There is provided a method of forming a patterned structure on a substrate. The method includes: forming a resist layer on the substrate, the resist layer being a negative tone resist; exposing a first portion of the resist layer to a focused electron beam to form a modified first portion, the modified first portion defining a boundary of a second portion of the resist layer; performing a plasma treatment on a surface of the resist layer, including on a surface of the second portion of the resist layer to form a modified surface portion of the second portion of the resist layer, resulting in a plasma treated resist layer; and performing development of the plasma treated resist layer to form the patterned structure on the substrate corresponding the second portion of the resist layer.

A method for manufacturing grating reference materials having a self-traceability includes: acquiring a mask substrate including a window region and a non-window region; fabricating, a self-traceability mask on the mask substrate by using a laser-focused atomic deposition technique; acquiring a photoresist sample including an extreme ultraviolet photoresist and a second substrate; exposing the extreme ultraviolet photoresist by combining the self-traceability mask with the soft x-ray interference lithography, and then performing a development process after exposing to obtain a photoresist grating structure; and transferring the photoresist grating structure to the second substrate to obtain the grating reference materials.

Oxime ester compounds of the formula I, II, III, IV or V ##STR00001##
wherein
Z is for example ##STR00002##
Z.sub.1 for is NO.sub.2, unsubstituted or substituted C.sub.7-C.sub.20 aroyl or unsubstituted or substituted C.sub.4-C.sub.20heteroaroyl; provided that at least one Z.sub.1 is other than NO.sub.2; Z.sub.2 is for example unsubstituted or substituted C.sub.7-C.sub.20aroyl; R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5 and R.sub.6 for example are hydrogen, halogen, or unsubstituted or substituted C.sub.1-C.sub.20alkyl, unsubstituted or substituted C.sub.6-C.sub.20aryl, or unsubstituted or substituted C.sub.4-C.sub.20heteroaryl; R.sub.9, R.sub.10, R.sub.11, R.sub.12 and R.sub.13 for example are hydrogen, halogen, OR.sub.16, unsubstituted or substituted C.sub.1-C.sub.20alkyl; provided that R.sub.9 and R.sub.13 are neither hydrogen nor fluorine; R.sub.14 is for example unsubstituted or substituted C.sub.6-C.sub.20aryl or C.sub.3-C.sub.20heteroaryl Q is for example C.sub.6-C.sub.20arylene or C.sub.3-C.sub.20heteroarylene; Q.sub.1 is —C.sub.1-C.sub.20alkylene-CO—; Q.sub.2 is naphthoylene; Q.sub.3 is for example phenylene; L is for example O-alkylene-O—; R.sub.15 is for example hydrogen or C.sub.1-C.sub.20alkyl; R.sub.20 is for example hydrogen, or unsubstituted or substituted C.sub.1-C.sub.20alkyl; are effective photoinitiators.

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

A resist composition including a compound represented by formula (b1) in which R.sup.b1 represents an aryl group which may have a substituent; R.sup.b2 and R.sup.b3 each independently represents an aryl group which may have a substituent or an alkyl group which may have a substituent; provided that at least one of the aryl group represented by R.sup.b1 and the aryl group or the alkyl group represented by R.sup.b2 or R.sup.b3 has a substituent containing a halogen atom, and at least one of the aryl group represented by R.sup.b1 and the aryl group or the alkyl group represented by R.sup.b2 or R.sup.b3 has a substituent containing a sulfonyl group; and X.sup.− represents a counteranion

##STR00001##

A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film. ##STR00001##

Disclosed is a resin including a structural unit represented by formula (a1-5) and a structural unit represented by formula (I), and a resist composition: ##STR00001##
wherein R.sup.a8 represents an alkyl group which may have a halogen atom, a hydrogen atom or a halogen atom; Z.sup.a1 represents a single bond or *—(CH.sub.2).sub.h3—CO-L.sup.54-; h3 represents an integer of 1 to 4; L.sup.51, L.sup.52, L.sup.53 and L.sup.54 each independently represent —O— or —S—; s1 represents an integer of 1 to 3; s1′ represents an integer of 0 to 3; R.sup.1 represents a hydrogen atom or a methyl group; A.sup.1 represents a single bond or *—CO—O—; R.sup.2 represents a halogen atom, a hydroxy group, a haloalkyl group or an alkyl group; mi represents an integer of 1 to 3; and ni represents an integer of 0 to 4, in which mi+ni≤5.

Disclosed are methods of forming a pattern and methods of fabricating a semiconductor device. A method of fabricating a semiconductor device may include providing a substrate comprising a resist layer on the substrate and coating a compound on the resist layer to form a charge dissipation layer. The charge dissipation layer may include a conductive polymer and a metal complex.

The present application relates to a block copolymer and a use thereof. The present application can provide a laminate which is capable of forming a highly aligned block copolymer on a substrate and thus can be effectively applied to production of various patterned substrates, and a method for producing a patterned substrate using the same.

A photoresist composition comprising a resin which comprises a structural unit represented by the formula (I): ##STR00001## and a salt represented by the formula (B1): ##STR00002##