight of the organic compound or the salt thereof is less than 1,000 g/mol; and iii) at least one organic solvent. A method of preparing such compounds is also provided.

A method of manufacturing a semiconductor device includes forming a dopant layer including a dopant composition over a substrate. A resist layer including a resist composition is formed over the dopant layer. A dopant is diffused from the dopant composition in the dopant layer into the resist layer; and a pattern is formed in the resist layer.

A metal-containing photoresist film may be deposited on a semiconductor substrate using a dry deposition technique. Unintended metal-containing photoresist material may form on internal surfaces of a process chamber during deposition, bevel and backside cleaning, baking, development, or etch operations. An in situ dry chamber clean may be performed to remove the unintended metal-containing photoresist material by exposure to an etch gas. The dry chamber clean may be performed at elevated temperatures without striking a plasma. In some embodiments, the dry chamber clean may include pumping/purging and conditioning operations.

The present invention provides a method for forming a patterned polyimide layer with the use of a positive photoresist composition. The composition comprises a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 Å/s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer.

Embodiments disclosed herein include a method of patterning a metal oxo photoresist. In an embodiment, the method comprises depositing the metal oxo photoresist on a substrate, treating the metal oxo photoresist with a first treatment, exposing the metal oxo photoresist with an EUV exposure to form exposed regions and unexposed regions, treating the exposed metal oxo photoresist with a second treatment, and developing the metal oxo photoresist.