Patent classifications
G03F7/2022
Film structure for electric field guided photoresist patterning process
Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.
NEGATIVE TONE PHOTORESIST FOR EUV LITHOGRAPHY
A negative tone photoresist and method for developing the negative tone photoresist is disclosed. For example, the negative tone photoresist includes a solvent, a dissolution inhibitor, and a polymer. The polymer includes a hydroxyl group. The polymer may be greater than 40 weight per cent of a total weight of the negative tone photoresist.
METHODS AND COMPOSITIONS FOR IMPROVED PATTERNING OF PHOTORESIST
Disclosed methods employ acid generator components in an underlayer. Acid generated by the acid generator components diffuses into an overlying layer, e.g., a photoresist layer, and provides acid which chemically alters the photoresist, e.g., alters the solubility of the photoresist in a developer solution. The acid that diffuses into the overlying photoresist layer increases the concentration and the uniformity of concentration of the acid in lower portions of the photoresist. The regions of increased acid concentration within the photoresist can increase the photoresists solubility in developer solutions, thereby reducing inadequate development of the photoresist. Reducing inadequate development of the photoresist can reduce the amount of photoresist residue or scum that remains after development is complete.
Photolithography method
A photolithography method is provided. The photolithography method includes forming a photoresist layer on a wafer, exposing a portion of the photoresist layer by using an exposure device and a mask, and forming a photoresist pattern by removing a non-exposed portion of the photoresist layer. The mask includes a substrate having a main pattern area and a blocking area outside the main pattern area, a main pattern on the main pattern area of the substrate, and a blocking pattern on the blocking area of the substrate. An external circumference of the blocking pattern extends to the maximum area of the mask that may be illuminated by the exposure device or to the outside of the maximum area of the mask.
SYSTEM AND PROCESS FOR PERSISTENT MARKING OF FLEXO PLATES AND PLATES MARKED THEREWITH
Systems and processes for making a flexo plate, and plates made thereby. Non-printing indicia defined by areas of resence and absence of polymer in the plate floor are readable downstream of the washing or other non-cured-polymer-removal step but do not print in the printing step. The non-printing indicia may define a repeating pattern of alphanumeric characters, non-text graphics, or a combination thereof.
METHOD FOR MANUFACTURING CLICHÉ FOR OFFSET PRINTING, AND CLICHÉ FOR OFFSET PRINTING
The present invention relates to a method for manufacturing a cliché for offset printing and a cliché for offset printing.
Method for Forming Mask Pattern, Thin Film Transistor and Method for Forming the Same, and Display Device
A method for forming a mask pattern is provided, comprising forming a negative photoresist on a substrate; in an environment without oxygen, to performing a first exposure on the negative photoresist by use of a first ordinary mask plate, so that a fully-cured portion of the negative photoresist is exposed to light and a semi-cured portion and a removed portion of the negative photoresist are not exposed to light; in an environment with oxygen, performing a second exposure on the negative photoresist by use of a second ordinary mask plate, so that the semi-cured portion of the negative photoresist is exposed to light and the removed portion of the negative photoresist not exposed to light; removing the uncured negative photoresist and forming the mask pattern.
METHOD OF CUTTING CONDUCTIVE PATTERNS
A method includes: providing a first layout of a first layer over a substrate, the first layer having at least one metal pattern, and generating a second layout by placing a cut mask at a first position relative to the substrate to remove material from a first region of the at least one metal pattern to provide a first metal pattern and placing the cut mask at a second position relative to the first layer over the substrate to remove material from a second region of the at least one metal pattern to provide a second metal pattern.
System and Method of Generating a Set of Illumination Patterns for use in a Photomechanical Shaping System
System and method for generating a set of illumination patterns. Intensity distribution for each pixel in an array of pixels of actinic radiation at a plane of a shaping surface while it is in contact with formable material on a substrate is received. Predicted dosage pattern based on the intensity distribution for each pixel and a set of operational parameters is computed. Set of operational parameters may include sets of: modulation maps; positional shifts of an array of illuminators; duty cycles. Curing dose variation metric based on the predicted dosage pattern is determined. The curing dose variation metric is compared to a threshold. Different sets of operational parameters may be used to create an operational parameters superset. The curing set of operational parameters in the operational parameters superset is selected based on a comparison of the curing dose variation metric to a dose variation threshold.
SCREEN PLATE AND MAUFACTURING METHOD THEREOF
A screen plate and a manufacturing method of the screen plate, provided for solving a problem of glass cement being thicker at the center and thinner at the border during printing glass cement by use of the screen plate in the prior arts and an inclination of burr generated at the borders. In the screen plate, a pattern layer comprises a plurality of openings, each of which comprises at least two sub-openings which have horizontal dimensions gradually decreasing in a vertical direction from a side close to the screen to a side away from the screen, so that a blade can squeeze the glass cement through a region of the screen corresponding to the sub-opening closest to the screen and further squeeze the glass cement through the plurality of the sub-openings having gradually reduced horizontal dimensions, thereby achieving a uniform output amount of the glass cement at the sub-opening farthest from the screen and eliminating the burr at the border of the printed pattern of the glass cement.