An exposure apparatus includes a light source, an illumination optical system, a mask, and a projection optical system. The mask is configured from a plurality of small masks individually formed from small patterns in a plurality of regions into which a pattern to configure one device is divided. The projection optical system is configured in a size corresponding to a size of the small masks and projecting the small patterns in a reduced scale on a substrate. The necessity for a projection optical system for which accuracy against aberration is demanded and a high-price lens is used is eliminated, and it is possible to use a projection optical system configured from a small-sized lens having a small projection area and less liable to be influenced by aberration. Consequently, the exposure apparatus can be provided at a reduced cost.

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

A circular cylinder-shaped mask is used to form an image of a pattern on a substrate via a projection optical system. The mask has a pattern formation surface on which the pattern is formed and that is placed around a predetermined axis, and the mask is able to rotate, with the predetermined axis taken as an axis of rotation, in synchronization with a movement of the substrate in at least a predetermined one-dimensional direction. When a diameter of the mask on the pattern formation surface is taken as D, and a maximum length of the substrate in the one-dimensional direction is taken as L, and a projection ratio of the projection optical system is taken as , and circumference ratio is taken as , then the conditions for D(L)/ are satisfied.